Static semiconductor memory device adapted for stabilization of low-voltage operation and reduction in cell size
First Claim
1. A static type semiconductor memory device including a memory cell comprising:
- a flip-flop having first and second nodes;
a first transfer gate transistor connected between a first bit line of a complementary pair of bit lines and a said first node;
a second transfer gate transistor connected between the second bit line of said complementary pair of bit lines and said second node;
a first capacitor connected between a word line and the gate of said first transfer gate; and
a second capacitor connected between said word line and the gate of said second transfer gate.
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Accused Products
Abstract
In a static type semiconductor memory device having a memory cell, the memory cell includes a flip-flop which has first and second nodes, a first transfer gate transistor which is connected between a first bit line of a pair of complementary bit lines and the first node, a second transfer gate transistor which is connected between a second bit line of the pair of complementary bit lines and the second node, a first capacitor which is connected between a word line and the gate of the first transfer gate, and a second capacitor which is connected between the word line and the gate of the second transfer gate. By the structure, even if the cell ratio is made small, it is possible to achieve stable operation at a low operating voltage and possible, thereby, to achieve both low power consumption and a high degree of integration.
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Citations
12 Claims
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1. A static type semiconductor memory device including a memory cell comprising:
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a flip-flop having first and second nodes; a first transfer gate transistor connected between a first bit line of a complementary pair of bit lines and a said first node; a second transfer gate transistor connected between the second bit line of said complementary pair of bit lines and said second node; a first capacitor connected between a word line and the gate of said first transfer gate; and a second capacitor connected between said word line and the gate of said second transfer gate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A static type semiconductor memory device including a memory cell comprising:
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a first load element and a second load element, one end of each of which is connected to a first power supply line that supplies a high-potential power supply voltage; a first transistor, the drain of which is connected to the other end of said first load element, the source of which is connected to a second power supply line which supplies a low-potential power supply voltage, and the gate of which is connected to the other end said second load element; a second transistor, the drain of which is connected to the other end of said second load element, the source of which is connected to said second power supply line, and the gate of which is connected to the other end of said first load element; a third transistor, the drain of which is connected to a first of a pair of complementary bit lines and the source of which is connected to the other end of said first load element; a fourth transistor, the drain of which is connected to a second of said pair of complementary bit lines and the source of which is connected to the other end of said second load element; a first capacitor, one end of which is connected to a word line and the other end of which is connected to the gate of said third transistor; a second capacitor, one end of which is connected to said word line and the other end of which is connected to the gate of said fourth transistor; a first resistance means, one end of which is connected to the gate of said third transistor and the other end of which is connected to the other end of said first load element; a second resistance means, one end of which is connected to the gate of said fourth transistor and the other end of which is connected to the other end of said second load element; a third capacitor, one end of which is connected to said first bit line and the other end of which is connected to the gate of said third transistor; and a fourth capacitor, one end of which is connected to said second bit line and the other end of which is connected to the gate of said fourth transistor. - View Dependent Claims (9, 10, 11, 12)
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Specification