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Silicon oxide germanium resonant tunneling

  • US 5,466,949 A
  • Filed: 08/04/1994
  • Issued: 11/14/1995
  • Est. Priority Date: 08/04/1994
  • Status: Expired due to Fees
First Claim
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1. A resonant tunneling diode, comprising:

  • (a) first and second tunneling barriers, said first tunneling barrier including a silicon-oxygen compound;

    (b) a quantum well between said first and second tunneling barriers, said quantum well including germanium;

    (c) a first terminal abutting said first tunneling barrier; and

    (d) a second terminal abutting said second tunneling barrier.

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