Complementary-SCR electrostatic discharge protection circuit

• US 5,473,169 A
• Filed: 03/17/1995
• Issued: 12/05/1995
• Est. Priority Date: 03/17/1995
• Status: Expired due to Term

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Ker, Ming-Dou, Lee, Chung-Yuan, Wu, Chung-Yu, Ko, Joe
• Primary Examiner(s): MONIN, DONALD L JR
• Application Number:
  US08/406,170
• Time in Patent Office: 263 Days
• Field of Search: 257/126, 257/128, 257/164, 257/165, 257/356, 257/361, 257/362, 257/355, 257/491, 257/173, 257/174, 361/57, 361/91, 361/93, 361/100, 361/101, 361/111
• US Class Current: 257/173
• CPC Class Codes: H01L 27/0259 using bipolar transistors as protective elements

Abstract

A complementary-SCR electrostatic discharge protection circuit in a silicon substrate, coupling to I/O pads for bypassing electrostatic current of positive or negative polarity respect to power supply voltages V_DD and V_SS. The circuit comprises a first SCR and a second SCR each having an anode, a cathode, an anode gate and a cathode gate. The circuit of the present invention preferably includes a finger type layout structure for providing a larger capacity to bypass electrostatic current. It is also characterized by a base-emitter shorting design to avoid a V_DD -to-V_SS latch-up effect.

Claims

1. A complementary-SCR electrostatic discharge protection circuit formed on a silicon substrate of a first conductivity type, wherein a first SCR, an I/O pad and a second SCR are arranged sequentially in a first direction on said silicon substrate;

said complementary-SCR electrostatic discharge protection circuit comprising;

a first well of a second conductivity type formed on said silicon substrate, wherein a plurality of regions of first conductivity type are formed along said first direction and electrically coupled to said I/O pad to define cathodes of said first SCR, and at least one region of second conductivity type for coupling with a first voltage is formed between said regions of first conductivity type to define a cathode gate of said first SCR;

a second well of second conductivity type formed on said silicon substrate closely circulating said first well, wherein at least one region of second conductivity type for coupling with a second voltage and defines an anode of said first SCR;

a region of first conductivity type formed on said silicon substrate, adjacent to said second well, for coupling with said second voltage to define an anode gate of said first SCR;

a plurality of third wells of second conductivity type formed on said silicon substrate along said first direction, wherein at least one region of first conductivity type is arranged in said first direction for coupling with said first voltage to define a cathode of said second SCR, and at least one region of second conductivity adjacent to said region of first conductivity type applied with said first voltage to become a cathode gate of said second SCR;

a fourth well of second conductivity type formed between said third wells on said silicon substrate, wherein at least one region of second conductivity type located along said first direction is coupled electrically to said I/O pad and defines an anode of said second SCR; and

a region of first conductivity type formed on said silicon substrate, encircling said third wells and said fourth wells, for coupling said second voltage and defining an anode gate of said second SCR.

2. The complementary-SCR electrostatic discharge protection circuit as claimed in claim 1, wherein said silicon substrate of first conductivity type is an n-type silicon substrate;

said wells of second conductivity type are p-type wells;

said regions of first conductivity type are heavily doped N-type regions; and

said regions of second conductivity type are heavily doped P-type regions.

3. The complementary-SCR electrostatic discharge protection circuit as claimed in claim 1, wherein said silicon substrate of first conductivity type is a p-type silicon substrate;

said wells of second conductivity type are n-type wells;

said regions of first conductivity type are heavily doped p-type regions; and

said regions of second conductivity type are heavily doped n-type regions.