Method for producing semiconductor articles
First Claim
1. A method for producing a semiconductor article, comprising, in sequence, the steps of:
- (i) preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region;
(ii) forming unevenness on the surface at the side of said semiconductor layer of said first substrate;
(iii) bonding the surface of said first substrate having said unevenness formed thereon to the surface of a second substrate so as to be in contact with each other; and
(iv) removing said porous semiconductor such that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
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Abstract
A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
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Citations
52 Claims
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1. A method for producing a semiconductor article, comprising, in sequence, the steps of:
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(i) preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; (ii) forming unevenness on the surface at the side of said semiconductor layer of said first substrate; (iii) bonding the surface of said first substrate having said unevenness formed thereon to the surface of a second substrate so as to be in contact with each other; and (iv) removing said porous semiconductor such that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for producing a semiconductor article, comprising the steps of:
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preparing a substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer to the surface of an insulating substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said insulating substrate to thereby transfer said semiconductor layer to said insulating substrate from said substrate; separating said transferred semiconductor layer into island regions; and heat treating said semiconductor layer separated into island regions on said insulating substrate. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 51, 52)
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39. A method for producing a semiconductor article, comprising the steps of:
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preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; separating said semiconductor layer into a plurality of island regions isolated with a dielectric region; bonding the surface at the side of said plurality of island regions of said first substrate to the surface of a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said plurality of island regions are bonded to said second substrate to thereby transfer said plurality of island regions onto said second substrate. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. A method for producing a semiconductor article, comprising the steps of:
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preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region; bonding the surface at the side of said semiconductor layer of said first substrate to a second substrate so as to be in contact with each other; removing said porous semiconductor region under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer onto said second substrate from said first substrate; and separating said semiconductor layer into a plurality of island regions before or after said step of bonding.
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Specification