Microelectronic diamond capacitive transducer

• US 5,453,628 A
• Filed: 10/12/1994
• Issued: 09/26/1995
• Est. Priority Date: 10/12/1994
• Status: Expired due to Term

• Current Assignee: Kobe Steel USA, Inc. (Kobe Steel Limited)
• Original Assignee: Kobe Steel USA, Inc. (Kobe Steel Limited)
• Inventors: Sahaida, Scott R., Tessmer, Glenn J., Stoner, Brian R., Hartsell, Michelle L.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/322,064
• Time in Patent Office: 349 Days
• Field of Search: 257/76, 257/77, 257/417, 257/418, 257/419, 257/469, 73/720, 73/721, 73/718, 73/724, 73/727, 338/5
• US Class Current: 257/76
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.

Claims

1. A microelectronic capacitive transducer comprising:

a first electrically conductive layer;

a diaphragm positioned opposite said first electrically conductive layer, said diaphragm comprising a first diamond layer; and

mounting means for mounting said diaphragm so as to be moveable relative to said first electrically conductive layer and defining a cavity therebetween.

2. A microelectronic capacitive transducer according to claim 1 wherein said first diamond layer is degeneratively doped.

3. A microelectronic capacitive transducer according to claim 1 wherein said diaphragm further comprises a second electrically conductive layer on said first diamond layer.

4. A microelectronic capacitive transducer according to claim 1 further comprising an insulating layer on a face of said first diamond layer adjacent said first electrically conductive layer and defining an overpressure stop.

5. A microelectronic capacitive transducer according to claim 4 wherein said insulating layer comprises a second diamond layer.

6. A microelectronic capacitive transducer according to claim 1 further comprising a third diamond layer laterally adjacent said first diamond layer and integrally formed therewith, wherein said third diamond layer is semiconducting, and further comprising signal conditioning means formed in said third semiconducting diamond layer for generating an output signal responsive to movement of said diaphragm relative to said first electrically conductive layer.

7. A microelectronic capacitive transducer according to claim 6 wherein said first and third diamond layers comprise highly oriented diamond.

8. A microelectronic capacitive transducer according to claim 6 wherein said signal conditioning means comprises temperature compensation means for generating an output signal substantially independent of ambient temperature variation.

9. A microelectronic capacitive transducer according to claim 1 wherein said first electrically conductive layer, said diaphragm, and said mounting means define a sealed cavity so that the capacitive transducer operates as an absolute pressure sensor.

10. A microelectronic capacitive transducer according to claim 1 further comprising a substrate positioned on a face of said first electrically conducting layer opposite said diaphragm, and wherein said substrate and said first electrically conductive layer have respective aligned openings extending therethrough to define a vented cavity so that the capacitive transducer operates as a differential pressure sensor.

11. A microelectronic capacitive transducer according to claim 1 wherein said mounting means comprises an insulating layer having an opening therethrough thereby defining sidewalls of the cavity.

12. A microelectronic capacitive transducer comprising:

a first electrically conductive layer;

a diaphragm positioned opposite said first electrically conductive layer, said diaphragm comprising a first diamond layer;

mounting means for mounting said diaphragm so as to be moveable relative to said first electrically conductive layer and defining a cavity therebetween; and

a second diamond layer on a face of said first diamond layer adjacent said first electrically conductive layer thereby defining an overpressure stop.

13. A microelectronic capacitive transducer according to claim 12 wherein said first diamond layer is degeneratively doped.

14. A microelectronic capacitive transducer according to claim 12 wherein said diaphragm further comprises a second electrically conductive layer on said first diamond layer.

15. A microelectronic capacitive transducer according to claim 12 further comprising a third diamond layer laterally adjacent said first diamond layer and integrally formed therewith, wherein said third diamond layer is semiconducting, and further comprising signal conditioning means formed in said third semiconducting diamond layer for generating an output signal responsive to movement of said diaphragm relative to said first electrically conductive layer.

16. A microelectronic capacitive transducer according to claim 15 wherein said first and third diamond layers comprise highly oriented diamond.

