Power semiconductor module having a plurality of semiconductor arrangements

• US 5,459,356 A
• Filed: 02/16/1995
• Issued: 10/17/1995
• Est. Priority Date: 08/26/1992
• Status: Expired due to Term

• Current Assignee: Eupec Europaische Gesellschaft fur Leistungshalbleiter GmbH & Co. KG., Eupec Europeische Gesellschaft F Leistungshalbleiter mbH & Company KG, Siemens AG
• Original Assignee: Eupec Europeische Gesellschaft F Leistungshalbleiter mbH & Company KG, Siemens AG
• Inventors: Zwanziger, Peter, Spanke, Reinhold, Sommer, Karl-Heinz, Schulze, Gerhard, Papp, Gyoergy, Springmann, Walter
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US08/390,435
• Time in Patent Office: 243 Days
• Field of Search: 257/723, 257/773, 257/776, 257/925, 257/691, 257/692, 361/260, 361/264, 361/772, 361/777, 361/778, 361/784
• US Class Current: 257/773
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A plurality of semiconductor arrangements arranged on interconnects are cected parallel to one another in a module. The arrangements lie opposite one another in pairs. At least one pair and at most two pairs of semiconductor arrangements are arranged to follow one another in the direction of an axis of the module and are further connected to lead conductors. Positions of the lead conductors with respect to the contacted semiconductor arrangements are the same for each pair of semiconductor arrangements or, respectively, two respective pairs of semiconductor arrangements. Corresponding lead conductors are connected to one another above the interconnects.

Claims

1. A power semiconductor module having a plurality of semiconductor arrangements arranged on and electrically connected to interconnects and connected in parallel to one another and lie opposite one another in pairs along an axis lying parallel to a floor of the module, the module comprising:

a plurality of lead conductors wherein the plurality of lead conductors are connected to the interconnects such that at least one pair of the semiconductor arrangements and at most two pairs of the semiconductor arrangements lying behind one another in a direction of the axis are connected to at least two of the plurality of lead conductors, the at least two of the plurality of lead conductors being arranged in close immediate proximity and parallel to one another such that positions of the plurality of the at least two lead conductors with respect to the semiconductor arrangements are the same for each of the pair of semiconductor arrangements or for each of the two pairs of semiconductor arrangements resulting in symmetry of the semiconductor arrangements along the axis and identical inductances with respect to the semiconductor arrangements wherein the lead conductors corresponding to one another being electrically connectable above the interconnects by connecting lines.

2. The power semiconductor module of claim 1 wherein the lead conductors are arranged between the two pairs of semiconductor arrangments connected in parallel and following one another in the direction of the axis.

3. The power semiconductor module of claim 1 wherein each of the semiconductor arrangements further comprises:

field effect-controlled semiconductor components having a free-wheeling diode connected thereto anti-parallel.

4. The power semiconductor module of claim 1 wherein each of the semiconductor arrangements further comprises:

a series circuit of a diode and a field effect-controlled semiconductor component wherein a node of the series circuit is connected by an interconnect to a third lead conductor that is in substantial proximity to two other lead conductors and further wherein the third lead conductors are connected to one another above the interconnects.

5. The power semiconductor module of claim 1 wherein the semiconductor arrangements lying opposite one another along the axis symmetrically mirror one another relative to the axis.

6. The power semiconductor module of claim 2 wherein the pairs of semiconductor arrangements lying at both sides of the lead conductors symmetrically mirror one another relative to a a plane of the lead conductors.

7. The power semiconductor module of claim 1 further comprising:

a housing surrounding the semiconductor arrangements and the lead conductors; and

connecting lines outside of the housing for connecting the semiconductor arrangements and the lead conductors.