×

Planarized semiconductor structure using subminimum features

  • US 5,453,639 A
  • Filed: 10/27/1993
  • Issued: 09/26/1995
  • Est. Priority Date: 09/04/1992
  • Status: Expired due to Fees
First Claim
Patent Images

1. A planarized semiconductor structure comprising:

  • a semiconductor structure having a recessed area therein and having a surface adjacent said recessed area;

    a plurality of dispersed, oxidized pillars situated within said recessed area; and

    a planarized layer of fill comprising a chemical vapor-deposited oxide material, said layer of fill deposited over said pillars and said recessed area, wherein a second surface of said planarized layer of fill is substantially planar with said surface of said semiconductor structure, and wherein the oxidized pillars have a crystal structure which is different from that of the planarized layer of fill.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×