Mechanical force sensing semiconductor device

• US 5,461,916 A
• Filed: 08/20/1993
• Issued: 10/31/1995
• Est. Priority Date: 08/21/1992
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Fujii, Tetsuo, Imai, Masahito
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Kwok, Helen C.
• Application Number:
  US08/109,504
• Time in Patent Office: 802 Days
• Field of Search: 73/505, 73/510, 73/517 R, 73/517 B, 73/517 AV, 364/553, 364/571.02
• US Class Current: 73/514.32
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 7/0006 Interconnects
• CPC Class Codes: C07C 303/32 of salts of sulfonic acids
• CPC Class Codes: C07C 303/44 Separation; Purification
• CPC Class Codes: C07C 309/17 containing carboxyl groups bound to the carbon skeleton
• CPC Class Codes: G01C 19/56 Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
• CPC Class Codes: G01C 19/5656 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0817 for pivoting movement of the mass, e.g. in-plane pendulum
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part

Abstract

A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static eletricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Claims

1. A semiconductor mechanical sensor comprising:

a semiconductor substrate;

a beam structure extending in spaced relation over said semiconductor substrate,

a weight formed at an end of said beam structure and including first and second surface areas, said weight being movable along a predetermined axial direction;

a first electrode formed on a surface of said semiconductor substrate and facing said first surface area on said weight;

a second electrode formed on another surface of said semiconductor substrate, said second electrode facing said second surface area formed on said weight and in a direction generally perpendicular to the direction in which said first electrode faces and perpendicular to said predetermined axial direction;

said first electrode and said first surface area adapted to have a continuous change in potential difference applied therebetween so that the weight oscillates in said predetermined axial direction, and

wherein movement of said weight produces a change in capacitance between said second surface area and said second electrode to enable said sensor to detect mechanical forces acting thereon.

2. A semiconductor mechanical sensor device, wherein a plurality of semiconductor mechanical sensors as defined by claim 1 are arranged monolithically.

3. A semiconductor mechanical sensor in accordance with claim 1, further comprising:

an AM modulation circuit for superimposing a signal from a physical force detect electrode on a carrier wave; and

a band pass filter for passing a signal from said AM modulation circuit whose center frequency coincides with said carrier wave.

4. A semiconductor mechanical sensor in accordance with claim 1, further comprising:

oscillation means connected with said first surface area on said weight for oscillating the weight in said axial direction;

an impedance converter connected with said first surface area on said weight for converting a change in impedance to a voltage;

inverting amplifier means for inversely amplifying an output signal output from said impedance converter;

clock signal generation means for generating clock signals indicative of sample-and-hold periods;

sample-and-hold means connected to said inverting amplifier means for recording a peak value of an output of said inverting amplifier means during each sample-and-hold period and calculating a difference between peak values in different sample-and-hold periods; and

amplifier means for amplifying signals representing said difference between peak values.

5. A semiconductor mechanical sensor in accordance with claim 1, which is adapted to be used as a yaw rate sensor.

6. A semiconductor mechanical sensor in accordance with claim 1, which is adapted to be used as an acceleration sensor.

7. A semiconductor mechanical sensor according to claim 1, further comprising another beam structure having a weight at an end thereof, said beam structures being oscillated in opposite phase relation with respect to one another.

8. A semiconductor mechanical sensor comprising:

a semiconductor substrate having a recess;

a beam structure disposed within said recess;

a weight disposed at an end of said beam structure and having a first electrode formed on a lower surface thereof;

a second electrode provided on a surface of said recess opposite to said lower surface of said weight, said second electrode being fixed to ground potential;

oscillation means for applying an alternating electrical current to said first electrode so as to oscillate said weight by static electricity;

a third electrode provided on a side wall portion of said semiconductor substrate and arranged opposite to a side surface of said weight, said side surface of said weight facing in a predetermined direction perpendicular to a direction along which said weight is oscillated; and

said weight and said third electrode having a capacitance therebetween that changes when a predetermined rotational force is applied to said weight relative to said predetermined direction, and wherein signals representing an amount of change in said capacitance are output from said third electrode.