Plasma etch process

• US 5,468,339 A
• Filed: 10/09/1992
• Issued: 11/21/1995
• Est. Priority Date: 10/09/1992
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Gupta, Subhash, Chen, Susan H.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US07/960,499
• Time in Patent Office: 1,138 Days
• Field of Search: 156/643, 156/646, 156/656, 156/657, 156/644, 437/192, 437/228
• US Class Current: 216/67
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76805 the opening being a via or contact hole penetrating the underlying conductor

Abstract

An improved SiO_x etch which employs CHF₃, N₂ and a light mass cooling gas in total pressure on the order of 3000 mT in a confined plasma reactor. High aspect ratios at least 10:1 are obtainable.

Claims

1. In a method for plasma etching a SiO_x material comprising

(a) establishing a plasma in a vacuum container in a confined region between two closely displaced planar electrodes by providing a flow of reactive gases to said confined region and RF power at a frequency on the order of 400 KHz across said electrodes,

(b) fastening said SiO_x material to be etched to one of said electrodes,

The Improvement Comprising,said reaction gases including CHF₃,

cooling said plasma by inelastic collisions, andselecting the said flow of gases to obtain a total chamber pressure, p, where 10.0 Torr>

p>

1.5 Torr wherein said step of cooling includes causing a high volume flow rate of light mass gas to be included in said reaction gases, which flow rate of said light mass gas is approximately 50-100 times greater than the flow rate of CHF₃, wherein said light mass gas comprises Helium.

2. The method of claim 1 wherein said reaction gases further includes N₂ gas flow.

3. The method of claim 2 wherein the rate of etch of said SiO_x is regulated by regulating said N₂ gas flow rate.

4. The method of claim 2, wherein the rate of etch of said SiO_x is regulated by regulating said N₂ gas flow rate in the region of 40-400 percent of the CHF₃ flow rate.

5. The method of claim 2, wherein the flow rate of CHF₃ and N₂ are of the same order and the flow rate of light mass cooling gas is on the order of 50-100 times greater than either CHF₃ or N₂ volume flow rate.

6. The method of claim 5, wherein the wafer to be etched is also coated with a TiN layer prior to being etched, and wherein said etch selectively etches said silicon and silicon compounds at a rate much faster than said TiN is etched by said plasma.

7. The method of claim 6 wherein the SiO_x to TiN etch rate selectivity is on order of 20/1.

8. The method of claim 2 wherein the etch products produced by said plasma reaction with said silicon compounds are substantially entirely volatile for a time sufficient to permit said etch products to be removed from said vacuum container before redeposition.

9. The method of claim 6 wherein said TiN is a stop layer such that clean walled high aspect ratio shallow holes can be simultaneously etched in said wafer as deep holes, where said deep holes can be on the order of three times deeper than the shallow holes.

10. In a method for producing interlayer metal interconnects in an integrated circuit having metal interconnect strips thereon, comprising:

(a) applying a TiN layer over the top of said metal interconnect strips;

(b) applying a dielectric fill over said TiN coated metal interconnect strips;

(c) planarizing the top of said dielectric fill;

(d) applying and patterning a resist mask over the top of said metal interconnect strips;

(e) placing said patterned wafer into a confined plasma etch reactor and fastening said wafer onto an electrode of said reactor;

(f) introducing reaction gases, said reaction gases comprising CHF₃, N₂ and a light mass cooling gas into said confined plasma etch reactor;

(g) exciting said plasma by applying RF energy at approximately 400 KHz, wherein the said light mass cooling gas composes He and the He volume flow is 50 -100 times greater than the volume flow rate of either CHF₃ or N₂ and the total flow is adjusted to establish a high pressure p where 10.0 Torr>

p>

1.5 Torr.

11. The method of claim 10 wherein said layer of TiN is on the order of 1000Å

.

12. The method of claim 11 including a further step (h), said step (h) comprising filling said VIA holes with a Ti or Ti/TiN and a tungsten plug, said plug having a resistance on the order of 1.2 ohms for a 0.8 micron diameter VIA plug.