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Semiconductor memory comprising a memory cell without a transistor

  • US 5,463,235 A
  • Filed: 07/25/1994
  • Issued: 10/31/1995
  • Est. Priority Date: 07/26/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor memory comprising a memory cell, said memory cell being free of transistors and comprising:

  • a laminated structure including a first word line, a first dielectric film having a first area and a first dielectric constant and disposed on said first word line, a bit line disposed on said first dielectric film, a second dielectric film having a second area and a second dielectric constant and disposed on said bit line, an information charge storage layer disposed on said second dielectric film, a third dielectric film having a third area and a third dielectric constant and disposed on said information charge storage layer, and a second word line disposed on said third dielectric film, wherein at least one of the second area and the second dielectric constant is smaller than the first area and the first dielectric constant, respectively, and the third area and the third dielectric constant, respectively.

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