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Dual dynamic sense amplifiers for a memory array

  • US 5,455,802 A
  • Filed: 12/22/1992
  • Issued: 10/03/1995
  • Est. Priority Date: 12/22/1992
  • Status: Expired due to Term
First Claim
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1. A data sensing circuit for use with a memory array, comprising:

  • a latch for holding an output state;

    a first CMOS dynamic sense amplifier connected to an input line and a complementary input line, and having an output connected to the latch for writing an output state thereto;

    a second CMOS dynamic sense amplifier connected to the input line and complementary input line, and having an output connected to the latch for writing an output state thereto; and

    a clocking circuit connected to the first and second sense amplifiers, wherein the clocking circuit generates a first clocking signal which enables the first sense amplifier to sense data on the input line and complementary input line and write the sensed data to the latch through the first sense amplifier output, and wherein the clocking circuit generates a second clocking signal, after a predetermined period after the first clocking signal, which enables the second sense amplifier to sense data on the input line and complementary input line and write the sensed data to the latch through the second sense amplifier output, and wherein the first and second clocking signals are generated during one read cycle of the memory array.

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