Voltage non-linear device and liquid crystal display device incorporating same

• US 5,464,990 A
• Filed: 09/24/1993
• Issued: 11/07/1995
• Est. Priority Date: 09/25/1992
• Status: Expired due to Term

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Yamaguchi, Yoshinori, Hayashi, Kazuhiro, Shiratsuki, Yoshiyuki, Niitsu, Takahiro
• Primary Examiner(s): Mintel, William
• Assistant Examiner(s): TRAN, MINH LOAN
• Application Number:
  US08/126,225
• Time in Patent Office: 774 Days
• Field of Search: 257/40, 257/43, 257/536, 257/537, 257/752, 257/759, 257/766, 359/57, 359/58, 359/60, 359/79
• US Class Current: 257/40
• CPC Class Codes: G02F 1/1365 in which the switching element is a two-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01C 7/112 ZnO type

Abstract

A voltage non-linear device comprises, on an insulating substrate, a bottom electrode film, a voltage non-linear film, and a top electrode film formed in this order, wherein the bottom electrode film, the voltage non-linear film and the top electrode film are, respectively, made of a metal or a metal oxide formed by applying a metallo-organic paste and sintering the thus applied paste. The voltage non-linear film is made of a metal oxide sintered from a mixture of a metallo-organic zn compound and a metallo-organic compound of at least one element selected from Bi, Mn, Co, Cr and Sb. A method for making the voltage non-linear device and metallo-organic compounds useful for the method are also described. Moreover, a liquid crystal display device using the voltage non-linear device and a method for making the display device are described.

Claims

1. A voltage non-linear device comprising:

an insulating substrate,

a bottom electrode film formed on the insulating substrate,

a voltage non-linear film formed on the bottom electrode film, and

a top electrode film formed on the voltage non-linear film,

wherein said bottom electrode film, said voltage non-linear film and said top electrode film are made of at least one of a metal and a metal oxide formed by applying a metallo-organic paste and sintering the thus applied paste, and

wherein said bottom electrode film has a double-layered structure comprising an upper layer and a lower layer, the upper layer being formed of material which depresses formation of projections on a surface facing the voltage non-linear film during formation of the bottom electrode film.

2. A voltage non-linear device according to claim 1,

wherein said voltage non-linear film comprises a sintered mixture of a metallo-organic zinc paste and a metallo-organic paste of at least one element selected from Bi, Mn, Co, Cr and Sb.

3. A voltage non-linear device according to claim 1,

wherein said voltage non-linear film comprises a sintered mixture of a metallo-organic zinc paste and a metallo-organic paste of at least one element selected from Bi, Mn, Co, Cr and Sb, the at least one element having an atomic ratio to Zn no larger than 30%.

4. A voltage non-linear device according to claim 1,

wherein the voltage non-linear film comprises a pair of semiconductor thin films formed on said bottom electrode;

and an insulating thin film layer provided between the pair of semiconductor thin films, and

wherein the pair of semiconductor thin films and said insulating thin film layer each comprises sintered metallo-organic paste.

5. A voltage non-linear device according to claim 1,

wherein the voltage non-linear film comprises a pair of semiconductor thin films formed on the bottom electrode;

and an insulating thin film layer provided between the pair of semiconductor thin films, and

wherein the pair of semiconductor thin films each comprises sintered metallo-organic paste having a Zn primary component.

6. A voltage non-linear device according to claim 1,

wherein the voltage non-linear film comprises a pair of semiconductor thin films formed on the bottom electrode;

and an insulating thin film layer provided between the pair of semiconductor thin films, and

wherein said insulating thin film layer comprises sintered metallo-organic paste of at least one element selected from Bi, Mn, Co, Cr and Sb.

7. A voltage non-linear device which comprises, on an insulating substrate, a bottom electrode, a voltage non-linear film, and a top electrode film formed in this order, wherein said bottom electrode has a structure comprising a metal electrode film formed by applying a metallo-organic paste and sintering the applied paste, and a metal oxide electrode film formed by applying a metallo-organic paste and sintering the applied paste.

8. A voltage non-linear device comprising:

an insulating substrate,

a bottom electrode film formed on the insulating substrate,

a voltage non-linear layer formed on the bottom electrode film and including a pair of semiconductor thin films and an insulating thin film layer provided between the paired semiconductor thin films, and

a top electrode film formed on the voltage non-linear layer,

wherein said bottom electrode film has a double-layered structure comprising an upper layer and a lower layer, the upper layer being formed of material which depresses formation of projections on a surface facing the voltage non-linear film during formation of the bottom electrode film.

9. A voltage non-linear device which comprises, on an insulating substrate, a bottom electrode, a voltage non-linear layer formed on the bottom electrode and including a pair of semiconductor thin films and an insulating thin film layer provided between the paired semiconductor thin films, and a top electrode film formed on the voltage non-linear layer, wherein said bottom electrode comprises a metal electrode film formed by applying a metallo-organic paste and sintering the applied paste, and a metal oxide electrode film formed by applying a metallo-organic paste and sintering the applied paste.

10. A liquid crystal display device comprising:

a first insulating substrate including a plurality of pixel electrodes, signal lines transmitting signals to individual pixel electrodes, and voltage non-linear devices each connecting the pixel electrode and the signal line;

a second insulating substrate having a segment electrode in face-to-face relation to the pixel electrodes of said first insulating substrate; and

a liquid crystal filled between the first and second insulating substrates, and

wherein said voltage non-linear devices each comprises;

a bottom electrode film formed on said first insulating substrate;

a voltage non-linear film formed on the bottom electrode film; and

a top electrode film formed on the voltage non-linear film,

wherein said bottom electrode film, said voltage non-linear film and said top electrode film are made of at least one of a metal and a metal oxide formed by applying a metallo-organic paste and sintering the thus applied paste,

wherein said bottom electrode film has a double-layered structure comprising an upper layer and a lower layer, the upper layer being formed of material which depresses formation of projections on a surface facing the voltage non-linear film during formation of the bottom electrode film.

11. A liquid crystal display device according to claim 10, wherein said voltage non-linear film comprises a pair of semiconductor thin film having an insulating thin film provided therebetween.

12. A liquid crystal display device according to claim 11, wherein the pair of semiconductor thin films are each made of a metal oxide formed by applying a metallo-organic paste comprising Zn as its major metal component and sintering the applied paste.

13. A liquid crystal display device according to claim 11, wherein said insulating thin film made of a metal oxide formed by applying a metallo-organic paste of at least one element selected from Bi, Si, Pb, Mn, Co, Cr, Sb, Ti and B and sintering the applied paste.