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Semiconductor sensors and method for fabricating the same

  • US 5,453,727 A
  • Filed: 03/15/1993
  • Issued: 09/26/1995
  • Est. Priority Date: 07/16/1991
  • Status: Expired due to Term
First Claim
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1. A magnetic sensor, comprising:

  • a first compound semiconductor layer having a high resistance;

    an InAs thin film layer grown on said first compound semiconductor layer; and

    an electrode formed on said InAs thin film layer, wherein said first compound semiconductor layer has a different composition from said InAs thin film layer, the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said InAs thin film layer to thereby have a lattice constant the same as or nearly the same as that of said InAs thin film layer, and wherein said first compound semiconductor layer has a band gap energy greater than that of the InAs thin film layer.

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