Electrostatic wafer clamp

• US 5,452,177 A
• Filed: 01/31/1995
• Issued: 09/19/1995
• Est. Priority Date: 06/08/1990
• Status: Expired due to Term

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Associates, Inc.
• Inventors: Frutiger, William A.
• Primary Examiner(s): Shoop, Jr., William M.
• Assistant Examiner(s): Elms, Richard T.
• Application Number:
  US08/383,554
• Time in Patent Office: 231 Days
• Field of Search: 361/230, 361/233, 361/234, 361/235, 204/192.32, 204/, 269/DIG. 903, 279/128, 29/829, 156/643
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

Apparatus for electrostatic clamping of a semiconductor wafer in a vacuum processing chamber wherein an ion beam is applied to the wafer. In a first embodiment, the apparatus includes an electrically conductive platen, a resilient, thermally-conductive dielectric layer affixed to the platen and one or more conductive wires positioned on the clamping surface. A clamping voltage is applied between the wires and the platen to firmly clamp the wafer against the clamping surface and depress the wires into the resilient dielectric layer. In a second embodiment, a three-phase wafer clamping apparatus includes a platen divided into three electrically isolated sections. One phase of a three-phase clamping voltage is connected to each of the platen sections. In the three-phase configuration, the wafer charging current is very small, and the clamping force is essentially constant. In a third embodiment, a six phase wafer clamping apparatus includes a platen having six symmetrically located electrodes. Voltages with six different phases are applied to the electrodes, with the voltages applied to electrodes on opposite sides of the platen being one-half cycle out of phase. The applied voltages are preferably bipolar square waves.

Claims

1. Apparatus for electrostatic clamping of a workpiece, comprising:

a platen having a substantially circular, electrically insulating clamping surface for receiving a workpiece and at least six platen sectors each having a conductive electrode underlying and electrically isolated from said clamping surface said electrodes being configured in pairs symmetrically disposed about a center of said clamping surface, said clamping surface comprising a dielectric material selected to avoid sticking of the workpiece thereto after clamping; and

clamping control means for applying AC voltages to said electrodes when clamping of the workpiece is desired, the workpiece being electrostatically clamped in a fixed position on said clamping surface when said AC voltages are applied to said electrodes, said clamping control means comprising means for generating at least six bipolar square wave voltages having relative phases of 0°

, 60°

, 120°

, 180°

, 240° and

300°

, said square wave voltages defining a first set having phases 0° and

180°

, a second set having phases 60° and

240°

, and a third set having phases 120° and

300°

each of said sets including positive and negative, equal amplitude, bipolar square wave voltages that are one half cycle out of phase, each of said bipolar square wave voltages having a predetermined switching speed selected to limit transients which could potentially damage the workpiece, and means for coupling said sets of square wave voltages to said Symmetrically disposed electrode pairs so as to provide symmetrical clamping of said workpiece to said clamping surface providing reliable high speed clamping with reduced risk of damage to said workpiece.

2. Apparatus as defined in claim 1 wherein said electrodes comprise metal layers underlying said dielectric material.

3. Apparatus as defined in claim 1 wherein said electrodes have equal areas.

4. Apparatus as defined in claim 2 wherein said clamping surface is flat.

5. Apparatus as defined in claim 2 wherein said dielectric material does not exhibit bulk polarization at the frequency and voltage used for clamping of the workpiece.

6. Apparatus as defined in claim 2 wherein said dielectric material is selected from the group consisting of alumina, sapphire and aluminum nitride.

7. Apparatus as defined in claim 2 wherein said dielectric material comprises alumina.

8. Apparatus as defined in claim 2 wherein said dielectric material is thermally conductive.

9. Apparatus as defined in claim 2 wherein said platen further includes an insulating substrate for supporting each of said electrodes and said dielectric material, and a support plate for said insulating substrate.

10. Apparatus as defined in claim 9 wherein said support plate includes a passage for circulation of a cooling fluid.

11. Apparatus as defined in claim 9 wherein said platen further includes a peripheral grounding ring for contacting said workpiece.

12. Apparatus as defined in claim 1 wherein said dielectric material comprises six dielectric insulators, one for each of said electrodes, and said electrodes each comprise a metal layer formed on a lower surface of respective ones of said dielectric insulators.

13. Apparatus as defined in claim 12 wherein said dielectric insulators comprise alumina and said electrodes comprise a molybdenum layer and a thin titanium layer between said molybdenum layer and said dielectric insulator.

14. Apparatus as defined in claim 13 wherein said electrodes are evaporated on the lower surfaces of said dielectric insulators.

15. Apparatus as defined in claim 12 wherein said platen further comprises an insulating substrate for support of said dielectric insulators and said electrodes, and wherein said dielectric insulators, having electrodes formed on lower surfaces thereof, are bonded to said insulating substrate by tetrafluoroethylene fasteners.

16. Apparatus as defined in claim 1 wherein each of said square wave voltages has a fundamental frequency in a range of about 1 Hz to 300 Hz.

17. Apparatus as defined in claim 1 wherein said workpiece comprises a semiconductor wafer.

18. Apparatus as defined in claim 1 wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.

19. Apparatus as defined in claim 1 wherein each of said square wave voltages has a fundamental frequency of about 30 Hz.

20. Apparatus as defined in claim 19 wherein said switching speed is about 3 milliseconds.

21. Apparatus as defined in claim 19 wherein each of said bipolar square wave voltages has a peak amplitude in a range of about 900 volts to 1200 volts.

22. Apparatus as defined in claim 1 further including means for introducing a gas into a region between said workpiece and said clamping surface for conducting thermal energy between said workpiece and said clamping surface when said apparatus is utilized in a vacuum environment.

