Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor

• US 5,465,185 A
• Filed: 10/15/1993
• Issued: 11/07/1995
• Est. Priority Date: 10/15/1993
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Heim, David E., Parkin, Stuart S. P.
• Primary Examiner(s): Levy, Stuart S.
• Assistant Examiner(s): Letscher, George J.
• Application Number:
  US08/139,477
• Time in Patent Office: 753 Days
• Field of Search: 360/113, 338/32 R, 338/32 H, 324/252, 324/207.21
• US Class Current: 360/324.11
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/0008 Magnetic conditionning of heads, e.g. biasing
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/399 with intrinsic biasing, e.g. provided by equipotential strips

Abstract

A spin valve magnetoresistive (MR) sensor uses a multifilm laminated pinned ferromagnetic layer in place of the conventional single-layer pinned layer. The laminated pinned layer has at least two ferromagnetic films separated by an antiferromagnetically coupling film. By appropriate selection of the thickness of the antiferromagnetically coupling film, depending on the material combination selected for the ferromagnetic and antiferromagnetically coupling films, the ferromagnetic films become antiferromagnetically coupled. In the preferred embodiment, the pinned layer is formed of two films of nickel-iron (Ni--Fe) separated by a ruthenium (Ru) film having a thickness less than approximately 10 Å. Since the pinned ferromagnetic films have their magnetic moments aligned antiparallel with one another, the two moments can be made to essentially cancel one another by making the two ferromagnetic films of substantially the same thickness. As a result, there is essentially no dipole field to adversely affect the free ferromagnetic layer, which improves the sensitivity of the sensor and allows higher recording density to be achieved in a magnetic recording data storage system.

Claims

1. A magnetoresistive sensor comprising:

a first layer and a second layer of ferromagnetic material separated by a spacer layer of nonmagnetic material, the magnetization direction of said first layer of ferromagnetic material being at an angle relative to the magnetization direction of said second layer of ferromagnetic material at zero applied magnetic field, the second layer of ferromagnetic material comprising first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films for coupling the first and second ferromagnetic films together antiferromagnetically so that their magnetizations are aligned antiparallel with one another and remain antiparallel in the presence of an applied magnetic field; and

means for maintaining the magnetization of one of the ferromagnetic films in the second ferromagnetic layer in a fixed direction in the presence of an applied magnetic field, whereby while the magnetization of the first layer is free to rotate in the presence of an applied magnetic field the magnetization directions of the first and second ferromagnetic films in the second layer remain fixed and antiparallel to one another.

2. A magnetoresistive sensor as in claim 1 wherein the antiferromagnetically coupling film in the second ferromagnetic layer consists essentially of Ru.

3. A magnetoresistive sensor as in claim 2 wherein the Ru film has a thickness in the range of approximately 3-6 Angstroms.

4. A magnetoresistive sensor as in claim 2 wherein the first and second ferromagnetic films in the second ferromagnetic layer consist essentially of Ni--Fe.

5. A magnetoresistive sensor as in claim 1 wherein the first and second ferromagnetic films in the second ferromagnetic layer consist essentially of Fe, and wherein the antiferromagnetically coupling film in the second ferromagnetic layer consists essentially of Cr.

6. A magnetoresistive sensor as in claim 1 wherein the first and second ferromagnetic films in the second ferromagnetic layer are made of a material selected from the group consisting of Co, Fe, Ni, and their alloys, and wherein the antiferromagnetically coupling film in the second ferromagnetic layer is made of a material selected from the group consisting of Ru, Cr, rhodium (Rh), iridium (Ir), and their alloys.

7. A magnetoresistive sensor as in claim 1 wherein the second ferromagnetic layer has essentially zero net magnetic moment.

8. A magnetoresistive sensor as in claim 1 wherein the first and second films in the second ferromagnetic layer have substantially the same thickness.

9. A magnetoresistive sensor as in claim 1 wherein the ferromagnetic film adjacent to the spacer layer is thinner than the other ferromagnetic film in the second ferromagnetic layer.

10. A magnetoresistive sensor as in claim 1 wherein the magnetization maintaining means comprises an exchange bias layer of antiferromagnetic material adjacent to and in contact with one of the ferromagnetic films in the second ferromagnetic layer.

11. A magnetoresistive sensor as in claim 10 wherein the antiferromagnetic layer comprises a material selected from the group consisting of iron-manganese and nickel-manganese.

12. A magnetoresistive sensor as in claim 1 wherein the nonmagnetic spacer layer comprises a material selected from the group consisting of silver, gold, copper, and alloys of silver, gold, and copper.

