Topology induced plasma enhancement for etched uniformity improvement

• US 5,472,565 A
• Filed: 11/17/1993
• Issued: 12/05/1995
• Est. Priority Date: 11/17/1993
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Lenz, Eric H., Mundt, Randall S., Kerr, David R.
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/153,084
• Time in Patent Office: 748 Days
• Field of Search: 204/298.31, 204/298.33, 204/298.39, 204/192.32, 156/643, 156/646, 156/345
• US Class Current: 216/71
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32596 Hollow cathodes

Abstract

A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon.

Claims

1. An electrode useful in a plasma reaction chamber, comprising:

one or more outlets in a central portion of the electrode for discharging reactant gas outwardly of an exposed surface of the electrode; and

a groove in the exposed surface, the groove being located at a peripheral portion of the electrode and extending at least partly around the central portion of the electrode, the groove being effective for topographically enhancing a local density of the plasma formed adjacent the exposed surface of the electrode.

2. The plasma electrode as claimed in claim 1, wherein said peripheral portion of the electrode includes a second groove in said exposed surface of the electrode.

3. The plasma electrode as claimed in claim 2, wherein said grooves extend completely around said central portion of the electrode.

4. The plasma electrode as claimed in claim 3, wherein one of said grooves includes means for discharging gas from said peripheral portion of the electrode.

5. The plasma electrode as claimed in claim 4, wherein said grooves are formed in a replaceable insert mounted in said peripheral portion of the electrode.

6. The plasma electrode as claimed in claim 1, wherein a width of said groove is between 5 and 50 times a mean free path of a molecule of the plasma formed by the electrode.

7. The plasma electrode as claimed in claim 1, wherein a shape of said groove is selected from the group consisting of U-shaped, V-shaped, channel-shaped, or any combination thereof.

8. The plasma electrode as claimed in claim 1, wherein said groove includes means for discharging gas from said peripheral portion of the electrode.

9. The plasma electrode as claimed in claim 1, wherein said groove is formed in a replaceable insert mounted in said peripheral portion of the electrode.

10. The plasma electrode as claimed in claim 1, wherein the electrode comprises a single crystal of silicon.

11. The plasma electrode as claimed in claim 1 wherein the electrode forms part of a semiconductor etching apparatus.

12. The plasma electrode as claimed in claim 1, wherein the groove has a width of 0.015 to 0.150 inch.

13. The plasma electrode as claimed in claim 1, wherein the groove is a channel-shaped groove extending completely around the central portion of the electrode.

14. A method of treating an article with a plasma using an electrode having a central portion and a peripheral portion surrounding the central portion, the peripheral portion including a groove in an exposed surface of the electrode and extending at least partly around the central portion of the electrode, the groove being effective for topographically enhancing a local density of the plasma formed adjacent the exposed surface of the electrode, said method comprising the steps of:

discharging reactant gas from a central portion of the electrode;

forming a plasma adjacent an exposed portion of the electrode, the plasma being in contact with the central and peripheral portions of the electrode; and

topographically enhancing a density of the plasma at the peripheral portion of the electrode by contact of the plasma with surfaces of the electrode forming the groove.

15. The method as claimed in claim 14, further comprising a step of discharging gas from the groove.

16. The method as claimed in claim 14, further comprising a step of etching a semiconductor wafer with the plasma.

17. The method as claimed in claim 14, wherein the groove has a width of between 5 and 50 times a mean free path of a molecule of the reactant gas.

18. The method as claimed in claim 14, wherein the groove is a channel-shaped groove extending completely around the central portion of the electrode.