17. A microelectronic capacitive transducer according to claim 12 wherein said first electrically conductive layer, said diaphragm, and said mounting means define a sealed cavity so that the capacitive transducer operates as an absolute pressure sensor.

18. A microelectronic capacitive transducer according to claim 12 further comprising a substrate positioned on a face of said first electrically conducting layer opposite said diaphragm, and wherein said substrate and said first electrically conductive layer have respective aligned openings extending therethrough to define a vented cavity so that the capacitive transducer operates as a differential pressure sensor.

19. A microelectronic capacitive transducer comprising:

a first electrically conductive layer;

a diaphragm positioned opposite said first electrically conductive layer, said diaphragm comprising a first highly oriented diamond layer;

mounting means for mounting said diaphragm so as to be moveable relative to said first electrically conductive layer and defining a cavity therebetween;

a second highly oriented diamond layer laterally adjacent said first highly oriented diamond layer and integrally formed therewith; and

signal conditioning means formed in said second highly oriented diamond layer for generating an output signal responsive to movement of said diaphragm relative to said first electrically conductive layer.

20. A microelectronic capacitive transducer according to claim 19 wherein said first highly oriented diamond layer is degeneratively doped.

21. A microelectronic capacitive transducer according to claim 19 wherein said diaphragm further comprises a second electrically conductive layer on said first highly oriented diamond layer.

22. A microelectronic capacitive transducer according to claim 19 further comprising an insulating layer on a face of said first highly oriented diamond layer adjacent said first electrically conductive layer and defining an overpressure stop.

23. A microelectronic capacitive transducer according to claim 22 wherein said insulating layer comprises a third diamond layer.

24. A microelectronic capacitive transducer according to claim 19 wherein said signal conditioning means comprises temperature compensation means for generating an output signal substantially independent of ambient temperature variation.

25. A microelectronic capacitive transducer according to claim 19 wherein said first electrically conductive layer, said diaphragm, and said mounting means define a sealed cavity so that the capacitive transducer operates as an absolute pressure sensor.

26. A microelectronic capacitive transducer according to claim 19 further comprising a substrate positioned on a face of said first electrically conducting layer opposite said diaphragm, and wherein said substrate and said first electrically conductive layer have respective aligned openings extending therethrough to define a vented cavity so that the capacitive transducer operates as a differential pressure sensor.

27. A microelectronic capacitive transducer comprising:

a first electrically conductive layer;

a diaphragm positioned opposite said first electrically conductive layer, said diaphragm comprising a first diamond layer having a dopant concentration of greater than about 10¹⁹ cm^-3 so as to be electrically conducting; and

mounting means for mounting said diaphragm so as to be moveable relative to said first electrically conductive layer and defining a cavity therebetween.

28. A microelectronic capacitive transducer according to claim 27 further comprising an insulating layer on a face of said first diamond layer adjacent said first electrically conductive layer and defining an overpressure stop.

29. A microelectronic capacitive transducer according to claim 28 wherein said insulating layer comprises a second diamond layer.

30. A microelectronic capacitive transducer according to claim 27 further comprising a third diamond layer laterally adjacent said first diamond layer and integrally formed therewith, wherein said third diamond layer is semiconducting, and further comprising signal conditioning means formed in said third semiconducting diamond layer for generating an output signal responsive to movement of said diaphragm relative to said first electrically conductive layer.

31. A microelectronic capacitive transducer according to claim 30 wherein said first and third diamond layers comprise highly oriented diamond.

32. A microelectronic capacitive transducer according to claim 30 wherein said signal conditioning means comprises temperature compensation means for generating an output signal substantially independent of ambient temperature variation.

33. A microelectronic capacitive transducer according to claim 27 wherein said first electrically conductive layer, said diaphragm, and said mounting means define a sealed cavity so that the capacitive transducer operates as an absolute pressure sensor.

34. A microelectronic capacitive transducer according to claim 27 further comprising a substrate positioned on a face of said first electrically conducting layer opposite said diaphragm, and wherein said substrate and said first electrically conductive layer have respective aligned openings extending therethrough to define a vented cavity so that the capacitive transducer operates as a differential pressure sensor.