13. A spin valve magnetoresistive sensor comprising:

a substrate; and

a layered structure formed on the substrate, the layered structure comprising;

a free ferromagnetic layer having a preferred axis of magnetization in the absence of an applied magnetic field;

a nonmagnetic spacer layer adjacent to the free ferromagnetic layer;

a first pinned ferromagnetic film adjacent to the spacer layer and having an axis of magnetization at an angle to the magnetization axis of the free ferromagnetic layer;

a second pinned ferromagnetic film having a direction of magnetization generally antiparallel to the magnetization direction of the first pinned ferromagnetic film;

an antiferromagnetically coupling film located between and in contact with the first and second pinned ferromagnetic films for coupling the first and second pinned ferromagnetic films together antiferromagnetically so that their magnetizations are aligned antiparallel with one another and remain antiparallel in the presence of an applied magnetic field; and

an exchange bias layer of antiferromagnetic material adjacent to and in contact with the second pinned ferromagnetic film for pinning the magnetization of the second pinned ferromagnetic film in a fixed direction and thereby pinning the magnetization of the first pinned ferromagnetic film antiparallel to the magnetization of the second pinned ferromagnetic film to which it is antiferromagnetically coupled.

14. A spin valve magnetoresistive sensor as in claim 13 wherein the antiferromagnetically coupling film between the first and second pinned ferromagnetic films consists essentially of Ru.

15. A spin valve magnetoresistive sensor as in claim 14 wherein the Ru antiferromagnetically coupling film has a thickness in the range of approximately 3-6 Angstroms.

16. A spin valve magnetoresistive sensor as in claim 14 wherein the first and second pinned ferromagnetic films consist essentially of Ni--Fe.

17. A spin valve magnetoresistive sensor as in claim 13 wherein the first and second pinned ferromagnetic films consist essentially of Fe, and wherein the antiferromagnetically coupling film between the first and second pinned ferromagnetic films consists essentially of Cr.

18. A spin valve magnetoresistive sensor as in claim 13 wherein the first and second pinned ferromagnetic films are made of a material selected from the group consisting of Co, Fe, Ni, and their alloys, and wherein the antiferromagnetically coupling film is made of a material selected from the group consisting of Ru, Cr, rhodium (Rh), iridium (Ir), and their alloys.

19. A spin valve magnetoresistive sensor as in claim 13 wherein the first and second pinned ferromagnetic films have substantially the same thickness.

20. A spin valve magnetoresistive sensor as in claim 13 wherein the antiferromagnetically coupled first and second pinned ferromagnetic films have essentially zero net magnetic moment.

21. A spin valve magnetoresistive sensor as in claim 13 wherein the second pinned ferromagnetic film adjacent to the exchange bias layer is thicker than the first pinned ferromagnetic film.

22. A spin valve magnetoresistive sensor as in claim 13 wherein the exchange bias layer of antiferromagnetic material consists of a material selected from the group consisting of iron-manganese and nickel-manganese.

23. A spin valve magnetoresistive sensor as in claim 13 wherein the nonmagnetic spacer layer between the free ferromagnetic layer and the first pinned ferromagnetic film comprises a material selected from the group consisting of silver, gold, copper, and alloys of silver, gold, and copper.

24. A spin valve magnetoresistive sensor as in claim 13 wherein the first pinned ferromagnetic film includes a thin film of Co adjacent to the spacer layer.

25. A magnetic storage system comprising:

a magnetic storage medium having a plurality of tracks for the recording of data;

a magnetic transducer maintained close to the magnetic storage medium during relative motion between the magnetic transducer and the magnetic storage medium, the magnetic transducer including a magnetoresistive sensor comprising;

a first layer and a second layer of ferromagnetic material separated by a spacer layer of nonmagnetic material, the magnetization direction of the first layer of ferromagnetic material being at an angle relative to the magnetization direction of the second layer of ferromagnetic material at zero applied magnetic field, the second layer of ferromagnetic material comprising first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films for coupling the first and second ferromagnetic films together antiferromagnetically so that their magnetizations are aligned antiparallel with one another and remain antiparallel in the presence of an applied magnetic field; and

means for maintaining the magnetization of one of the ferromagnetic films in the second ferromagnetic layer in a fixed direction in the presence of an applied magnetic field, whereby while the magnetization of the first layer is free to rotate in the presence of an applied magnetic field the magnetization directions of the first and second ferromagnetic films in the second layer remain fixed and antiparallel to one another; and

means coupled to the magnetoresistive sensor for detecting resistance changes in the magnetoresistive sensor responsive to magnetic fields representative of data bits recorded in the magnetic storage medium intercepted by the magnetoresistive sensor.

26. A system as in claim 25 wherein the antiferromagnetically coupling film between the first and second ferromagnetic films in the second ferromagnetic layer consists essentially of Ru.

27. A system as in claim 26 wherein the Ru antiferromagnetically coupling film has a thickness in the range of approximately 3-6 Angstroms.

28. A system as in claim 25 wherein the first and second ferromagnetic films in the second ferromagnetic layer consist essentially of Ni--Fe.

29. A system as in claim 25 wherein the first and second ferromagnetic films in the second ferromagnetic layer consist essentially of Fe, and wherein the antiferromagnetically coupling film between the first and second ferromagnetic films consists essentially of Cr.

