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Method of using source bias to increase threshold voltages and/or to correct for over-erasure of flash eproms

  • US 5,467,306 A
  • Filed: 10/04/1993
  • Issued: 11/14/1995
  • Est. Priority Date: 10/04/1993
  • Status: Expired due to Term
First Claim
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1. A method for increasing the threshold voltage of at least one of a plurality of floating-gate memory cells in a nonvolatile integrated-circuit memory having a substrate connected to a reference voltage each said memory cells being of the single-transistor, non-split-gate type, said method comprising:

  • causing the voltage on the control gates of said plurality of memory cells to have a positive value with respect to said reference voltage;

    causing the voltage on the sources of said plurality of memory cells to have a positive value with respect to said reference voltage; and

    causing a current to flow into the drains of said plurality of memory cells;

    said voltage on the control gates having a value less than the typical threshold voltage of said plurality of cells with said voltage on said sources of said plurality of cells.

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