Control of particle generation within a reaction chamber

• US 5,456,796 A
• Filed: 06/02/1993
• Issued: 10/10/1995
• Est. Priority Date: 06/02/1993
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Gupta, Anand, Lanucha, Joseph
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/071,288
• Time in Patent Office: 860 Days
• Field of Search: 156/643, 156/646, 156/345, 204/298.37, 204/298.34, 134/1, 118/723 E, 427/569, 427/571
• US Class Current: 438/710
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.

Claims

1. A method for agitating and/or circulating particles present within a reaction chamber, comprising the steps of:

increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a first rate of about 500 to 2000 watts/second to initiate a first plasma therein, wherein said RF signal power level is rapidly increased;

exhausting said particles from within said reaction chamber; and

positioning a semiconductor wafer within said reaction chamber for wafer processing;

increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a second rate from about less than 1 watt/second to 100 watts/second to initiate a second plasma therein, wherein said RF signal power level is slowly increased, and wherein said second plasma does not agitate and/or circulate said particles.

2. The method of claim 1, wherein said RF signal power level is rapidly increased at a first rate of about 500 watts/second.

3. The method of claim 1, wherein said RF signal power level is slowly increased at a second rate of about 50 watts/second.

4. A method for removing contaminating particles trapped in a plasma sheath/glow region interface within a reaction chamber, comprising the steps of:

removing any reactants used during processing from the reaction chamber;

maintaining said plasma within the reaction chamber;

filling the reaction chamber with an inert gas;

applying a magnetic field to said reaction chamber, such that the force and velocity components of said magnetic field are oriented to move said particles away from said plasma sheath/interface; and

exhausting said particles from said reaction chamber.

5. A method for preventing contamination of a semiconductor wafer during integrated circuit fabrication within a reaction chamber, comprising the steps of:

increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a first selected rate, prior to introduction of said semiconductor wafer into said reaction chamber for processing, to initiate a first plasma therein, said first plasma effecting controlled agitation and/or circulation of said particles within said reaction chamber;

exhausting said particles from within said reaction chamber to effect chamber cleaning;

extinguishing said first plasma;

positioning said semiconductor wafer within said reaction chamber for wafer processing;

increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a second selected rate to initiate a second plasma therein;

wherein said second plasma does not agitate and/or circulate said particles.

6. The method of claim 5, wherein said RF signal power level for said first plasma is increased at a rate of about 500 watts/second.

7. The method of claim 5, wherein said RF signal power level for said second plasma is increased at a rate of about 50 watts/second.

8. The method of claim 5, further comprising the steps of:

applying a magnetic field proximate to said reaction chamber;

removing residual particles from a second plasma sheath/glow region interface in response to said magnetic field; and

exhausting said residual particles from said reaction chamber.

9. A method for initiating a plasma within a reaction chamber without agitating and/or circulating particles present therein, comprising the steps of:

positioning a semiconductor wafer within said reaction chamber for wafer processing;

introducing an inert gas into said reaction chamber;

slowly increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a rate of about less than 1 watt/second to 100 watts/second to initiate a plasma therein having a shallow ramp; and

introducing a reactant into said reaction chamber after said plasma is at full power.

10. The method of claim 9, wherein said RF signal power level is increased at a rate of about 50 watts/second.

11. The method of claim 9, further comprising the steps of:

applying a magnetic field proximate to said reaction chamber;

removing residual particles from a plasma sheath/glow region interface in response to said magnetic field; and

exhausting said residual particles from said reaction chamber.

12. A method for preventing contamination of a semiconductor wafer during integrated circuit fabrication within a reaction chamber, comprising the steps of:

rapidly increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a rate of about 500 to 2000 watts/second, prior to introduction of said semiconductor wafer into said reaction chamber for processing, to initiate a first plasma therein having a steep ramp;

said plasma effecting controlled agitation and/or circulation of said particles within said reaction chamber;

exhausting said particles from within said reaction chamber to effect chamber cleaning;

extinguishing said first plasma;

positioning said semiconductor wafer within said reaction chamber for wafer processing;

slowly increasing the power level of an RF signal supplied to electrodes within the reaction chamber at a rate from less than 1 watt/second to 100 watts/second to initiate a second plasma therein having a shallow ramp;

wherein said second plasma does not agitate and/or circulate said particles;

applying a magnetic field generated by a magnet placed proximate to said reaction chamber;

removing residual particles from a second plasma sheath/glow region interface in response to said magnetic field; and

exhausting said residual particles from said reaction chamber.

13. An apparatus for preventing contamination of a semiconductor wafer during integrated circuit fabrication within a reaction chamber, comprising:

a control circuit that generates a drive signal;

an RF generator that provides an output RF signal having a ramp rate that is a function of the ramp rate of said drive signal;

wherein said drive signal increases the power level of the RF signal supplied by said RF generator to electrodes within the reaction chamber at a first rate of about 500 to 2000 watts/second, prior to introduction of said semiconductor wafer into said reaction chamber for processing, to initiate a first plasma therein, said first plasma effecting controlled agitation and/or circulation of said particles within said reaction chamber; and

at a second rate of about less than 1 watt/second to 100 watts/second, after introduction of said semiconductor wafer into said reaction chamber for processing, to initiate a second plasma therein, wherein said second plasma does not agitate and/or circulate said particles; and

an exhaust adapted to remove said particles from within said reaction chamber to effect chamber cleaning prior to introduction of said semiconductor wafer into said reaction chamber for processing.

14. The apparatus of claim 13, further comprising:

a magnet for producing a magnetic field proximate to said reaction chamber to remove residual particles from a second plasma sheath/glow region interface in response to said magnetic field.