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Large scale high density semiconductor apparatus

  • US 5,463,246 A
  • Filed: 05/03/1994
  • Issued: 10/31/1995
  • Est. Priority Date: 12/29/1988
  • Status: Expired due to Term
First Claim
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1. A method for forming a semiconductor apparatus, comprising the steps of:

  • (a) separately forming a plurality of electrically conductive interconnection films of a predetermined pattern on an electrically insulating circuit substrate;

    (b) bonding at least one semiconductor chip having a plurality of electrodes through an adhesive layer on said circuit substrate and said interconnection films;

    (c) forming a plurality of through holes in said semiconductor chip which pierce said semiconductor chip in the direction of thickness thereof; and

    (d) forming a plurality of electrically conductive bodies in each of said through holes respectively, each of said plurality of electrically conductive bodies electrically connecting a predetermined one of said electrodes of said semiconductor chip to a predetermined one of said interconnection films formed on said circuit substrate,wherein each of said plurality of electrically conductive bodies is electrically connected directly to said predetermined one of said interconnection films on the bottom plane of each of said through holes.

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