Semiconductor power module

• US 5,471,089 A
• Filed: 06/24/1993
• Issued: 11/28/1995
• Est. Priority Date: 06/30/1992
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nishiyama, Masaki, Nagatomo, Akihiro, Yoshida, Hiroshi, Oshima, Seiichi
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): WHITEHEAD JR, CARL W
• Application Number:
  US08/080,781
• Time in Patent Office: 887 Days
• Field of Search: 257/666, 257/691, 257/692, 257/693, 257/698, 257/723, 257/724, 257/725, 257/728, 257/712, 257/713
• US Class Current: 257/691
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/49431 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/49433 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01093 : Neptunium [Np]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

In a semiconductor power module, a surge voltage on a power source line of a semiconductor element for electric power control is restrained. A power source terminal PS(NP) is comprised of power source terminals PS(P) and PS(N) which are arranged adjacent each other through an insulative sheet INS1 made of insulative synthetic resin or the like. The power source terminals PS(P) and PS(N) are each formed by a conductive plate and respectively transmit a positive and negative power source potentials. The thickness of the insulative sheet INS1 is 0.5 mm to 1.5 mm, for instance. A reduction is made in a parasitic inductance which is present in the power source line which extends from the power source terminal PS(P) to the power source terminal PS(N) through the semiconductor element for electric power control, thereby suppressing a surge voltage which is developed between the power source terminal PS(P) and the power source terminal PS(N).

Claims

1. A semiconductor power module comprising:

(a) a semiconductor element for electric power control;

(b) a circuit board, comprising;

(b-1) a circuit board body having an insulator; and

(b-2) first and second wiring patterns disposed on one major surface of said circuit board in such a manner that principal parts of said first and said second wiring patterns are longitudinally adjacent each other, said first and said second wiring patterns transmitting first and second power source potentials to said semiconductor element for electric power control, respectively; and

(c) a first and a second power source terminals which are connected to said first and said second wiring patterns, respectively,

said first and second wiring patterns and said first and second power source terminals being disposed in such a manner that power source currents flow in said first and said second wiring patterns in substantially parallel but opposite directions.

21. The semiconductor power module of claim 1, wherein said first wiring pattern is a high potential wiring pattern and said second wiring pattern is a low potential wiring pattern.

2. A semiconductor power module comprising:

(a) a semiconductor element for electric power control; and

(b) a power source terminal for transmitting first and second power source potentials to said semiconductor element for electric power control,

wherein said power source terminal comprises;

(b-1) an insulator; and

(b-2) first and second conductors for transmitting said first and said second power source potentials, respectively, said first and said second conductors being electrically insulated from each other by said insulator, said first and said second conductors being longitudinally adjacent to each other and carrying power source currents in substantially parallel but opposite directions.

5. The semiconductor power module of claim 2, further comprising

(c) a circuit board, said circuit board comprising

(c-1) a circuit board body having an insulator;

and

(c-2) a first and second wiring patterns disposed on one major surface of said circuit board body in such a manner that principal parts of said first and said second wiring patterns are adjacent each other, said first and said second wiring patterns transmitting a first and second power source potentials to said semiconductor element for electric power control, respectively, said first and said second wiring patterns being connected to said first and said second conductors, respectively.

6. The semiconductor power module of claim 2, further comprising

(c) a circuit board, said circuit board comprising

(c-1) a circuit board body having an insulator;

and

(c-2) first and a second wiring patterns respectively formed in a first and second different planes which are parallel to a major surface of said circuit board body in such a manner that principal parts of said first and said second wiring patterns are facing each other, said first and said second wiring patterns transmitting a first and second power source potentials to said semiconductor element for electric power control, respectively, said first and said second wiring patterns being connected to said first and said second conductors, respectively.

7. The semiconductor power module of claim 6, wherein said first and said second planes respectively correspond to a first and a second major surfaces of said circuit board.

8. The semiconductor power module of claim 2, wherein said semiconductor element for electric power control comprises:

(a-1) a first switching element having a first high electric potential side output terminal and a first low electric potential side output terminal, said first high electric potential side output terminal being connected to said first power source potential, said first low electric potential side output terminal being connected to an end of a load, said first switching element alternately conducting and blocking a current flow between the pair of said output terminals; and

(a-2) a second switching element having a second high electric potential side output terminal and a second low electric potential side output terminal, said second high electric potential side output terminal being connected to said end of said load and said first low electric potential side output terminal, said second low electric potential side output terminal being connected to said first power source potential, said second switching element alternately conducting and blocking a current flow between the pair of said output terminals.

9. The semiconductor power module of claim 8, wherein said first switching element comprises (a-1-1) a first insulative gate bipolar transistor having a first collector terminal, a first emitter terminal and a first gate terminal, said first collector terminal functioning as said first high electric potential side output terminal, said first emitter terminal functioning as said first low electric potential side output terminal,

and wherein said second switching element comprises (a-2-1) a second insulative gate bipolar transistor having a second collector terminal, a second emitter terminal and a second gate terminal, said second collector terminal functioning as said second high electric potential side output terminal, said second emitter terminal functioning as said second low electric potential side output terminal.