30. A system as in claim 25 wherein the first and second ferromagnetic films in the second ferromagnetic layer are made of a material selected from the group consisting of Co, Fe, Ni, and their alloys, and wherein the antiferromagnetically coupling film is made of a material selected from the group consisting of Ru, Cr, rhodium (Rh), iridium (Ir), and their alloys.

31. A system as in claim 25 wherein the first and second ferromagnetic films in the second ferromagnetic layer have substantially the same thickness.

32. A system as in claim 25 wherein the antiferromagnetically coupled first and second ferromagnetic films have essentially zero net magnetic moment.

33. A system as in claim 25 wherein the nonmagnetic spacer layer between the free ferromagnetic layer and the adjacent pinned ferromagnetic film comprises a material selected from the group consisting of silver, gold, copper, and alloys of silver, gold, and copper.

34. A system as in claim 25 wherein the means for maintaining the magnetization of one of the ferromagnetic films in the second ferromagnetic layer in a desired direction comprises an exchange bias layer of antiferromagnetic material adjacent to and in contact with the second ferromagnetic film, the antiferromagnetic layer providing a bias field in the second ferromagnetic film for maintaining the magnetization in the second ferromagnetic film and the antiferromagnetically coupled first ferromagnetic film in a desired direction.

35. A system as in claim 34 wherein the exchange bias layer of antiferromagnetic material consists of a material selected from the group consisting of iron-manganese and nickel-manganese.

36. A magnetic recording disk drive comprising:

a magnetic recording disk;

a motor connected to the disk for rotating the disk;

a spin valve magnetoresistive sensor for sensing magnetically recorded data on the disk, the sensor comprising;

a free ferromagnetic layer having a preferred axis of magnetization in the absence of an applied magnetic field;

a nonmagnetic spacer layer adjacent to the free ferromagnetic layer;

a first pinned ferromagnetic film adjacent to the spacer layer and having an axis of magnetization generally perpendicular to the magnetization axis of the free ferromagnetic layer;

a second pinned ferromagnetic film having a direction of magnetization generally antiparallel to the magnetization direction of the first pinned ferromagnetic film;

an antiferromagnetically coupling film located between and in contact with the first and second pinned ferromagnetic films for coupling the first and second pinned ferromagnetic films together antiferromagnetically so that their magnetizations are aligned antiparallel with one another and remain antiparallel in the presence of an applied magnetic field; and

an exchange bias layer of antiferromagnetic material adjacent to and in contact with the second pinned ferromagnetic film for pinning the magnetization of the second pinned ferromagnetic film in a fixed direction and thereby pinning the magnetization of the first pinned ferromagnetic film antiparallel to the magnetization of the second pinned ferromagnetic film to which it is antiferromagnetically coupled;

a carrier supporting the spin valve magnetoresistive sensor, the carrier having a substrate onto which the sensor is attached;

an actuator for moving the carrier generally radially across the disk so the sensor may access different regions of magnetically recorded data on the disk;

means connecting the carrier to the actuator for maintaining the carrier near the disk;

means electrically coupled to the sensor for detecting changes in resistance of the sensor caused by rotation of the magnetization axis of the free ferromagnetic layer relative to the fixed, generally perpendicularly oriented magnetizations of the antiferromagnetically coupled first and second pinned ferromagnetic films in response to magnetic fields from the magnetically recorded disk; and

means for supporting the motor and actuator.

37. A disk drive according to claim 36 wherein the antiferromagnetically coupling film between the first and second pinned ferromagnetic films in the spin valve magnetoresistive sensor consists essentially of Ru.

38. A disk drive according to claim 37 wherein the Ru antiferromagnetically coupling film has a thickness in the range of approximately 3-6 Angstroms.

39. A disk drive according to claim 36 wherein the first and second pinned ferromagnetic films in the spin valve magnetoresistive sensor consist essentially of Ni--Fe.

40. A disk drive as in claim 36 wherein the first and second pinned ferromagnetic films consist essentially of Fe, and wherein the antiferromagnetically coupling film between the first and second pinned ferromagnetic films consists essentially of Cr.

41. A disk drive as in claim 36 wherein the first and second pinned ferromagnetic films are made of a material selected from the group consisting of Co, Fe, Ni, and their alloys, and wherein the antiferromagnetically coupling film is made of a material selected from the group consisting of Ru, Cr, rhodium (Rh), iridium (Ir), and their alloys.

42. A disk drive as in claim 36 wherein the first and second pinned ferromagnetic films have substantially the same thickness.

43. A disk drive as in claim 36 wherein the antiferromagnetically coupled first and second ferromagnetic films have essentially zero net magnetic moment.

44. A disk drive as in claim 36 wherein the nonmagnetic spacer layer comprises a material selected from the group consisting of silver, gold, copper, and alloys of silver, gold, and copper.

45. A disk drive sensor as in claim 36 wherein the first pinned ferromagnetic film includes a thin film of Co adjacent to the spacer layer.

46. A disk drive as in claim 36 wherein the exchange bias layer of antiferromagnetic material consists of a material selected from the group consisting of iron-manganese and nickel-manganese.