Method of forming patterned polyimide films

• US 5,470,693 A
• Filed: 02/18/1992
• Issued: 11/28/1995
• Est. Priority Date: 02/18/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Sachdev, Krishna G., Ahmad, Umar M., Whitaker, Joel R.
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US07/837,505
• Time in Patent Office: 1,379 Days
• Field of Search: 430/311, 430/315, 430/317, 430/324, 430/327, 430/329, 430/330, 430/396
• US Class Current: 430/315
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76804 by forming tapered via holes

Abstract

A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

Claims

1. A method of producing patterned low thermal coefficient of expansion polyimide films, comprising the steps of:

applying a polyamic acid precursor layer onto a substrate wherein said polyamic acid precursor in said layer is capable of imidizing to form a polyimide which has a thermal coefficient of expansion approximately equal to said substrate and is selected from the group consisting of 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic dianhydride-p-phenylenediamine, 3,3,4,4'"'"'-biphenyltetracarboxylic dianhydride-benzidine, pyromellitic dianhydride-p-phenylenediamine, pyromellitic dianhydride-benzidine, and 3,3'"'"'4,4'"'"'-benzophenone tetracarboxylic acid dianhydride-p-phenylenediamine;

partially baking said polyamic acid precursor layer to a point where a significant amount of casting solvent in said polyamic acid precursor layer has been removed but wherein said polyamic acid precursor layer is still subject to development;

applying a positive photoresist on said polyamic acid precursor layer;

imagewise exposing said positive photoresist to radiation through a mask;

developing said positive photoresist with a first developer which is more active for said positive photoresist than for said polyamic acid precursor layer to yield a structure comprised of a patterned photoresist, a polyamic acid precursor layer and a substrate, said step of developing is performed under conditions where said polyamic acid precursor layer is not etched with said first developer, said first developer being an aqueous developer;

immersing said substrate in a second developer which is more active for said polyamic acid precursor layer than for said positive photoresist, said second developer being an aqueous developer;

removing polyamic acid precursor material exposed to said second developer to produce a patterned polyamic acid precursor layer; and

curing said patterned polyamic acid precursor layer to yield a patterned polyimide which has a low thermal coefficient of expansion.

2. A method as recited in claim 1 wherein said first developer used in said developing step is potassium hydroxide.

3. A method as recited in claim 1 wherein said second developer used in said immersing step is tetramethylammoniumhydroxide.

4. A method as recited in claim 1 wherein said step of removing said polyamic precursor material exposed to said second developer includes spray treatment with a solvent.

5. A method as recited in claim 1 wherein said step of removing said polyamic precursor material exposed to said second developer includes mechanical agitation in a solvent.

6. A method as recited in claim 1 wherein said step of removing said polyamic acid precursor material exposed to said second developer is accomplished with a solvent selected from the group consisting of methanol, aqueous methanol, ethanol, aqueous ethanol and aqueous propylene glycol.

7. A method as recited in claim 1 wherein said step of curing is performed according to a prescribed time/temperature heating cycle.

8. A method as recited in claim 7 wherein said time/temperature heating cycle is about 85°

C. for thirty minutes, between about 140°

-150°

C. for about forty five minutes, then about 230°

-250°

C. for thirty minutes, then about 300°

C. for thirty minutes, and then about 350°

-400°

C. for sixty minutes.

9. A method as recited in claim 1 wherein said substrate includes a silicon device or a ceramic with a polyimide insulator layer having metal circuitry and said step of applying further comprises the steps of activating a surface of said substrate and treating said surface with an adhesion promoter prior to applying said polyamic acid precursor layer.

10. A method as recited in claim 1 further comprising the step of depositing metal in said patterned polyimide.

11. A method of generating polyimide patterns comprising the steps of:

applying a layer of a polyamic acid precursor of a thermally stable polyimide onto a substrate;

baking said polyamic acid precursor on said substrate at about 100°

-130°

C. for 15-65 minutes;

applying a layer of a positive photoresist onto said polyamic acid precursor;

forming a photoresist pattern and a polyimide pattern comprising the steps of imagewise exposing said positive photoresist to radiation, developing said positive photoresist in aqueous potassium hydroxide developer to generate exposed portions of said polyamic acid precursor under conditions where said polyamic acid precursor is not etched, treating said exposed portions with aqueous tetramethylammoniumhydroxide, rinsing with alcohol or aqueous alcohol to completely remove said exposed portions, and removing said positive photoresist with an organic solvent, and curing said polyamic acid precursor at temperatures up to 300°

-400°

C.

12. A method as recited in claim 11 wherein said substrate is selected to be any semiconductor device or metallized ceramic substrate, or ceramic substrate with a polyimide thin film structure having metallurgical circuits.