10. The semiconductor power module of claim 9, further comprising (c) a control circuit for controlling operations of said semiconductor element for electric power control, said control circuit transmitting a control voltage signal to said first and said second gate terminals.

11. The semiconductor power module of claim 10, wherein said control circuit comprises

(c-1) a first semiconductor element for transmitting a control voltage signal to said first gate terminal;

and

(c-2) a second semiconductor element for transmitting a control voltage signal to said second gate terminal.

12. The semiconductor power module of claim 11, further comprising (d) a main circuit board for mounting on its major surface said first and said second insulative gate bipolar transistors, said main circuit board comprising:

(d-1) a main circuit board body having an insulator;

(d-2) a first wiring pattern disposed on said main circuit board body, said first pattern connecting said first collector terminal to said first conductor; and

(d-3) a second wiring pattern disposed on said main circuit board body, said second pattern connecting said second collector terminal to said second conductor.

13. The semiconductor power module of claim 12, wherein said control circuit further comprises (c-3) a control circuit board for mounting said first and said second semiconductor elements, said control circuit board being separated from said main circuit board.

14. The semiconductor power module of claim 13, further comprising (e) a plate having an excellent thermal conductivity mounted to a major surface of said main circuit board which is opposite to said major surface on which said first and said second insulative gate bipolar transistors are seated.

15. The semiconductor power module of claim 14, wherein said control circuit board and said main circuit board are arranged in an approximately parallel and opposite relation to each other.

16. The semiconductor power module of claim 15, wherein said first semiconductor element is disposed on said control circuit board at a position which faces said first insulative gate bipolar transistor to which said first semiconductor element provides a control voltage signal,

and wherein said second semiconductor element is disposed on said control circuit board at a position which faces said second insulative gate bipolar transistor to which said second semiconductor clement provides a control voltage signal.

17. The semiconductor power module of claim 16, further comprising (f) a frame member secured to said plate having an excellent thermal conductivity,

wherein said frame member and said plate having an excellent thermal conductivity form a case, respectively as a side wall of said case and the bottom of said case,

and wherein said case houses said main circuit board, said semiconductor clement for electric power control, and said control circuit.

18. The semiconductor power module of claim 17, wherein said main circuit board body is made substantially of aluminum nitride.

19. The semiconductor power module of claim 17, wherein said main circuit board body is made substantially of ceramic.

20. The semiconductor power module of claim 17, wherein said plate having an excellent thermal conductivity is made substantially of copper.

22. The semiconductor power module of claim 2, wherein said first wiring pattern is a high potential wiring pattern and said second wiring pattern is a low potential wiring pattern.

3. A semiconductor power module comprising:

(a) a semiconductor element for electric power control;

(b) a circuit board, comprising;

(b-1) a circuit board body having an insulator; and

(b-2) first and second wiring patterns respectively formed in first and second different planes which are parallel to a major surface of said circuit board body in such a manner that principal parts of said first and said second wiring patterns are longitudinally facing each other, said first and said second wiring patterns transmitting first and second power source potentials to said semiconductor element for electric power control, respectively; and

(c) first and second power source terminals which are connected to said first and said second wiring patterns, respectively,

said first and second wiring patterns and said first and second power source terminals being disposed in such a manner that power source currents flow in said first and second wiring patterns in substantially parallel but opposite directions.

23. The semiconductor power module of claim 3, wherein said first wiring pattern is a high potential wiring pattern and said second wiring pattern is a low potential wiring pattern.

4. A semiconductor power module comprising:

(a) a semiconductor element for electric power control; and

(b) a power source terminal for transmitting first and second power source potentials to said semiconductor element for electric power control, said power source terminal comprising;

(b-1) a first insulator; and

(b-2) first and second conductors for transmitting said first and said second power source potentials, respectively, said first and said second conductors being electrically insulated from each other by said first insulator, said first and said second conductors being longitudinally adjacent to each other and carrying power source currents in substantially parallel but opposite directions; and

(c) an external power source terminal connected to said power source terminal by a conductive connection member, said external power source terminal comprising;

(c-1) a second insulator; and

(c-2) third and fourth conductors for transmitting said first and said second power source potentials, respectively, said third and said fourth conductors being electrically insulated from each other by said second insulator, said third and said fourth conductors carrying power source currents in substantially parallel but opposite directions,

wherein said power source terminal and said external power source terminal are connected by said connection member in such a manner that said first and said third conductors are in contact and hence in electrical connection to each other, and said second and said fourth conductors, each in contact to said connection member, are electrically coupled to each other through said connection member.

24. The semiconductor power module of claim 4, wherein said first wiring pattern is a high potential wiring pattern and said second wiring pattern is a low potential wiring pattern.

