Process for polishing and analyzing a layer over a patterned semiconductor substrate

• US 5,461,007 A
• Filed: 06/02/1994
• Issued: 10/24/1995
• Est. Priority Date: 06/02/1994
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Kobayashi, Thomas S.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Tsai, H. Jey
• Application Number:
  US08/253,013
• Time in Patent Office: 509 Days
• Field of Search: 156/635-639, 437/225, 437/228, 365/357, 51/281 R, 51/283 R, 51/131.3
• US Class Current: 438/16
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/02 according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent B24B49/12 takes precedence
• CPC Class Codes: G01B 11/028 by measuring lateral position of a boundary of the object G01B11/022, G01B11/024, G01B11/04 take precedence
• CPC Class Codes: G01B 11/303 using photoelectric detection means

Abstract

A layer over a patterned semiconductor is polished and analyzed to determine a polishing endpoint. The analysis may be performed using reflected radiation beams or by a radiation scattering analyzer. The analysis may be performed on virtually any layer using a radiation source. The analysis may be performed with a liquid, such as an aqueous slurry, contacting the substrate. The polishing and analysis may be integrated such that both steps are performed on the same polisher.

Claims

1. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface and is an uppermost layer over the substrate;

polishing the layer to form a second exposed surface; and

analyzing the second exposed surface, wherein;

a radiation beam is directed towards the second exposed surface at a first angle relative to the second exposed surface;

the layer is opaque to the radiation beam;

at least a portion of the radiation beam is reflected away from the second exposed surface to form a reflected beam;

the reflected beam is at a second angle relative to the second exposed surface, wherein the second angle is within five degrees of a supplementary angle of the first angle;

a detector analyzes the reflected beam to determine a detected intensity; and

the step of polishing is repeated if the detected intensity is lower than a threshold intensity.

2. The process of claim 1, wherein step of irradiating is performed while a liquid contacts the second exposed surface.

3. The process of claim 1, further comprising polishing the layer for a fixed time after the detected intensity is at least as high as the threshold intensity.

4. The process of claim 1, wherein the step of analyzing is performed before slurry particles are removed.

5. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface and an edge;

polishing the layer to form a second exposed surface; and

analyzing the second exposed surface, wherein;

a radiation beam is directed towards the second exposed surface;

at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam;

if the edge is still present, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam;

a detector determines whether the secondary reflected beam is present; and

the step of polishing is repeated if the detector determines that the secondary reflected beam is present.

6. The process of claim 5, wherein step of irradiating is performed while a liquid contacts the second exposed surface.

7. The process of claim 5, further comprising polishing the layer for a fixed time after the detector determines that the secondary reflected beam is not present.

8. The process of claim 5, wherein the step of analyzing is performed before slurry particles are removed.

9. The process of claim 5, wherein the step of analyzing is performed using a radiation scattering analyzer.

10. The process of claim 5, wherein:

the radiation beam and the primary reflected beam lie along a plane; and

as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane.

11. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography;

polishing the layer to form a second exposed surface having a second topography; and

analyzing the second exposed surface with a radiation beam to detect topography changes along the second exposed surface, wherein the step of polishing is repeated if a topography change along the second exposed surface is detected, wherein;

the radiation beam is directed towards the second exposed surface;

at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam;

the radiation beam and primary reflected beam lie along a plane;

if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam; and

as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane.

12. The process of claim 11, wherein step of analyzing is performed while a liquid contacts the second exposed surface.

13. The process of claim 11, wherein the step of analyzing is performed using a radiation scattering analyzer.

14. The process of claim 11, wherein the step of analyzing forms an output that does not include:

information related to direction and magnitude of topography changes along the second exposed surface; and

thickness of the layer.

15. The process of claim 11, wherein:

the layer is transparent; and

the step of polishing does not expose any portion of the substrate.

16. The process of claim 11, wherein:

the layer is opaque; and

the step of polishing does not expose any portion of the substrate.

17. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface having a first topography with an edge;

analyzing the first topography with a radiation beam to form a first topographic output, wherein;

the radiation beam is directed towards the first exposed surface;

at least a portion of the radiation beam is reflected away from the first exposed surface to form a primary reflected beam of the first topography;

the radiation beam and primary reflected of the first topography lie along a plane;

at least a portion of the primary reflected beam of the first topography is reflected away from the edge to form a secondary reflected beam; and

as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane;

polishing the layer to form a second exposed surface having a second topography;

analyzing the second topography with a radiation beam to form a second topographic output, wherein;

the radiation beam is directed towards the second exposed surface;

at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam of the second topography;

the radiation beam and primary reflected beam of the second topography lie along a plane;

if an edge is present within the second exposed surface, at least a portion of the primary reflected beam of the second topography is reflected away from the edge to form a secondary reflected beam of the second topography; and

as seen by a top view of the substrate, the secondary reflected beam of the second topography is at an angle that is in a range of 80-100 degrees from the plane; and

comparing the first and second topographic outputs, wherein the step of polishing is repeated if the second topographic output lies within a tolerance the first topographic output.

18. The process of claim 17, wherein step of analyzing the second exposed surface is performed while a liquid contacts the second exposed surface.

19. The process of claim 17, wherein the radiation beam is generated by a laser of a radiation scattering analyzer.

20. The process of claim 17, wherein both of the first and second topographic outputs do not include information related to thickness of the layer.

21. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface;

polishing the layer to form a second exposed surface with a slurry having slurry particles;

analyzing the second exposed surface with a radiation beam, wherein;

the radiation beam is directed towards the second exposed surface;

at least a portion of the radiation beam is reflected away from the second exposed surface to form a primary reflected beam;

the radiation beam and primary reflected beam lie along a plane;

if an edge is present within the second exposed surface, at least a portion of the primary reflected beam is reflected away from the edge to form a secondary reflected beam;

as seen by a top view of the substrate, the secondary reflected beam is at an angle that is in a range of 80-100 degrees from the plane; and

this step is performed prior to removing the slurry particles and drying the substrate and after the step of polishing; and

drying the substrate after the step of analyzing.

22. The process of claim 21, further comprising a step of removing the slurry particles from the substrate prior to the step of analyzing.

23. The process of claim 21, further comprising a step of removing slurry particles between the steps of analyzing and drying.

24. The process of claim 21, further comprising a step of analyzing the first exposed surface prior to the step of polishing, wherein this step is performed while a liquid contacts the layer.

25. The process of claim 21, wherein the steps of polishing and analyzing are performed while water contacts the layer.

26. The process of claim 21, wherein the steps of polishing and analyzing are performed in a polisher.

27. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface;

polishing the layer to form a second exposed surface; and

analyzing the second exposed surface, wherein;

a spectral incident radiation beam is directed towards the second exposed surface;

at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam;

a detector analyzes the reflected beam to whether reflected beam is polarized; and

the step of polishing is repeated if the reflected beam is polarized.

28. The process of claim 27, wherein the layer is opaque to the spectral incident radiation beam.

29. A process for polishing a layer over a patterned semiconductor substrate comprising the steps of:

forming the layer over the patterned semiconductor substrate, wherein the layer has a first exposed surface;

polishing the layer to form a second exposed surface; and

analyzing the second exposed surface, wherein;

a spectral incident radiation beam is directed towards the second exposed surface;

at least a portion of the spectral incident radiation beam is reflected away from the second exposed surface to form a reflected beam;

a detector analyzes the reflected beam to whether the reflected beam is spectral; and

the step of polishing is repeated if the reflected beam is not spectral.

30. The process of claim 29, wherein the layer is opaque to the spectral incident radiation beam.