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Photoelectric conversion device with improved back reflection layer

  • US 5,453,135 A
  • Filed: 12/28/1993
  • Issued: 09/26/1995
  • Est. Priority Date: 12/28/1992
  • Status: Expired due to Term
First Claim
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1. A photovoltaic conversion device comprising at least a metal layer, a transparent conductive layer disposed on said metal layer, and an active semiconductor layer disposed on said transparent conductive layer, characterized in that said transparent conductive layer comprises a layer having an uneven surface which is composed of a zinc oxide material Zn1-x Ox (0<

  • x<

    1) having an X-ray diffraction pattern in which (a) the peak intensity of the (2,0,0) planes of ZnO2 is 1/200 or less of (b) the peak intensity of the (0,0,2) planes of ZnO and (c) the peak intensity of the (1,0,1) planes of Zn is 1/200 or less of the peak intensity (b).

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