Semiconductor device with an MOST provided with an extended drain region for high voltages
First Claim
1. A semiconductor device with a semiconductor body comprising a surface region of a first conductivity type which adjoins a surface and in which a field effect transistor with an insulated gate is provided, with source and drain regions of the second, opposed conductivity type in the surface region and a drain extension region of the second conductivity type which adjoins the drain region and the surface, which has a lower doping concentration than the drain region, and which extends longitudinally in the direction of the source region, with a channel region of the first conductivity type situated between the drain extension region and the source region, and with a gate electrode situated above the channel region and separated from the channel region by an insulating layer, characterized in that the drain extension region comprises a plurality of zones of the second conductivity type, said zones extending from the channel region to the drain region and having means for fully depleting the drain extension region and comprising said zones having a width and doping concentration such that upon an increase in the voltage difference across the blocked pn junction between the surface region and the drain extension region the drain extension region is fully depleted at least locally before drain breakdown takes place, said zones being spaced apart at said channel region.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device with a semiconductor body (1) includes a surface region (3) of a first conductivity type which adjoins a surface and in which a field effect transistor is provided which includes a channel region (7) with a gate electrode (8) above it, and a source region (4), a drain region (5) and a drain extension region (6). The drain extension region (6) serves to improve the drain breakdown voltage of the field effect transistor. In practice, a high breakdown voltage is accompanied by a comparatively high on-resistance of the transistor. According to the invention, the drain extension region (6) has a geometry different from that in known transistors, i.e. the drain extension region (6) includes a number of zones (25) of the second conductivity type which extend from the channel region (7) to the drain region (5) and which have a width (26) and doping concentration such that, when the voltage difference across the blocked pn junction (28) between the surface region (3) and the drain extension region (6) is increased, the drain extension region (6) is fully depleted at least locally before drain breakdown occurs. This renders it possible to choose the number and the width (26) of the zones (25) as an additional parameter of the device. Such devices have comparatively high drain breakdown voltages and comparatively low on-resistances which cannot be realized with a continuous drain extension region (6).
-
Citations
5 Claims
- 1. A semiconductor device with a semiconductor body comprising a surface region of a first conductivity type which adjoins a surface and in which a field effect transistor with an insulated gate is provided, with source and drain regions of the second, opposed conductivity type in the surface region and a drain extension region of the second conductivity type which adjoins the drain region and the surface, which has a lower doping concentration than the drain region, and which extends longitudinally in the direction of the source region, with a channel region of the first conductivity type situated between the drain extension region and the source region, and with a gate electrode situated above the channel region and separated from the channel region by an insulating layer, characterized in that the drain extension region comprises a plurality of zones of the second conductivity type, said zones extending from the channel region to the drain region and having means for fully depleting the drain extension region and comprising said zones having a width and doping concentration such that upon an increase in the voltage difference across the blocked pn junction between the surface region and the drain extension region the drain extension region is fully depleted at least locally before drain breakdown takes place, said zones being spaced apart at said channel region.
Specification