Semiconductor memory with improved redundant sense amplifier control

• US 5,455,798 A
• Filed: 02/22/1994
• Issued: 10/03/1995
• Est. Priority Date: 01/31/1992
• Status: Expired due to Term

• Current Assignee: SGS Thomson Microelectronics Inc (STMicroelectronics NV)
• Original Assignee: SGS Thomson Microelectronics Inc (STMicroelectronics NV)
• Inventors: McClure, David C.
• Primary Examiner(s): Yoo, Do Hyun
• Application Number:
  US08/199,859
• Time in Patent Office: 588 Days
• Field of Search: 365/200, 365/225.7, 365/230.02, 365/230.06, 307/449, 307/463
• US Class Current: 365/200
• CPC Class Codes: G11C 29/781 combined in a redundant decoder
• CPC Class Codes: G11C 29/83 with reduced power consumption
• CPC Class Codes: G11C 29/846 by choosing redundant lines at an output stage

Abstract

An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder associated with each column, each of which includes a set of address fuses into which an address is programmed, responsive to which its associated redundant column is to be selected. A plurality of redundant sense amplifiers are each associated with selected redundant columns, and are each controlled to begin the sense operation prior to propagation of the address signal through the redundant column decoders and summing circuitry. In the event that the received memory address does not match any of the programmed values in the redundant column decoders associated with a redundant sense amplifier, the sense operation is terminated. In this way, the sense operation is not delayed by the additional delay required for redundant decoding and propagation of the redundant address signals, and thus the access time penalty for accessing a redundant memory cell is much reduced or eliminated. The coupling of each redundant sense amplifier is controlled by a redundant multiplexer associated with each of the input/output terminals. Each redundant multiplexer receives the redundant column select signals from each associated redundant column decoder, and includes fuses which indicate if its input/output terminal is to be placed in communication with its associated sense amplifier upon selection of a redundant column.

Claims

1. An integrated circuit comprising a memory, said integrated circuit comprising:

a plurality of primary memory cells, arranged in a primary array;

means for accessing a primary memory cell responsive to an address signal presented thereto;

a redundant memory array comprising a plurality of redundant memory cells;

a redundant decoder, for selecting a redundant memory cell responsive to an address signal presented thereto corresponding to a programmed value in said redundant decoder;

redundant read means for sensing the state of a selected redundant memory cell and communicating the same to an output of the memory, said redundant read means having a control input coupled to receive an enable signal;

means for generating an initiate pulse responsive to a memory cycle signal indicating that a memory access is to be initiated;

an enable circuit, for generating said enable signal responsive to the initiation of a memory access cycle, comprising;

a leading edge circuit, having an input coupled to the output of said generating means and having an output for presenting a control signal for a delay period responsive to receiving said initiate pulse;

a match circuit, having an input coupled to the output of said redundant decoder, and having an output for presenting a match signal responsive to said redundant decoder indicating that the address signal received thereby corresponds to a programmed value therein; and

enable logic, having inputs coupled to receive said control signal and said match signal, and having an output for generating said enable signal responsive to receipt of either said control signal or said match signal.

2. The integrated circuit of claim 1, wherein said leading edge circuit generates said control signal responsive to the leading edge of said initiate pulse;

and wherein said enable logic also has an input for receiving said initiate pulse, and is responsive thereto in such a manner that said enable signal is generated responsive to receipt of either said control signal or said match signal in combination with the end of said initiate pulse.

3. The integrated circuit of claim 2, wherein said leading edge circuit comprises:

a pulse generating circuit for generating said control signal as a first enable pulse responsive to receiving said leading edge of said initiate pulse.

4. The integrated circuit of claim 1, wherein said redundant memory array comprises a plurality of redundant columns;

wherein said redundant decoder comprises a plurality of redundant column decoders, each associated with one of said plurality of redundant columns;

and wherein said match circuit comprises;

a conjunctive logic circuit, having an input coupled to each of said plurality of redundant column decoders, and having an output for presenting said match signal responsive to any of said redundant column decoders indicating that the received address signal corresponds to a programmed value in one of said redundant column decoders.

