Semiconductor sensors and method for fabricating the same
First Claim
1. A magnetic sensor, comprising:
- a first compound semiconductor layer having a high resistance;
an InAs thin film layer grown on said first compound semiconductor layer; and
an electrode formed on said InAs thin film layer, wherein said first compound semiconductor layer has a different composition from said InAs thin film layer, the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said InAs thin film layer to thereby have a lattice constant the same as or nearly the same as that of said InAs thin film layer, and wherein said first compound semiconductor layer has a band gap energy greater than that of the InAs thin film layer.
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Accused Products
Abstract
The present invention is a method of fabrication of a thin film of Inx Ga1-x Asy Sb1-y (0<x≦1.0, 0≦y≦1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of Inx Ga1-x Asy Sb1-y (0<x≦1.0, 0≦y≦1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.
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Citations
40 Claims
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1. A magnetic sensor, comprising:
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a first compound semiconductor layer having a high resistance; an InAs thin film layer grown on said first compound semiconductor layer; and an electrode formed on said InAs thin film layer, wherein said first compound semiconductor layer has a different composition from said InAs thin film layer, the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said InAs thin film layer to thereby have a lattice constant the same as or nearly the same as that of said InAs thin film layer, and wherein said first compound semiconductor layer has a band gap energy greater than that of the InAs thin film layer. - View Dependent Claims (4, 7, 8, 13, 14, 17, 20, 21, 26)
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2. A magnetic sensor, comprising:
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a first compound semiconductor layer having a high resistance; a thin film layer of Inx Ga1-x As (0<
x<
1.0) grown on said first compound semiconductor layer; andan electrode formed on said Inx Ga1-x As thin film layer, wherein said first compound semiconductor layer has a different composition from said Inx Ga1-x As thin film layer the composition of said first compound semiconductor layer being predetermined so as to match a lattice of said first compound semiconductor layer with that of said Inx Ga1-x As thin film layer to thereby have a lattice constant the same as or nearly the same as that of the Inx Ga1-x As thin film layer and wherein said first compound semiconductor layer has a band gap energy greater than that of the Inx Ga1-x As thin film layer - View Dependent Claims (5, 9, 10, 15, 18, 22, 23)
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3. A magnetic sensor, comprising a high resistance first compound semiconductor layer, a thin film layer of Inx Ga1-x Asy Sb1-y (0<
- x≦
1.0, 0≦
y<
1.0) grown on said first compound semiconductor layer, and an electrode formed on said Inx Ga1-x Asy Sb1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of the Inx Ga1-x Asy Sb1-y. - View Dependent Claims (6, 11, 12, 16, 19, 24, 25)
- x≦
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27. A method for producing a magnetic sensor comprising the steps of;
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forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of InAs, forming a layer of InAs on said layer, treating said InAs layer, and forming a plurality of ohmic electrodes on said InAs layer. - View Dependent Claims (30)
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28. A method for producing a magnetic sensor comprising the steps of;
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forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of InAs, and a band gap energy greater than that of Inx Ga1-x As, forming a layer of Inx Ga1-x As (0<
x<
1.0) on said layer,treating said Inx Ga1-x As layer, and forming a plurality of ohmic electrodes on said Inx Ga1-x As layer. - View Dependent Claims (31)
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29. A method for producing a magnetic sensor comprising the steps of;
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forming a high resistance first compound semiconductor layer having a lattice constant the same as or nearly the same as that of Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of Inx Ga1-x Asy Sb1-y, forming a layer of Inx Ga1-x Asy Sb1-y (0<
x≦
1.0, 0≦
y<
1.0) on said layer,treating said Inx Ga1-x Asy Sb1-y layer, and forming a plurality of ohmic electrodes on said Inx Ga1-x Asy Sb1-y layer. - View Dependent Claims (32)
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33. A hybrid magnetic sensor wherein a magnetic sensor comprising a high resistance first compound semiconductor layer in that, a thin film layer of Inx Ga1-x Asy Sb1-y (0<
- x≦
1.0, 0≦
y≦
1.0) grown on said first compound semiconductor layer, and an electrode formed on said Inx Ga1-x Asy Sb1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of the Inx Ga1-x Asy Sb1-y, and a silicon monolithic integrated circuit chip are molded together in the same package. - View Dependent Claims (34)
- x≦
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35. A semiconductor optical sensor comprising a high resistance first compound semiconductor layer, a thin film layer of Inx Ga1-x Asy Sb1-y (0<
- x≦
1.0, 0≦
y≦
1.0) grown on said first compound semiconductor layer, and an electrode for detecting light formed on said Inx Ga1-x Asy Sb1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of the Inx Ga1-x Asy Sb1-y. - View Dependent Claims (36)
- x≦
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37. A semiconductor pressure sensor comprising a high resistance first compound semiconductor layer, a thin film layer of Inx Ga1-x Asy Sb1-y (0<
- x≦
1.0, 0≦
y≦
1.0) grown on said first compound semiconductor layer, and an electrode for detecting pressure formed on said Inx Ga1-x Asy Sb1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of the Inx Ga1-x Asy Sb1-y. - View Dependent Claims (38)
- x≦
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39. A semiconductor strain sensor comprising a high resistance first compound semiconductor layer, a thin film layer of Inx Ga1-x Asy Sb1-y (0<
- x≦
1.0, 0≦
y≦
1.0) grown on said first compound semiconductor layer, and an electrode for detecting strain formed on said Inx Ga1-x Asy Sb1-y thin film layer, wherein said first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the Inx Ga1-x Asy Sb1-y, and a band gap energy greater than that of the Inx Ga1-x Asy Sb1-y. - View Dependent Claims (40)
- x≦
Specification