Production method of a verticle type MOSFET

• US 5,460,985 A
• Filed: 03/25/1993
• Issued: 10/24/1995
• Est. Priority Date: 07/26/1991
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Ipics Corporation
• Inventors: Tokura, Norihito, Takahashi, Shigeki
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US08/030,338
• Time in Patent Office: 943 Days
• Field of Search: 437/40, 437/913, 437/67, 437/68, 437/69, 437/72, 437/985, 148/DIG. 116, 148/DIG. 117, 148/DIG. 118, 148/DIG. 126
• US Class Current: 438/271
• CPC Class Codes: H01L 21/28167 on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: Y10S 148/116 Oxidation, differential
• CPC Class Codes: Y10S 148/126 Power FETs

Abstract

A vertical type power MOSFET remarkably reduces its ON-resistance per area. A substantial groove formation in which a gate structure is constituted is performed beforehand utilizing the LOCOS method before the formation of a p-type base layer and an n⁺ -type source layer. The p-type base layer and the n⁺ -type source layer are then formed by double diffusion in a manner of self-alignment with respect to a LOCOS oxide film, simultaneously with which channels are set at sidewall portions of the LOCOS oxide film. Thereafter the LOCOS oxide film is removed to provide a U-groove so as to constitute the gate structure. Namely, the channels are set by the double diffusion of the manner of self-alignment with respect to the LOCOS oxide film, so that the channels, which are set at the sidewall portions at both sides of the groove, provide a structure of exact bilateral symmetry, there is no positional deviation of the U-groove with respect to the base layer end, and the length of the bottom face of the U-groove can be made minimally short. Therefore, the unit cell size is greatly reduced, and the ON-resistance per area is greatly decreased.

Claims

1. A production method of a vertical type MOSFET comprising steps of:

preparing a semiconductor substrate having a first concentration of an impurity;

forming a semiconductor layer on a first face of said semiconductor substrate, said semiconductor layer having a surface oriented in a (111) crystal plane, having a first conductive type, and having a second concentration of an impurity lower than said first concentration of an impurity;

forming a local oxide film on a region of said semiconductor layer and contacting said semiconductor layer at a surface in a (100) crystal plane;

forming a base layer by diffusing impurities of a second conductive type in said semiconductor layer in a manner of self-alignment with respect to said local oxide film;

forming a source layer by diffusing impurities of said first conductive type in said semiconductor layer in a manner of self-alignment with respect to said local oxide film;

forming a groove structure including a channel by removing said local oxide film;

forming a gate oxide film having a film thickness thicker at a bottom face portion of said groove than a film thickness at a side face portion of said groove, by oxidizing an inner wall of said groove;

forming a gate electrode on said gate oxide film;

forming a source electrode in electrical contact with said source layer and said base layer; and

forming a drain electrode in electrical contact with a second face of said semiconductor substrate.

2. A production method of a vertical type MOSFET according to claim 1, wherein said step of forming said gate oxide film further comprises a step of controlling an oxidation velocity of said inner wall of said groove.

3. A production method of a vertical type MOSFET according to claim 1, wherein said step of preparing said semiconductor substrate includes a step of selecting said semiconductor substrate of said first conductive type.

4. A production method of a vertical type MOSFET according to claim 1, wherein said step of preparing said semiconductor substrate includes a step of selecting said semiconductor substrate of said second conductive type.

5. A production method of a vertical type MOSFET according to claim 1, further comprising a step of etching said semiconductor layer to form an initial groove in said surface of said semiconductor layer prior to said step of forming said local oxide film.

6. A production method of a vertical type MOSFET according to claim 1, wherein said step of forming a local oxide film includes a step of making a surface pattern shape of said local oxide film an equilateral triangle shape such that one side of said equilateral triangle shape is along a <

211>

crystal axis.