13. A method as recited in claim 11 wherein said step of forming a photoresist pattern includes after the step of rinsing with alcohol or aqueous alcohol to completely remove said exposed portions, the step of treating said exposed portions with a dilute solution of acetic acid followed by a water rinse.

14. A method as recited in claim 11, further comprising the step of deriving said polyamic acid precursor from flexible chain monomers.

15. A method of generating polyimide patterns, comprising the steps of:

applying a layer of a polyamic acid precursor of a thermally stable polyimide onto a substrate wherein said polyamic acid precursor is selected to have a low in-plane thermal coefficient of expansion in a range of 3-20 ppm/°

C. at 100°

C.;

baking said polyamic acid precursor on said substrate at about 100°

-130°

C. for 15-65 minutes;

applying a layer of a positive resist onto said polyamic acid precursor;

forming a photoresist pattern and a polyimide. pattern comprising the steps of imagewise exposing said positive photoresist to radiation, developing said positive photoresist in aqueous potassium hydroxide developer to generate exposed portions of said polyamic acid precursor under conditions where said polyamic acid precursor is not etched, treating said exposed portions with aqueous tetramethylammoniumhydroxide, rinsing with alcohol or aqueous alcohol to completely remove said exposed portions, and removing said positive photoresist with an organic solvent, and curing said polyamic acid precursor at temperatures up to 300°

-400°

C.

16. A method of generating polyimide patterns, comprising the steps of:

applying a layer of a polyamic acid precursor of a thermally stable polyimide onto a substrate wherein said polyamic acid precursor is selected to be a condensation polymer derived from 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic aicd dianhydride-p-phenylenediamine and the corresponding polyimide derived therefrom having an in-plane thermal coefficient of expansion of 5-6 ppm/°

C. at 100°

C., elastic modulus of 8.7-9.8 GPa, elongation-at-break of 45-50%, and ultimate tensile strength of 450-550 MPa;

baking said polyamic acid precursor on said substrate at about 100°

-130°

C. for 15-65 minutes;

applying a layer of a positive resist onto said polyamic acid precursor;

forming a photoresist pattern and a polyimide pattern comprising the steps of imagewise exposing said positive photoresist to radiation, developing said positive photoresist in aqueous potassium hydroxide developer to generate exposed portions of said polyamic acid precursor under conditions where said polyamic acid precursor is not etched, treating said exposed portions with aqueous tetramethylammoniumhydroxide, rinsing with alcohol or aqueous alcohol to completely remove said exposed portions, and removing said positive photoresist with an organic solvent, and curing said polyamic acid precursor at temperatures up to 300°

-400°

C.

17. A method of generating polyimide patterns, comprising the steps of:

applying a layer of a polyamic acid precursor of a thermally stable polyimide onto a substrate wherein said polyamic acid precursor is selected to be a condensation polymer derived from a reaction of 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride and p-phenylenediamine in N-methylpyrrolidone and having an intrinsic viscosity of 1.05-1.55 dl/gram, molecular weight of 25,000-35,000, solution viscosity of 2300-10000 centistokes and solids content of 10.5-15.5%;

baking said polyamic acid precursor on said substrate at about 100°

-130°

C. for 15-65 minutes;

applying a layer of a positive resist onto said polyamic acid precursor;

forming a photoresist pattern and a polyimide pattern comprising the steps of imagewise exposing said positive photoresist to radiation, developing said positive photoresist in aqueous potassium hydroxide developer to generate exposed portions of said polyamic acid precursor under conditions where said polyamic acid precursor is not etched, treating said exposed portions with aqueous tetramethylammoniumhydroxide, rinsing with alcohol or aqueous alcohol to completely remove said exposed portions, and removing said positive photoresist with an organic solvent, and curing said polyamic acid precursor at temperatures up to 300°

-400°

C.

18. A method of patterning 3,3'"'"'4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid precursor and forming metallurgical circuits therein comprising the steps of:

O₂ plasma cleaning a substrate comprised of a silicon wafer or ceramic substrate;

treating said substrate with gamma-aminopropyltriethoxysilane as an adhesion promoter used as a 0.1% solution in water or a 95% ethanol 5% water mixture;

applying a coating of a 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition to said substrate by spin or spray coating;

forming a patterned polyimide layer by baking said 3,3'"'"'4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition at about 100°

-130°

C. for approximately 15-65 minutes, applying a positive photoresist, prebaking at about 85°

-90°

C. for approximately 2-15 minutes, imagewise exposing said positive photoresist using an optical exposure source, developing in a potassium hydroxide developer under conditions where said coating of said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is not etched, rinsing with water and blow drying, treating with aqueous tetramethylammoniumhydroxide, 0.05-0.25N, for 20-60 seconds without attack on said positive photoresist, rinsing with methanol or aqueous methanol with agitation or by spray technique until the exposed polyamic acid areas are completely removed, removing said positive photoresist by acetone spray rinse and blow drying, and thermally curing said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition according to a thermal cycle comprising about 85°

