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Use of vanadium oxide in microbolometer sensors

  • US 5,450,053 A
  • Filed: 06/29/1993
  • Issued: 09/12/1995
  • Est. Priority Date: 09/30/1985
  • Status: Expired
First Claim
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1. An infrared radiation detector comprising in combination:

  • a semiconductor body having a depression formed in a first surface of the body;

    a thin film dielectric member attached to the first surface at least at one location and positioned to suspend the dielectric member as a thermally isolated structure over said depression; and

    ,a thin film layer of vanadium oxide embedded in said dielectric member over said depression, said thin film layer having a high temperature coefficient of resistance; and

    , contacts to said thin film layer of vanadium oxide adapted to be connected to a measuring circuit.

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