25. A semiconductor power module comprising:

(a) a semiconductor element for electric power control having a high power source potential electrode and a low power source potential electrode;

(b) a circuit board, comprising;

(b-1) a circuit board body having an insulator; and

(b-2) first and second wiring patterns connected to said high and lower power source potential electrodes, respectively, and disposed on one major surface of said circuits and board body; and

(c) first and second power source terminals which are connected to said first and second wiring patterns, respectively,

said first and second wiring patterns and said first and second power source terminals being disposed in such a manner that principal parts of said first and said second wiring patterns are longitudinally adjacent each other, and

said principal parts defining paths from said first power source terminal to said high power source potential electrode along said first wiring pattern and from said second power source terminal to said low power source potential electrode along said second wiring pattern, respectively.

26. A semiconductor power module comprising:

(a) a semiconductor element for electric power control having a power source potential electrode and a low power source potential electrode; and

(b) a power source terminal,

wherein said power source terminal comprises;

(b-1) an insulator; and

(b-2) first and second conductors being electrically insulated from each other by said insulator, principal parts of said first and said second conductors being longitudinally adjacent each other, an end of said first conductor being electrically coupled with said first high power source potential electrode and an end of said second conductor being electrically coupled with said low power source potential electrode, said ends of said first and said second conductors being on the same side with respect to said principal parts.

29. The semiconductor power module of claim 26, further comprising:

(c) a circuit board having first and second wiring patterns, said high and said low power source potential electrodes being connected to said first and said second wiring patterns, respectively, and said ends of said first and said second conductors being connected to said first and said second wiring patterns, respectively, so as to be electrically coupled with said high and said low power source potential electrodes through said first and said second wiring patterns, respectively; and

(d) a housing case containing said semiconductor element and said circuit board;

wherein other ends of said first and said second conductors are exposed outside said housing case.

30. The semiconductor power module of claim 29,

wherein said insulator and said first and said second conductors have shapes of flat belts, and said insulator is sandwiched in between said first and said second conductors.

27. A semiconductor power module comprising:

(a) a semiconductor element for electric power control having high power source potential electrode and a low power source potential electrode;

(b) a circuit board, comprising;

(b-1) a circuit board body having an insulator; and

(b-2) first and second wiring patterns respectively connected to said high and said low power source potential electrodes, and respectively formed in first and second different planes which are parallel to a major surface of said circuit board body; and

(c) first and second power source terminals which are connected to said first and said second wiring patterns, respectively,

said first and second wiring patterns and said first and second power source terminals being disposed in such a manner that principal parts of said first and second wiring patterns are longitudinally facing each other, and

said principal parts defining paths from said first power source terminal to said high power source potential electrode along said first wiring pattern and from said second power source terminal to said low power source potential electrode along said second wiring pattern, respectively.

28. A semiconductor power module comprising:

(a) a semiconductor element for electric power control having a high power source potential electrode and a low power source potential electrode; and

(b) a power source terminal, said power source terminal comprising;

(b-1) a first insulator; and

(b-2) first and second conductors being electrically insulated from each other by said first insulator, principal parts of said first and said second conductors being longitudinally adjacent to each other, an end of said first conductor being electrically coupled with said high power source potential electrode and an end of said second conductor being electrically coupled with said low power source potential electrode, said ends of first and second conductors being on the same side with respect to said principal parts of said first and second conductors; and

(c) an external power source terminal connected to said power source terminal by a conductive connection member, said external power source terminal comprising;

(c-1) a second insulator; and

(c-2) third and fourth conductors being electrically insulated from each other by said second insulator, principal parts of said third and said fourth conductors being longitudinally adjacent to each other,

wherein said power source terminal and said external power source terminal are connected by said connection member in such a manner that another end of said first conductor and an end of said third conductor are in contact and hence in electrical connection to each other, another end of said second conductor and an end of said fourth conductor, each in contact to said connection member, are electrically coupled to each other through said connection member,

wherein said ends of said third and said fourth conductors are on the same side with respect to said principal parts of said third and said fourth conductors.

31. The semiconductor power module of claim 28, further comprising:

(d) a circuit board having first and second wiring patterns, said high and low power source potential electrodes being connected to said first and second wiring patterns, respectively, and said ends of said first and said second conductors being connected to said first and said second wiring patterns, respectively, so as to be electrically coupled with said high and said low power source potential electrodes through said first and said second wiring patterns, respectively; and

(e) a housing case containing said semiconductor element and said circuit board;

wherein other ends of said first and said second conductors are exposed outside said housing case, and said external power source terminal is disposed outside said housing case.

32. The semiconductor power module of claim 31,

wherein said first and said second insulators and said first to said fourth conductors have shapes of flat belts, said first insulator is sandwiched in between said first and said second conductors, and said second insulator is sandwiched in between said third and said fourth conductors.