Bidirectional blocking lateral MOSFET with improved on-resistance

• US 5,451,533 A
• Filed: 10/05/1994
• Issued: 09/19/1995
• Est. Priority Date: 11/30/1993
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Williams, Richard K., Chen, Jun W., Jew, Kevin
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Pham, Long
• Application Number:
  US08/318,323
• Time in Patent Office: 349 Days
• Field of Search: 437/6, 437/45, 437/29, 437/41, 437/44, 437/913, 257/392, 257/402, 257/655, 148/DIG. 126, 148/DIG. 96
• US Class Current: 438/291
• CPC Class Codes: H01L 29/1087 characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: Y10S 148/126 Power FETs

Abstract

A bidirectional current blocking lateral power MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.

Claims

1. A method for reducing the on-resistance of a bidirectional current blocking power MOSFET, the bidirectional current blocking power MOSFET including a semiconductor substrate, the substrate including a body region doped with P-type dopant to a first doping concentration, wherein the body region is grounded and neither a source region nor a drain region of the power MOSFET is grounded, the method comprising:

forming a P-type spitaxial layer having a second doping concentration in the semiconductor substrate, the second doping concentration being lower than the first doping concentration;

introducing N-type dopant into the P-type epitaxial layer to form the source region and the drain region; and

forming a P-type threshold adjust layer having a third doping concentration in the spitaxial layer, the third doping concentration being higher than the second doping concentration.

2. The method of claim 1 wherein the step of forming the P-type threshold adjust layer comprises forming a threshold adjust implant having a fourth doping concentration, and forming a punchthrough implant having a fifth doping concentration, wherein the fourth doping concentration is greater than the fifth doping concentration.

3. The method of claim 2 wherein the step of forming the threshold adjust implant comprises forming the threshold adjust implant to a first depth into the substrate, and the step of forming the punchthrough implant comprises forming the punchthrough implant to a second depth into the substrate, wherein the second depth is greater than the first depth.

4. The method of claim 3 wherein the power MOSFET is activated by a gate drive voltage applied between a gate and one of the source region and the drain region, and wherein the method further comprises the step of depositing an oxide layer on the substrate over the source and drain regions such that the oxide layer is formed to a minimum thickness necessary to support the gate drive voltage.

5. The method of claim 1 comprising the additional step of introducing N-type dopant to a region of the spitaxial layer adjacent the source region to form a first drift region, a concentration of N-type dopant in the first drift region being lower than a concentration of N-type dopant in the source region.

6. The method of claim 5 comprising the additional step of introducing N-type dopant to a region of the spitaxial layer adjacent the drain region to form a second drift region, a concentration of N-type dopant in the second drift region being lower than a concentration of N-type dopant in the drain region.

7. The method of claim 5 wherein the first drift region is formed by implanting N-type dopant at a dosage of from 1×

10¹² to 7×

10¹² cm^-2.

8. The method of claim 5 wherein the source region is formed by implanting N-type dopant at a dosage of from 3.5×

10¹⁵ to 1.0×

10¹⁶ cm^-2.