7. A production method of a vertical type MOSFET, comprising steps of:

preparing a semiconductor substrate having a silicon layer of a first conductivity type at a first face side thereof, wherein an impurity concentration of said silicon layer is lower than that of said semiconductor substrate, said silicon layer having a main surface oriented in a (111) crystal plane;

forming a local oxide film at a region of said main surface of said silicon layer by local oxidation, said local oxide film having a bottom portion and inclined side portions;

forming a base layer of a second conductivity type and a source layer of said first conductivity type at said inclined side portions of said local oxide film in a manner of self-aligning with said local oxide film by double-diffusing impurities of a second conductivity type and of said first conductivity type successively from said main surface using said local oxide film as a mask, whereby channel regions are disposed to contact with said inclined side portions of said local oxide film;

forming a groove structure having a bottom wall which is oriented in said (111) crystal plane and inclined side walls corresponding to said channel regions, by removing said local oxide film;

forming a gate oxide film by oxidizing said bottom wall and said inclined side walls of said groove structure, wherein a film thickness of said gate oxide film is thicker at said bottom wall than a film thickness of said gate oxide film at said inclined side walls due to said crystal plane of said bottom wall;

forming a gate electrode on said gate oxide film;

forming a source electrode electrically contacting with said source layer and said base layer; and

forming a drain electrode electrically contacting with a second face side of said semiconductor substrate.

8. A production method of a vertical type MOSFET according to claim 7, further comprising a step of forming an initial groove at said main surface of said silicon layer in said region where said local oxide film is formed, prior to said step of forming a local oxide film.

9. A production method of a vertical type MOSFET according to claim 8, wherein said local oxidizing step includes a step of controlling an angle of said inclined side portions such that at least one of said channel regions contacting with said inclined side portions is oriented substantially in a (100) crystal plane.

10. A production method of a vertical type MOSFET according to claim 9, wherein said local oxidizing step includes a step of making a surface pattern shape of said local oxide film an equilateral triangle shape such that one side of said equilateral triangle shape is along a <

211>

crystal axis.

11. A production method of a vertical type MOSFET according to claim 7, wherein said step of preparing said semiconductor substrate includes a step of selecting said semiconductor substrate of said first conductivity type.

12. A production method of a vertical type MOSFET, comprising steps of:

preparing a semiconductor substrate having a silicon layer of a first conductivity type at a first face side thereof, wherein an impurity concentration of said silicon layer is lower than that of said semiconductor substrate;

forming a local oxide film at a region of a main surface of said silicon layer by local oxidation, said local oxide film having a bottom portion and a side portion, wherein said local oxidizing step includes a step of controlling an angle of said side portion such that a corresponding region of said silicon layer contacting with said side portion is oriented in a (100) crystal plane;

forming a base layer of a second conductivity type and a source layer of said first conductivity type at said side portion of said local oxide film in a manner of self-aligning with said local oxide film by double-diffusing impurities of a second conductivity type and of said first conductivity type successively from said main surface using said local oxide film as a mask, whereby a channel region is disposed in said corresponding region which contacts with said side portion of said local oxide film;

forming a groove structure having a bottom wall and a side wall which exposes said corresponding region by removing said local oxide film;

forming a gate oxide film in said groove structure;

forming a gate electrode on said gate oxide film, thereby said channel region being oriented in a (100) crystal plane;

forming a source electrode electrically contacting with said source layer and said base layer; and

forming a drain electrode electrically contacting with a second face side of said semiconductor substrate.

13. A production method of a vertical type MOSFET according to claim 12, further comprising a step of selecting an orientation of said main surface of said silicon layer in a (111) crystal plane.

14. A production method of a vertical type MOSFET according to claim 12, further comprising a step of forming an initial groove at said main surface of said silicon layer in said region where said local oxide film is formed, prior to said step of forming a local oxide film.

15. A production method of a vertical type MOSFET according to claim 12, wherein said step of preparing said semiconductor substrate includes a step of selecting said semiconductor substrate of said first conductivity type.