23. Apparatus as defined in claim 22 further including means for sealing the region between said workpiece and said clamping surface near an outer periphery thereof to prevent escape of said gas from said region.

24. Apparatus as defined in claim 1 further including means for cooling said platen.

25. Apparatus as defined in claim 1 wherein said electrodes comprise sector-shaped electrodes having equal areas, wherein said dielectric material is selected from the group consisting of alumina, sapphire and aluminum nitride, and wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.

26. Apparatus for electrostatic clamping of a workpiece, comprising:

a platen having an electrically insulating clamping surface for receiving a workpiece and 2n conductive electrodes, where n is an integer equal to or greater than three, underlying and electrically isolated from said clamping surface; and

clamping control means for applying AC voltage to said electrodes when clamping of the workpiece is desired, the workpiece being electrostatically clamped in a fixed position on said clamping surface when said AC voltages are applied to said electrodes, said clamping control means comprising means for generating 2n bipolar square wave voltages having equally shifted relative phases, said square wave voltages defining n sets of square wave voltages, each of said sets including positive and negative, bipolar square wave voltages that are one half cycle out of phase, each of said bipolar square wave voltages having a predetermined switching speed selected to limit transients which could potentially damage the workpiece, and means for coupling said sets of square wave voltages to said electrodes so as to provide symmetrical clamping of the workpiece to said clamping surface.

27. Apparatus as defined in claim 26 wherein said clamping surface is defined by dielectric insulators, one for each of said electrodes, and said electrodes each comprise a metal layer formed on a lower surface of respective ones of said dielectric insulators.

28. Apparatus as defined in claim 27 wherein said dielectric insulators are fabricated from a material selected from the group consisting of alumina, sapphire and aluminum nitride.

29. Apparatus as defined in claim 27 wherein said dielectric insulators comprise alumina and said electrodes comprise a molybdenum layer and a thin titanium layer between said molybdenum layer and said dielectric insulator.

30. Apparatus as defined in claim 26 wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.

31. Apparatus as defined in claim 30 wherein each of said bipolar square wave voltages has a peak amplitude in a range of about 900 volts to 1200 volts.

32. Apparatus as defined in claim 26 further including means for introducing a gas into a region between said workpiece and said clamping surface for conducting thermal energy between said workpiece and said clamping surface when said apparatus is utilized in a vacuum environment.

33. Apparatus as defined in claim 32 further including means for sealing the region between said workpiece and said clamping surface near an outer periphery thereof to prevent escape of said gas from said region,

34. Apparatus as defined in claim 26 further including means for cooling said platen.

35. Apparatus as defined in claim 27 wherein said electrodes comprise sector-shaped electrodes having equal areas, wherein said clamping surface comprises a dielectric material selected from the group consisting of alumina, sapphire and aluminum nitride, and wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.

36. Apparatus for electrostatic clamping of a workpiece in a vacuum chamber, comprising:

a platen having a circular, electrically insulating clamping surface for receiving a workpiece, said clamping surface being defined by six dielectric insulators, said platen further including six electrodes underlying said dielectric insulators and an insulating substrate for supporting said electrodes and said dielectric insulators;

clamping control means for applying AC voltages to said electrodes when clamping of the workpiece is desired, the workpiece being electrostatically clamped in a fixed position on said clamping surface when said AC voltages are applied to said electrodes, said clamping control means comprising means for generating six bipolar square wave voltages having relative phases of 0°

, 60°

, 120°

, 180°

, 240° and

300°

, said square wave voltages defining first, second and third sets of square wave voltages, each of said sets including positive and negative, equal amplitude, bipolar square wave voltages that are one half cycle out of phase, each of said bipolar square wave voltages having a predetermined switching speed selected to limit transients which could potentially damage the workpiece, and means for coupling said sets of square wave voltages to said electrodes so as to provide symmetrical clamping of the workpiece to said clamping surface;

means for introducing a gas into a region between said workpiece and said clamping surface for conducting thermal energy between said workpiece and said clamping surface; and

means for cooling said platen.

37. Apparatus as defined in claim 36 wherein said electrodes comprise sector-shaped electrodes having equal areas, wherein said dielectric insulators are fabricated of a material selected from the group consisting of alumina, sapphire and aluminum nitride, and wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.

38. Apparatus for electrostatic clamping of a workpiece, comprising:

a platen having an electrically insulating clamping surface for receiving a workpiece and 2n conductive electrodes, where n is an integer equal to or greater than three, underlying and electrically isolated from said clamping surface; and

clamping control means for applying AC voltages to said electrodes when clamping of the workpiece is desired, the workpiece being electrostatically clamped in a fixed position on said clamping surface when said AC voltages are applied to said electrodes, said clamping control means comprising means for generating six bipolar square wave voltages having relative phases of 0°

, 60°

, 120°

, 180°

, 240° and

300°

, said square wave voltages defining first, second and third sets of square wave voltages, each of said sets including positive and negative, equal amplitude, bipolar square wave voltages that are one-half cycle out of phase, each of said bipolar square wave voltages having a predetermined switching speed selected to limit transients which could potentially damage the workpiece, and means for coupling said sets of square wave voltages to said electrodes so as to provide symmetrical clamping of the workpiece to said clamping surface.

39. Apparatus as defined in claim 38 wherein said electrodes comprise sector-shaped electrodes having equal areas, wherein said clamping surface comprises a dielectric material selected from the group consisting of alumina, sapphire and aluminum nitride, and wherein each of said square wave voltages has a fundamental frequency in a range of about 20 Hz to 50 Hz.