Memory architecture and devices, systems and methods utilizing the same

• US 5,473,566 A
• Filed: 09/12/1994
• Issued: 12/05/1995
• Est. Priority Date: 09/12/1994
• Status: Expired due to Term

• Current Assignee: Intellectual Ventures II LLC (Intellectual Ventures LLC)
• Original Assignee: Cirrus Logic Incorporated
• Inventors: Rao, G. R. Mohan
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): LE, VU ANH
• Application Number:
  US08/304,508
• Time in Patent Office: 449 Days
• Field of Search: 365/189.12, 365/230.05, 365/230.03, 365/230.09, 365/238.5, 365/239, 365/240, 365/189.04, 365/219, 365/220, 365/189.07
• US Class Current: 365/189.12
• CPC Class Codes: G11C 7/1036 using data shift registers

Abstract

A memory 200 is provided which includes a plurality of self-contained memory units 201 for storing data. A plurality of shift registers 211 are provided, each including a first parallel port coupled to a data port of a corresponding one of the self-contained memory units 201. Interconnection circuitry 212 is coupled to a parallel data port of each of the shift registers. Control circuitry 208, 213 is provided which is operable to control the exchange of data between a selected one of the memory units and the interconnection circuitry 212 via the shift register 211 coupled to the selected memory unit 201.

Claims

1. A memory comprising:

a plurality of self-contained memory units for storing data;

a plurality of shift registers, each said shift register including a first parallel data port coupled to a data port of a corresponding one of said self-contained memory units and a serial port;

interconnection circuitry coupled to a second parallel data port of each said shift register; and

control circuitry operable to control the exchange of data between a selected one of said memory units and said interconnection circuitry via said parallel ports of said shift register coupled to said selected memory unit and the exchange of data with said selected one of said memory units through said serial port of said shift register coupled to said selected memory unit.

3. The memory of claim 1 wherein said control circuitry is operable to control an interleaved exchange of data with a plurality of said memory units through said serial port of said corresponding shift registers.

4. The memory of claim 1 wherein each of said memory devices includes a random access data port and said control circuitry is further operable to control the interleaved exchange of data with a plurality of said memory units through said corresponding random access data ports.

5. The memory of claim 1 wherein each of said memory units comprises:

an array of memory cells arranged in rows and columns;

circuitry for addressing a selected said row in said array;

circuitry for addressing at least one of said columns; and

sense amplifier circuitry for controlling the exchange of data with said columns of cells.

6. The memory of claim 5 wherein said data port of each of said memory units is coupled to said circuitry for addressing at least one of said columns.

7. The memory of claim 1 wherein said each of said memory units comprises:

an array of dynamic random access memory cells arranged in rows and columns, each of said rows associated with a wordline and each of said columns associated with a bitline;

row decoder circuitry coupled to said wordlines;

sense amplifier circuitry coupled to said bitlines; and

column decoder circuitry coupled to said sense amplifier circuitry, said column decoder circuitry providing said output port of said memory unit.

8. The circuitry of claim 1 wherein said interconnection circuitry comprises a bus.

2. The memory of claim I wherein said control circuitry is operable to control the exchange of a block of data from a first one of said memory units to a second one of said memory units via said interconnection circuitry and said shift registers respectively coupled to said first and second memory units.

9. A memory system comprising:

a plurality of memory subsystems each comprising;

an array of rows and columns of memory cells;

row decoder circuitry for selecting a said row of cells in response to a row address; and

sense amplifier circuitry for reading and writing data to and from a said cell of a selected said row and a selected said column; and

a plurality of shift registers each for controlling the exchange of data with a respective said subsystem, wherein each said shift register including a serial port for inputting and outputting data for exchange with said respective said subsystem.

10. The memory system of claim 9 wherein each said shift register includes a parallel port for exchanging parallel bits of data between associated interconnection circuitry and a corresponding said subsystem.

11. The memory system of claim 9 wherein each of said subsystems further comprises a column decoder for coupling said corresponding shift register with selected ones of said columns of said array of a said subsystem in response to a column address.