C. for approximately 30 minutes, about 140°

-150°

C. for approximately 45 minutes, about 230°

-250°

C. for approximately 30 minutes, about 300°

C. for approximately 30 minutes, and about 350°

-400°

C. for approximately 60 minutes;

depositing a thin conformal layer of chromium by blanket sputtering over said patterned polyimide layer;

depositing a copper seed layer and copper plate-up or depositing an entire copper conductor layer by sputtering or evaporation corresponding to a thickness of said patterned polyimide layer; and

chemical-mechanical polishing to obtain a planarized structure whereby a metallurgical pattern is embedded in and co-planar with said patterned polyimide layer.

19. The method of claim 18 wherein said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is baked at about 110°

C. for approximately 15-30 minutes when said coating is less then 5 μ

m thick.

20. A method as recited in claim 18 wherein said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is baked at about 110°

-130°

C. for approximately 30-50 minutes when said coating is 8-15 μ

m thick.

21. A method as recited in claim 18 wherein after said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is baked and said positive photoresist is applied, said positive photoresist is prebaked in an oven at about 85°

C. for approximately 15 minutes or on a hotplate at about 90°

C. for approximately 2-5 minutes.

22. A method of forming a second level of polyimide patterns on a structure having a set of first metallized circuits with a polyimide insulator on silicon or ceramic substrate, comprising the steps of:

oxygen reactive ion etching said structure;

applying an adhesion promoter on said structure;

applying a 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition on said structure;

forming a patterned polyimide layer on said structure by baking said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylene diamine polyamic acid composition on said structure;

forming a patterned polyimide layer on said structure by baking said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition at about 100°

-130°

C. for approximately 15-65 minutes, applying a positive photoresist, prebaking at about 85°

-90°

C. for approximately 2-15 minutes, imagewise exposing said positive photoresist using an optical exposure source, developing in a potassium hydroxide developer under conditions where said 3,3'"'"'4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is not etched, rinsing with water and blow drying, treating with aqueous tetramethylammoniumhydroxide having a normality ranging from 0.04N to 0.25N for 20-60 seconds without attack on said positive photoresist, rinsing with methanol or aqueous methanol with agitation or by spray technique unil the exposed polyamic acid areas are completely removed, removing said photoresist by acetone spray rinse and blow drying, and thermally curing said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition according to a thermal cycle comprising about 85°

C. for approximately 30 minutes, about 140°

-150°

C. for approximately 45 minutes, about 230°

-250°

C. for approximately 30 minutes, about 300°

C. for approximately 30 minutes, and about 350°

-400°

C. for approximately 60 minutes;

depositing a thin conformal layer of chromium by blanket sputtering over said patterned polyimide layer;

depositing a copper seed layer and copper plate-up or depositing an entier copper conductor layer by sputtering or evaporation corresponding to a thickness of said patterned polyimide layer; and

chemical-mechanical polishing to obtain a planarized structure whereby a metallurgical pattern is embedded in and co-planar with said patterned polyimide layer.

23. A method of defining terminal vias in semiconductor devices using precursors of low thermal coefficient of expansion polyimides comprising the steps of:

O₂ plasma cleaning a substrate comprised of a silicon wafer or ceramic substrate;

treating said substrate with gamma-aminopropyl triethoxysilane as a 0.1% solution in water or 95;

5 ethanol-water mixture as an adhesion promoter;

applying a coating of a 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition on said substrate by spin or spray coating; and

forming a patterned polyimide layer on said structure by baking said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition at about 100°

-130°

C. for approximately 15-65 minutes, applying a positive photoresist, prebaking at about 85°

-90°

C. for approximately 2-15 minutes, imagewise exposing said positive photoresist using an optical exposure source, developing in a potassium hydroxide developer under conditions where said coating of said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition is not etched, rinsing with water and blow drying, treating with aqueous tetramethylammoniumhydroxide, 0.05-0.25N, for 20-60 seconds without attack on said positive photoresist, rinsing with methanol or aqueous methanol with agitation or by spray technique until the exposed polyamic acid areas are completely removed, removing said positive photoresist by acetone spray rinse and blow drying, and thermally curing said 3,3'"'"',4,4'"'"'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine polyamic acid composition according to a thermal cycle comprising about 85°

C. for approximately 30 minutes, about 140°

-150°

C. for approximately 45 minutes, about 230°

-250°

C. for approximately 30 minutes, about 300°

C. for approximately 30 minutes, and about 350°

- 400°

C. for approximately 60 minutes.