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Anisotropic liquid phase photochemical etch

  • US 5,460,687 A
  • Filed: 05/20/1994
  • Issued: 10/24/1995
  • Est. Priority Date: 10/30/1992
  • Status: Expired due to Term
First Claim
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1. An anisotropic etch method comprising:

  • (a) supplying a substrate having an etch mask in contact with a surface of said substrate, said surface having one or more exposed areas not covered by said etch mask;

    (b) submersing said substrate in a liquid, said liquid including at least one etchant and one passivant, said etchant capable of etching said surface, said passivant forming a passivation layer on said surface, said passivation layer being substantially insoluble in said liquid; and

    (c) illuminating said substrate with radiation to produce illuminated areas and unilluminated areas on said substrate, said radiation removing said passivation layer from said illuminated areas, causing said illuminated areas to be etched while said unilluminated areas remain substantially unetched;

    whereby an anisotropic etch of said surface in said exposed areas is achieved.

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