12. The memory system of claim 10 and further comprising control circuitry operable to control the transfer of data from a first said subsystem through a corresponding said shift register to a second one of said subsystems through a corresponding said shift register.

13. The memory system of claim 12 wherein said control circuitry is operable to control the transfer of data from an entire said row in said array of said first subsystem to a said row in said array of said second subsystem.

14. The memory system of claim 10 wherein said control circuitry is operable to control a transfer of a block of data from a plurality of said rows in said array of said first subsystem to a plurality of said rows in said array of said second subsystem.

15. The memory system of claim 14 wherein said control circuitry includes address generation circuitry for generating at least some addresses for presentation to said row decoders of said first and second subsystems to select said plurality of rows in said first and second subsystems.

16. The memory system of claim 15 wherein said control circuitry receives at least one address from an external source for selecting at least a first one of said plurality of rows in said first subsystem.

17. The memory system of claim 9 wherein said control circuitry is operable to control an interleaved exchange of data between an external device and each of a plurality of said subsystems through said serial ports of corresponding ones of said shift registers.

18. The memory system of claim 11 wherein each said column decoder provides a random access port for providing random accesses to said array of a corresponding one of said subsystems.

19. A memory device comprising:

a plurality of self-contained memory units for storing data, each including an array of dynamic random access memory cells arranged in rows and columns, circuitry for addressing selected ones of said cells, and sensing circuitry for reading and writing data into said selected cells;

a plurality of shift registers, each said shift register including a first parallel data port coupled to a data port of a corresponding one of said self-contained memory units and a serial port coupled to device input/output circuitry;

interconnection circuitry coupled to a second parallel data port of each said shift registers; and

control circuitry operable to control the exchange of data between selected said cells of a selected one of said memory units and said interconnection circuitry via said parallel ports of corresponding said shift registers and to control the exchange of data between selected said cells and said device input/output circuitry via said serial port of said corresponding shift register.

20. The memory device of claim 19 wherein each of said memory units includes circuitry for independently refreshing data stored in said array of dynamic memory cells in said memory unit.

21. The memory device of claim 19 wherein said plurality of memory units are fabricated as a single integrated circuit.

22. The memory device of claim 19 wherein said interconnection circuitry comprises a bus.

23. The memory device of claim 19 wherein each said array includes n number of columns and said data port is n number of bits wide.

24. The memory device of claim 23 wherein said register is n number of bits wide.

25. The memory device of claim 23 wherein each said shift register is greater than n number of bits in length.

26. A method for performing a data transfer in a memory including a plurality of self-contained memory units, each having an array of memory cells arranged in rows and columns and associated addressing circuitry and a plurality of shift registers each coupling a respective memory unit with interconnection circuitry, the method comprising the steps of:

reading a plurality of bits from a selected row of cells in a first one of the memory units;

passing the plurality of bits through the shift register coupled to the first memory unit to the interconnection circuitry;

passing the plurality of bits through the shift register coupled to a second one of the memory units; and

writing the plurality of bits into a row in the second memory unit.

27. The method of claim 26 wherein said step of reading a plurality of bits comprises the step of reading a plurality of bits stored in all of the memory cells of the selected row of cells.

28. A processing system comprising:

a graphics processor for processing graphics data;

a video processor for processing video data;

a unified frame buffer comprising;

a plurality of self-contained memory units;

a plurality of shift registers, each said shift register including a first parallel data port coupled to a data port of a corresponding one of said self-contained memory units;

interconnection circuitry coupled to a second parallel data port of each said shift register; and

control circuitry operable to control the exchange of data between a selected one of said memory units and said interconnection circuitry via said shift register coupled to said selected memory unit; and

wherein said graphics processor is coupled to a selected one of said plurality of self-contained memory units for exchanging data therewith; and

said video processor is coupled to another one of said plurality of self-contained memory units for exchanging data therewith.

29. The processing system of claim 28 wherein said graphics processor and said video processor are coupled to a random access port of respective ones of said memory units.

30. The processing system of claim 28 wherein said graphics processor and said video processor are coupled to a serial access port of respective ones of said memory units.