Method of shaping inter-substrate plug and receptacles interconnects
First Claim
1. A method of connecting first and second semiconductor substrates, comprising the steps of:
- forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; and
forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second semiconductor substrates.
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Accused Products
Abstract
A method electrically and mechanically interconnects two surfaces of high density first and second semiconductor devices. The first semiconductor device (10) is formed with plug members (22) connected to nodes (18) of its circuit elements (14) and protruding from the first semiconductor device. The second semiconductor device (24) is formed having receptacle members (36) connected to nodes (32) of its circuit elements (28) and protruding from the second semiconductor device. The plug members are inserted into the receptacle member to interconnect the first and second semiconductor devices. The plug members may be removed from the receptacle member to disconnect the first and second semiconductor devices.
96 Citations
17 Claims
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1. A method of connecting first and second semiconductor substrates, comprising the steps of:
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forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; and forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second semiconductor substrates. - View Dependent Claims (2, 3, 4, 5)
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6. A method of connecting first and second substrates, comprising the steps of:
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forming a plug member on the first substrate coupled to a node of the first substrate, said step of forming said plug member further including the steps of, (a) providing the first substrate with an isolation layer disposed on said node of the first substrate, and (b) disposing a dielectric layer having a predetermined variation in composition on said isolation layer to achieve an etch rate varying with height above said isolation layer; and forming a receptacle member on the second substrate coupled to a node of the second substrate, said plug member being adapted for insertion into said receptacle member to interconnect the first and second substrates. - View Dependent Claims (7, 8, 9)
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10. A method of connecting first and second semiconductor substrates, comprising the steps of:
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forming a plug member on the first semiconductor substrate coupled to a node of the first semiconductor substrate; forming a receptacle member on the second semiconductor substrate coupled to a node of the second semiconductor substrate; inserting said plug member into said receptacle member to interconnect the first and second semiconductor substrates; and removing said plug member from said receptacle member to disconnect the first and second semiconductor substrates. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification