Method for producing semiconductor articles

• US 5,466,631 A
• Filed: 02/23/1995
• Issued: 11/14/1995
• Est. Priority Date: 10/11/1991
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Naruse, Yasuhiro, Sakamoto, Masaru, Sakaguchi, Kiyofumi, Nakayama, Jun, Ichikawa, Takeshi, Yonehara, Takao, Yamagata, Kenji
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US08/392,685
• Time in Patent Office: 264 Days
• Field of Search: 437/62, 437/170, 437/966, 148/DIG. 12, 148/DIG. 85, 148/DIG. 86
• US Class Current: 438/406
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76275 Vertical isolation by bonding techniques
• CPC Class Codes: H01L 21/76283 Lateral isolation by refilling of trenches with dielectric material
• CPC Class Codes: H01L 21/76289 Lateral isolation by air gap
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 438/96 Porous semiconductor
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.

Claims

1. A method for producing a semiconductor article, comprising, in sequence, the steps of:

(i) preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region;

(ii) forming unevenness on the surface at the side of said semiconductor layer of said first substrate;

(iii) bonding the surface of said first substrate having said unevenness formed thereon to the surface of a second substrate so as to be in contact with each other; and

(iv) removing said porous semiconductor such that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.

2. The method according to claim 1, wherein said first substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous region.

3. The method according to claim 1, wherein said first substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.

4. The method according to claim 1, wherein said first substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into a porous member.

5. The method according to claim 1, wherein said first substrate has an insulating layer on the surface side of said semiconductor layer.

6. The method according to claim 1, wherein said second substrate has an insulating surface.

7. The method according to claim 1, wherein said second substrate has an insulating film provided thereon.

8. The method according to claim 1, wherein said second substrate is light-transmissive.

9. The method according to claim 1, wherein the step of removing said porous semiconductor is carried out by wet etching.

10. The method according to claim 1, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.

11. The method according to any one of claims 1-10, wherein said semiconductor layer comprises silicon.

12. The method according to any one of claims 1-6 and 8-10, wherein said second substrate is made of quartz or glass.

13. The method according to any one of claims 1-6 and 8-10, wherein said semiconductor layer of said first substrate is made of silicon and said second substrate is made of quartz or glass.

14. The method according to any one of claims 1-7, 9, and 10, wherein said semiconductor layer of said first substrate is made of silicon, and said second substrate has an insulating layer formed on a silicon substrate.

15. The method according to any one of claims 1-10, wherein said porous semiconductor region is formed by anodization using a hydrofluoric acid solution.

16. The method according to any one of claims 1-10, wherein said semiconductor layer is a monocrystalline semiconductor formed by epitaxial growth.

17. The method according to any one of claims 1-10, wherein said semiconductor layer is a monocrystalline semiconductor as epitaxially grown by a method-selected from bias sputtering, molecular beam epitaxy, plasma-assisted CVD, photo-assisted CVD, and liquid phase epitaxy.

18. The method according to any one of claims 1-10, wherein the thickness of said semiconductor layer is not more than 100 μ

m.

19. The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region.

20. The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region, and the step of removing said porous semiconductor region includes the steps of polishing said underlying region until said groove is reached and then performing wet etching.

21. The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer and through said porous semiconductor region to reach an underlying region, and the step of removing said porous semiconductor includes the steps of covering the back surface of said second substrate with an etching preventing film and then performing wet etching.

22. The method according to any one of claims 1-10, wherein said unevenness includes a groove formed through said semiconductor layer to reach at least a portion of said porous semiconductor region.

23. The method according to any one of claims 1-10, wherein said unevenness is formed with an insulating layer formed in a selected pattern on said semiconductor layer.

24. The method according to any one of claims, 1-10, wherein the step of bonding is carried out after steps of providing an insulating layer of a selected pattern on said semiconductor layer, forming said unevenness and then converting the exposed portion of said semiconductor layer thorough said insulating layer into an insulating material.

25. The method according to any one of claims 1-10, wherein said semiconductor layer comprises a plurality of island portions separated from each other.

26. The method according to any one of claims 1-10, further comprising the step of forming a semiconductor element using said transferred semiconductor layer.

27. A method for producing a semiconductor article, comprising the steps of:

preparing a substrate having a non-porous semiconductor layer on a porous semiconductor region;

bonding the surface at the side of said semiconductor layer to the surface of an insulating substrate so as to be in contact with each other;

removing said porous semiconductor region under the state that said semiconductor layer is bonded to said insulating substrate to thereby transfer said semiconductor layer to said insulating substrate from said substrate;

separating said transferred semiconductor layer into island regions; and

heat treating said semiconductor layer separated into island regions on said insulating substrate.

28. The method according to claim 27, wherein said step of bonding includes a step of heat treatment at a temperature not higher than 600°

C.

29. The method according to claim 27, wherein said substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous region.

30. The method according to claim 27, wherein said substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.

31. The method according to claim 27, wherein said substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into the porous region.

32. The method according to claim 27, wherein said substrate has an insulating layer on the surface side of said semiconductor layer.

33. The method according to claim 27, wherein said insulating substrate is light-transmissive.

34. The method according to claim 27, wherein the step of removing said porous semiconductor is carried out by wet etching.

35. The method according to claim 27, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.

36. The method according to claim 27, wherein said semiconductor layer of said substrate is made of silicon and said second substrate is made of quartz or glass.

37. The method according to claim 27, wherein the thickness of said semiconductor layer is not more than 2 μ

m.

38. The method according to claim 27, further comprising the step of forming a semiconductor element in said island regions.

51. The method according to claim 28, wherein the temperature in said heat treating step is higher than that in the heat treatment in said bonding step.

52. The method according to claim 51, wherein the temperature in said heat treating step is 800°

C. or higher.

39. A method for producing a semiconductor article, comprising the steps of:

preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region;

separating said semiconductor layer into a plurality of island regions isolated with a dielectric region;

bonding the surface at the side of said plurality of island regions of said first substrate to the surface of a second substrate so as to be in contact with each other;

removing said porous semiconductor region under the state that said plurality of island regions are bonded to said second substrate to thereby transfer said plurality of island regions onto said second substrate.

40. The method according to claim 39, wherein said first substrate is prepared by converting a portion at the surface side of a substrate comprising the semiconductor into the porous region and then forming a monocrystalline semiconductor layer on the surface of said porous member.

41. The method according to claim 39, wherein said first substrate is prepared by forming a monocrystalline semiconductor layer on a substrate of porous semiconductor.

42. The method according to claim 39, wherein said first substrate is prepared by converting the portion other than the surface-side portion of a substrate of monocrystalline semiconductor into a porous member.

43. The method according to claim 39, wherein said first substrate has an insulating layer on the surface side of said semiconductor layer.

44. The method according to claim 39, wherein said second substrate has an insulating surface.

45. The method according to claim 39, wherein said second substrate has an insulating film provided thereon.

46. The method according to claim 39, wherein said second substrate is light-transmissive.

47. The method according to claim 39, wherein the step of removing said porous semiconductor is carried out by wet etching.

48. The method according to claim 39, wherein the step of removing said porous semiconductor includes a mechanical polishing step and a wet etching step.

49. The method according to claim 39, further comprising the step of forming a semiconductor element in said plurality of island regions.

50. A method for producing a semiconductor article, comprising the steps of:

preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region;

bonding the surface at the side of said semiconductor layer of said first substrate to a second substrate so as to be in contact with each other;

removing said porous semiconductor region under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer onto said second substrate from said first substrate; and

separating said semiconductor layer into a plurality of island regions before or after said step of bonding.