Method for making an interconnection structure for integrated circuits
First Claim
1. A method of fabricating a device for making electrical contact with an integrated circuit comprising the steps of:
- (a) depositing a mask layer on a surface of a sacrificial substrate;
(b) etching a pattern of apertures through the mask layer;
(c) etching the sacrificial substrate exposed by the pattern of apertures to form a pattern of wells with tapering side walls;
(d) depositing a layer of conductive material within each of the wells;
(e) depositing a layer of dielectric material over the structure formed in step (d);
(f) etch removing the sacrificial substrate to expose at least a tip portion of the conductive material deposited within each of the wells, thereby forming a pattern of projecting insertion structures.
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Accused Products
Abstract
A device for making temporary or permanent electrical connections to circuit pads of an integrated circuit is made with conventional semiconductor fabrication processes. The device has a supporting substrate from which project a plurality of insertion structures that are in mating alignment with corresponding circuit pads of the integrated circuit. Each insertion structure is metallized to make electrical contact with the corresponding circuit pad. The electrical contacts may be temporary or permanent depending upon the choice of metallization and the pressure applied to the contacting surfaces. The insertion structure devices have particular application for functional testing, electrical burn-in and packaging of an integrated circuit either as a full wafer or as an individual die.
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Citations
25 Claims
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1. A method of fabricating a device for making electrical contact with an integrated circuit comprising the steps of:
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(a) depositing a mask layer on a surface of a sacrificial substrate; (b) etching a pattern of apertures through the mask layer; (c) etching the sacrificial substrate exposed by the pattern of apertures to form a pattern of wells with tapering side walls; (d) depositing a layer of conductive material within each of the wells; (e) depositing a layer of dielectric material over the structure formed in step (d); (f) etch removing the sacrificial substrate to expose at least a tip portion of the conductive material deposited within each of the wells, thereby forming a pattern of projecting insertion structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. The method of clam 16 wherein the dielectric material is deposited to form the mask layer.
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18. A method of fabricating an integrated circuit with integral insertion structures comprising the steps of:
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(a) forming an etch stop layer on a semiconductor substrate; (b) forming a circuit grade semiconductor layer over the etch stop layer; (c) depositing a mask layer on an exposed surface of the circuit grade semiconductor layer; (d) etching a pattern of apertures through the mask layer; (e) etching a pattern of wells with tapering side walls into the semiconductor substrate underlying the pattern of apertures; (f) depositing a layer of conductive material within each of the wells; (g) depositing a layer of dielectric material over the structure formed in step (f); (h) etch removing the semiconductor substrate to the etch stop layer to expose at least a tip portion of the conductive material deposited within each of the wells, thereby forming a pattern of projecting insertion structures; (i) removing the etch stop layer to expose the circuit grade semiconductor layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification