Integrated semiconductor memory with redundancy arrangement
First Claim
1. An integrated semiconductor memory with redundancy arrangement, which has the following characteristics:
- normal memory cells (NMC), which are disposed in a plurality of memory field block units (BK) that are individually activatable via associated activation units (ACT);
the memory field block units (BK) are activatable via their activation units (ACT) by means of block selection signals (BKS), and the block selection signals (BKS) can be generated by block decoders (BKDEC) from a first part (BKAD) of word line address signals (WLAD) that can be applied to the semiconductor memory;
the normal memory cells (NMC) are addressable per memory field block unit (BK) via normal word lines (NWL) and normal bit lines (NBL, NBL*);
normal word line decoders (NWDEC) for selecting a normal word line (NWL) in a memory field block unit (BK) as a function of a second part (WL2AD) of the word line address signals (WLAD), under the control of the block selection signal (BKS) associated with the applicable memory field block unit (BK);
bit line decoders (BDEC) for selecting a normal bit line (NBL, NBL*) as a function of bit line address signals (BLAD) that can be applied to the semiconductor memory;
redundant memory cells (RMC) in the memory field block units (BK) along redundant word lines (RWL);
programmable redundant word line decoders (RWDEC) in the memory field block units (BK) for selection of a redundant word line (RWL) as a function of the second part (WL2AD) of the word line address signals (WLAD), in the case in which on the basis of a programming that has been carried out of a redundant word line decoder (RWDEC), memory cells along normal word lines (NWL) are to be functionally replaced via redundant memory cells (RMC) that are addressable via an applicable redundant word line (RWL), characterized byat least one programmable redundant block decoder (RBK) for selection of the redundant word line decoders (RWDEC), both in cases in which a redundant word line (RWL) to be selected, having replacement redundant memory cells (RMC), is located in the same memory field block unit (BK) as the normal line (NWL) having the memory cells to be replaced, and in cases in which a redundant word line (RWL) to be selected, having replacement redundant memory cells (RMC), is disposed in an arbitrary different memory field block unit (BK) from the normal word line (NWL) having the memory cells to be replaced.
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Abstract
An integrated semiconductor memory has a block decoder BKDEC having block selection signals BKS and a plurality of main memory area block units BK which can be individually activated. The main memory area block units BK contain memory locations which can be selected via word and bit lines NWL, NBL, NBL and redundancy memory locations RMC, which can be selected via redundancy word lines RWL. The main memory area block units BK contain programmable redundancy block decoders RBK, which in conjunction with redundancy word line decoders RWDEC enable the selection of redundancy word lines RWL. If a redundancy word line RWL is to be selected, it is exclusively that main memory area block unit BK in which the redundancy word line RWL that is to be selected is contained that is activated. In this case, activation which is otherwise usual is suppressed via an appropriate block selection signal BKS. It is rendered possible in this way that the redundancy word line RWL that is to be selected together with its redundancy memory locations RMC can be arranged in a different main memory area block unit BK from the memory locations to be replaced together with their normal word lines NWL, but also in an (any) other main memory area block unit BK. It is possible in this way to increase the yield in the production of integrated semiconductor memories.
35 Citations
16 Claims
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1. An integrated semiconductor memory with redundancy arrangement, which has the following characteristics:
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normal memory cells (NMC), which are disposed in a plurality of memory field block units (BK) that are individually activatable via associated activation units (ACT); the memory field block units (BK) are activatable via their activation units (ACT) by means of block selection signals (BKS), and the block selection signals (BKS) can be generated by block decoders (BKDEC) from a first part (BKAD) of word line address signals (WLAD) that can be applied to the semiconductor memory; the normal memory cells (NMC) are addressable per memory field block unit (BK) via normal word lines (NWL) and normal bit lines (NBL, NBL*); normal word line decoders (NWDEC) for selecting a normal word line (NWL) in a memory field block unit (BK) as a function of a second part (WL2AD) of the word line address signals (WLAD), under the control of the block selection signal (BKS) associated with the applicable memory field block unit (BK); bit line decoders (BDEC) for selecting a normal bit line (NBL, NBL*) as a function of bit line address signals (BLAD) that can be applied to the semiconductor memory; redundant memory cells (RMC) in the memory field block units (BK) along redundant word lines (RWL); programmable redundant word line decoders (RWDEC) in the memory field block units (BK) for selection of a redundant word line (RWL) as a function of the second part (WL2AD) of the word line address signals (WLAD), in the case in which on the basis of a programming that has been carried out of a redundant word line decoder (RWDEC), memory cells along normal word lines (NWL) are to be functionally replaced via redundant memory cells (RMC) that are addressable via an applicable redundant word line (RWL), characterized by at least one programmable redundant block decoder (RBK) for selection of the redundant word line decoders (RWDEC), both in cases in which a redundant word line (RWL) to be selected, having replacement redundant memory cells (RMC), is located in the same memory field block unit (BK) as the normal line (NWL) having the memory cells to be replaced, and in cases in which a redundant word line (RWL) to be selected, having replacement redundant memory cells (RMC), is disposed in an arbitrary different memory field block unit (BK) from the normal word line (NWL) having the memory cells to be replaced. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification