Controlled tapered angle etching process for fabricating optical integrated circuits

• US 5,473,710 A
• Filed: 10/08/1993
• Issued: 12/05/1995
• Est. Priority Date: 10/08/1993
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wu, Ching-Yi, Hong, Chao-Fu, Jaw, Ten-Hsing
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): PALMER, PHAN T H
• Application Number:
  US08/134,420
• Time in Patent Office: 788 Days
• Field of Search: 385/14, 385/8, 385/43, 385/48, 385/129, 385/130, 385/131, 385/132
• US Class Current: 385/14
• CPC Class Codes: G02B 2006/12195 Tapering
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02B 6/42 Coupling light guides with opto-electronic elements

Abstract

The present invention discloses an OIC fabrication system which includes a tapered angle computing means for computing a tapered angle for aching a required coupling efficiency. The fabrication system also includes a fabrication control means which includes a tabulated fabricating parameter database for determining and controlling a plurality of fabricating parameters. The fabrication system also includes an etching system which receives a plurality of control signals from the fabrication controlling means to carry out the etching process to form a tapered etching angle such that the optical coupling efficiency can be achieved.

Claims

1. A system for fabricating an OIC device with specific optical coupling efficiency requirement comprising:

a tapered angle computing means for receiving said optical coupling efficiency requirement (T) to compute a required tapered angle θ

according to an equation;

space="preserve" listing-type="equation">θ

=R.sup.-1 (T)

where R^-1 is a reverse transforming function derived from a set of electromagnetic wave transportation equations;

a fabricating controlling means utilizing said required tapered angle and a plurality of functional dependence data of said tapered angle relating to a plurality of fabrication parameters from a database wherein said tapered angle θ

being represented as a function of an etching time (E_t), an etching temperature, (E_temp), a concentration of the etchant solution (C), a photoresist material (M), and a photoresist thickness (D) as;

space="preserve" listing-type="equation">θ

=F(E.sub.t, E.sub.temp, C, M, D)

said etching means performs an etching process on an OIC chip which includes a semiconductor substrate having a top surface, a buffer layer formed on said top surface and a photoresist layer formed on top of said buffer layer defining an etching window; and

said buffer layer being a silicon dioxide layer, said photoresist layer is a positive photoresist layer having thickness approximately 2.1 μ

m or greater, said etchant is a mixture of two etchants NH4F(40%) and HF(40%) at ratio of approximately 30;

1, said etching temperature is controlled at an approximate range from 22.5°

to 57°

C. for an etching time of approximately nine to sixty minutes for making a tapered angle of ranging approximately from 7°

to 12°

.

2. The system for fabricating OIC device as recited in claim 1 wherein:

said etching means further forming, on top of said buffer layer, a wave guide layer for guiding an optical transmission therein wherein said wave guide layer being a layer of substantially uniform thickness.

3. A system for fabricating an OIC device with specific optical coupling efficiency requirement comprising:

an etching means for performing an etching process on an OIC chip which including a semiconductor substrate having a top surface, a buffer layer formed on said top surface, a photoresist layer formed on top of said buffer layer defining an etching window;

a tapered angle computing means for receiving said optical coupling efficiency requirement T to compute a required tapered angle θ

according to an equation;

space="preserve" listing-type="equation">θ

=R.sup.-1 (T) (13)

where R^-1 is a reverse transforming function derived from a set of electromagnetic wave transportation equations;

a fabricating controlling means utilizing said required tapered angle from said tapered angle computing means and a plurality of functional dependence data of said tapered angle relating to a plurality of fabrication parameters from a database for computing a plurality of controlling fabrication parameters;

said etching means further receiving said plurality of controlling fabrication parameters and for performing an etching process utilizing said controlling parameters to fabricate said OIC with said etching windowed formed with said required tapered angle.

4. The system for fabricating OIC device as recited in claim 3 wherein:

said etching means further forming, on top of said buffer layer, a wave guide layer for guiding an optical transmission therein wherein said wave guide layer being a layer of substantially uniform thickness.

5. The system for fabricating OIC device as recited in claim 4 wherein:

said fabricating controlling means computes said tapered angle θ

as function of an etching time (E_t), an etching temperature, E_temp), a concentration of the etchant solution (C), a photoresist material (M), and a photoresist thickness (D) as;

space="preserve" listing-type="equation">θ

=F(E.sub.t, E.sub.temp, C, M, D).

6. A method for fabricating an OIC device with a specific optical coupling efficiency requirement comprising the steps of:

(a) computing a tapered angle θ

by using said optical coupling efficiency requirement T according to an equation;

space="preserve" listing-type="equation">θ

=R.sup.-1 (T) (13)

where R^-1 is a reverse transforming function derived from a set of electromagnetic wave transportation equations;

(b) computing a plurality of controlling fabrication parameters by utilizing said required tapered angle and a plurality of functional dependence data of said tapered angle relating to a plurality of fabrication parameters from a database; and

(c) performing an etching process by utilizing said controlling parameters to fabricate said OIC including a semiconductor substrate having a top surface, a buffer layer formed on said top surface and a photoresist layer formed on top of said buffer layer defining an etching window with said required tapered angle.

7. The method for fabricating OIC device as recited in claim 6 wherein:

said step (c) of performing said etching process further including a step of forming, on top of said buffer layer, a wave guide layer for guiding an optical transmission therein wherein said wave guide layer being a layer of substantially uniform thickness.

8. The method for fabricating OIC device as recited in claim 7 wherein:

said step (b) of computing a plurality of controlling fabrication parameters further including s a step of computing said tapered angle θ

as function of an etching time (E_t), an etching temperature, (E_temp), a concentration of the etchant solution (C), a photoresist material (M), and a photoresist thickness (D) as;

space="preserve" listing-type="equation">θ

=F(E.sub.t, E.sub.temp, C, M, D).

9. A method for fabricating an OIC device with a specific optical coupling efficiency requirement comprising the steps of:

(a) computing a tapered angle θ

by using said optical coupling efficiency requirement T according to an equation;

space="preserve" listing-type="equation">θ

=R.sup.-1 (T) (13)

where R^-1 is a reverse transforming function derived from a set of electromagnetic wave transportation equations;

(b) computing a plurality of controlling fabrication parameters by utilizing said required tapered angle and a plurality of functional dependence data of said tapered angle relating to a plurality of fabrication parameters from a database wherein said tapered angle θ

being represented as a function of an etching time (E_t), am etching temperature, (E_temp), a concentration of the etchant solution (C) a photoresist material (M), and a photoresist thickness (D) as;

space="preserve" listing-type="equation">θ

=F(E.sub.t, E.sub.temp, C, M, D)

(c) performing an etching process to fabricate said OIC including a semiconductor substrate having a top surface, a buffer layer formed on said top surface and a photoresist layer formed on top of said buffer layer wherein said etching process being performed by controlling said etching temperature at approximately 22.5°

to 57°

C. for an etching time of approximately nine to sixty minutes and said buffer layer being a silicon dioxide layer, said photoresist layer is a positive photoresist layer having thickness approximately 2.1 μ

m or greater and said etchant is a mixture of two etchants NH4F(40%) and HF(40%) at ratio of approximately 30;

1 for making a tapered angle etching widow of approximately 7°

to 12°

on said OIC chip.

10. The method for fabricating OIC device as recited in claim 9 further including a step of:

(d) forming, on top of said buffer layer, a wave guide layer for guiding an optical transmission therein wherein said wave guide layer being a layer of substantially uniform thickness.