Semiconductor amplifier or laser having integrated lens

• US 5,457,569 A
• Filed: 06/30/1994
• Issued: 10/10/1995
• Est. Priority Date: 06/30/1994
• Status: Expired due to Term

• Current Assignee: AT&T IPM Corp. (AT&T, Inc.)
• Original Assignee: AT&T IPM Corp. (AT&T, Inc.)
• Inventors: Young, Martin G., Liou, Kang-Yih
• Primary Examiner(s): Hellner, Mark
• Application Number:
  US08/268,479
• Time in Patent Office: 467 Days
• Field of Search: 372/108, 372/21, 372/22, 372/23, 372/43, 372/50, 372/99, 372/101, 359/326, 359/328, 359/333, 359/344, 359/396, 385/33
• US Class Current: 359/344
• CPC Class Codes: H01S 3/005 Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/10 Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence
• CPC Class Codes: H01S 5/1064 varying width along the optical axis
• CPC Class Codes: H01S 5/1085 Oblique facets
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

An optical device includes a semiconductor optical amplifier and a lens for receiving optical energy from the optical amplifier. The lens and the optical amplifier are monolithically integrated on a common substrate. The optical amplifier may be of the type having a tapered active region. Rather than an optical amplifier, a semiconductor laser may be integrated with the lens. The lens may be formed by changing the refractive index of the waveguide core which is formed in the semiconductor material. This refractive index change may be produced by changing the thickness of a portion of the waveguide core layer.

Claims

1. An optical device comprising:

a semiconductor optical amplifier; and

a lens for receiving optical energy from the optical amplifier, said lens and said optical amplifier being monolithically integrated on a common substrate, said lens having a focal point located within said common substrate.

2. The device of claim 1 wherein said lens comprises a portion of a waveguiding core layer of semiconductor material having a thickness of predetermined variation.

3. The device of claim 2 wherein said portion of the waveguiding core layer has a predetermined shape defining the shape of the lens.

4. The device of claim 1 wherein said focal point is located within said device near a facet of said common substrate.

5. The device of claim 1 wherein said optical amplifier includes a waveguide core having an active layer for supplying gain and an outer layer of electrically conductive material having a tapered shape that increases in width along a propagation axis of the optical amplifier, the portion of said active layer located beneath said outer conductive layer comprising a gain region of said conductive layer, said lens being located at a point along the propagation axis to receive optical energy from said waveguide core.

6. The device of claim 5 wherein said taper terminates in the direction of the propagation axis at a boundary between an amplifying section and a passive waveguiding section, said lens being located along said boundary.

7. The device of claim 5 wherein said waveguide core of said optical amplifier further comprises a passive waveguide layer in contact with said active layer.

8. The device of claim 6 wherein said taper forms an acute angle with a lateral surface oriented perpendicular to an input facet.

9. The device of claim 8 wherein said acute angle is approximately equal to 7°

.

10. The device of claim 7 wherein said waveguide core is formed from a InGaAs/GaAs multiple quantum well structure.

11. A monolithic semiconductor structure comprising:

a substrate defining an amplifying section and a passive waveguiding section;

a bottom cladding layer, a core layer and a top cladding layer all formed from semiconductor materials and disposed on said amplifying section and said passive waveguiding section of the substrate, the portion of the core layer in the amplifying section including a semiconductor material for supplying gain to an optical signal and the portion of the core layer in the passive waveguiding section forming a passive waveguide layer that does not supply gain; and

a lens having a prescribed shape and integrated on said substrate at a location such that optical energy propagating in the core layer passes through said lens, said lens having a focal point located within said structure.

12. The structure of claim 11 wherein said lens is disposed at a boundary between said amplifying section and said passive waveguiding section, said lens formed by producing a refractive step index resulting from a difference in thickness between the core layer in the amplifying section and the core layer in the passive waveguiding section.

13. The structure of claim 11 wherein said lens has a focal point located within the passive waveguiding section near a facet of said substrate.

14. An optical device comprising:

a semiconductor laser; and

a lens for receiving optical energy from the laser, said lens and said laser being monolithically integrated on a common substrate, said lens having a focal point located within said device.

15. The device of claim 14 wherein said lens is formed by a predetermined change in thickness of a portion of a waveguiding core layer of semiconductor material.

16. The device of claim 14 wherein said lens has a focal point located within said device near a facet of said common substrate.

17. The device of claim 14 wherein said semiconductor laser includes a waveguide core having an active layer for supplying gain and an outer layer of electrically conductive material having a tapered shape that increases in width along a propagation axis of the laser, the portion of said active layer located beneath said outer conductive layer comprising a gain region of said conductive layer, said lens being located at a point along the propagation axis to receive optical energy from said waveguide core.

18. The device of claim 17 wherein said taper terminates in the direction of the propagation axis at a boundary between a active section and a passive waveguiding section, said lens being located along said boundary.