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Semiconductor device with an MOST provided with an extended drain region for high voltages

  • US 5,473,180 A
  • Filed: 07/11/1994
  • Issued: 12/05/1995
  • Est. Priority Date: 07/12/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device with a semiconductor body comprising a surface region of a first conductivity type which adjoins a surface and in which a field effect transistor with an insulated gate is provided, with source and drain regions of the second, opposed conductivity type in the surface region and a drain extension region of the second conductivity type which adjoins the drain region and the surface, which has a lower doping concentration than the drain region, and which extends longitudinally in the direction of the source region, with a channel region of the first conductivity type situated between the drain extension region and the source region, and with a gate electrode situated above the channel region and separated from the channel region by an insulating layer, characterized in that the drain extension region comprises a plurality of zones of the second conductivity type, said zones extending from the channel region to the drain region and having means for fully depleting the drain extension region and comprising said zones having a width and doping concentration such that upon an increase in the voltage difference across the blocked pn junction between the surface region and the drain extension region the drain extension region is fully depleted at least locally before drain breakdown takes place, said zones being spaced apart at said channel region.

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