5. The integrated circuit of claim 1, wherein said redundant read means comprises a sense amplifier.

6. The integrated circuit of claim 1, wherein said enable logic is responsively coupled to said match circuit so that, responsive to said redundant decoder indicating that no redundant memory cell is selected, said enable logic terminates the enable signal.

7. The integrated circuit of claim 6, wherein said enable logic is responsively coupled to said match circuit so that, responsive to said redundant decoder failing to indicate within a delay period after the enable signal is generated that a redundant memory cell is to be selected, said enable logic terminates the enable signal.

8. The integrated circuit of claim 1, wherein said redundant memory array comprises a plurality of redundant columns;

wherein said redundant decoder comprises a plurality of redundant column decoders, each associated with one of said plurality of redundant columns;

and wherein said match circuit is coupled to each of said plurality of redundant column decoders and said enable logic is coupled to said match circuit in such a manner that, responsive to said redundant decoders indicating that no redundant memory cell is selected, said enable logic terminates the enable signal.

9. The integrated circuit of claim 8, wherein said enable logic is responsively coupled to said match circuit in such a manner that, responsive to all of said plurality of redundant column decoders failing to indicate within a delay period after said enable signal is generated that a redundant memory cell is to be selected, said enable signal is terminated.

10. The integrated circuit of claim 1, wherein said means for generating an initiate pulse comprises:

a transition detection circuit, coupled to input terminals of said memory, for detecting a transition at at least one of said input terminals, and having an output, coupled to said enable logic, for presenting an initiate signal responsive to detecting such a transition.

11. The integrated circuit of claim 1, further comprising:

a gate having a first input coupled to receive said enable signal, having a second input coupled to receive said initiate pulse, and having an output coupled to said redundant read means, for generating a signal at its output responsive to said enable signal and to the end of said initiate pulse.

12. The integrated circuit of claim 1, further comprising:

an external terminal, for receiving the memory cycle signal.

13. The integrated circuit of claim 1, further comprising:

data processing circuitry coupled to said memory.

14. A method of operating a memory in an integrated circuit, said memory including primary and redundant memory cells, a redundant decoder into which a memory address may be programmed responsive to receipt of which a redundant memory cell is to be accessed instead of a primary memory cell, and a redundant read circuit for reading the state of an accessed redundant memory cell and communicating the same externally from the memory, said redundant read circuit dynamically controlled by a read enable signal, comprising:

responsive to a memory cycle signal indicating initiation of a memory access, generating said read enable signal to said redundant read circuit;

comparing a received memory address with the programmed address in said redundant decoder;

after said generating step, terminating said read enable signal responsive to said comparing step indicating that the received memory address does not match the programmed address.

15. The method of claim 14, further comprising:

generating an initiate pulse responsive to receiving said memory cycle signal indicating initiation of a memory access;

and wherein said step of generating said read enable signal further comprises;

gating said read enable signal with said initiate pulse in such a manner that said redundant read circuit is not enabled responsive to said read enable signal until after said initiate pulse.

16. The method of claim 14, wherein said plurality of redundant memory cells are arranged in a plurality of redundant columns;

wherein said redundant decoder comprises a plurality of redundant column decoders, each associated with one of said redundant columns, each of which may be programmed with a value responsive to which a redundant memory cell in its associated redundant column is to be selected, and each having an output for presenting a signal indicating whether or not the received memory address matches its programmed value;

and wherein said comparing step comprises;

performing a logic operation on the outputs of said plurality of redundant column decoders to determine if the received memory address matches the programmed value in any of said plurality of redundant column decoders.

17. The method of claim 14, further comprising:

receiving the memory cycle signal at an external terminal.