Semiconductor device interconnect layout structure for reducing premature electromigration failure due to high localized current density
First Claim
1. An interconnect structure for reducing peak localized interconnect current density by distributing current flow around a perimeter of an interlevel connector in a semiconductor device, comprising:
- a first interconnect level for connection to a second interconnect level by said interlevel connector, wherein said perimeter of said interlevel connector is disposed at a juncture between said first interconnect level and said interlevel connector; and
at least two fingers protruding from said first interconnect level for connecting to said perimeter of said interlevel connector, wherein said first interconnect level has a first opening proximate to said interlevel connector and disposed between two of said fingers for dividing current flow therebetween.
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Abstract
In a first approach, an interconnect structure (10) reduces peak localized interconnect current density by distributing current flow around the perimeter (22) of an interlevel connector (14) in a semiconductor device. A first interconnect level (12) is connected to a second interconnect level by the interlevel connector (14), and the perimeter (22) of the interlevel connector (14) is located at the juncture between the first interconnect level (12) and the interlevel connector (14). The first interconnect level (12) has two or more fingers (16,18,20) protruding therefrom that connect to the perimeter (22) of the interlevel connector (14). At least one opening (36,38) is disposed between two of the fingers (16,18,20) for dividing current flow. In a second approach, an interconnect level (50) is formed of a polycrystalline material and connects two points in the semiconductor device using essentially only a plurality of branches (52) each having a linewidth (W) less than the median grain size of the polycrystalline material. In a third approach, an interconnect run (60) consists essentially of a plurality of upper and lower straps (62,64) connected by a plurality of interlevel connectors (66) so that a chain is provided which connects substantially the full length between two points in the semiconductor device.
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Citations
9 Claims
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1. An interconnect structure for reducing peak localized interconnect current density by distributing current flow around a perimeter of an interlevel connector in a semiconductor device, comprising:
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a first interconnect level for connection to a second interconnect level by said interlevel connector, wherein said perimeter of said interlevel connector is disposed at a juncture between said first interconnect level and said interlevel connector; and at least two fingers protruding from said first interconnect level for connecting to said perimeter of said interlevel connector, wherein said first interconnect level has a first opening proximate to said interlevel connector and disposed between two of said fingers for dividing current flow therebetween. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An interconnect structure for reducing peak localized interconnect current density by distributing current flow around a perimeter of an interlevel connector in a semiconductor device, comprising:
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(a) a first interconnect level for connection to a second interconnect level by said interlevel connector, wherein said perimeter of said interlevel connector is disposed at a juncture between said first interconnect level and said interlevel connector; and (b) at least three fingers protruding from said first interconnect level for connecting to said perimeter of said interlevel connector, wherein; said first interconnect level has a first opening proximate to said interlevel connector and disposed between two of said fingers for dividing current flow therebetween and has a second opening proximate to said interlevel connector and disposed between two of said fingers for dividing current flow therebetween, one of said fingers disposed between said first opening and said second opening; said fingers, said first opening, and said second opening are patterned so that current density through each of said fingers in a region proximate to said interlevel connector is substantially equal; and each of said fingers has a longitudinal axis intersecting said interlevel connector and separated from each other longitudinal axis of said fingers by a radial rotation about a center of said interlevel connector of at least about 45 degrees. - View Dependent Claims (8, 9)
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Specification