Globally planarized binary optical mask using buried absorbers

• US 5,474,865 A
• Filed: 11/21/1994
• Issued: 12/12/1995
• Est. Priority Date: 11/21/1994
• Status: Expired due to Fees

• Current Assignee: Sematech, Inc.
• Original Assignee: Sematech, Inc.
• Inventors: Vasudev, Prahalad K.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US08/342,940
• Time in Patent Office: 386 Days
• Field of Search: 430/5, 430/322, 430/323, 430/324, 430/321, 378/34, 378/35
• US Class Current: 430/5
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 1/60 Substrates

Abstract

A globally planarized binary optical mask has absorbers embedded (buried) in the mask substrate, instead of on the surface of the mask. Light scattering at rough vertical edges of absorbers of prior art masks are reduced or eliminated. Also, due to the buried nature of the absorbers, a triple singularity point encountered in prior art masks at the interface of three environments of quartz, absorber and air, no longer exists. The buried absorbers have an offset distance from the surface of the substrate so that with a minimum effective offset distance, defects and contaminants at the surface of the mask are no longer in the image plane, wherein alleviating a need for a pellicle to protect the mask surface. By reducing light scattering and distortion, the mask of the present invention allows for conventional optical lithography to be extended to ranges of shorter wavelength.

Claims

1. A binary optical photolithography mask for use in projecting an image pattern onto a target comprising:

a mask substrate formed from a substantially transparent material for permitting light transmission therethrough;

an absorber pattern formed from a light absorbing material, buried a set distance d below a surface of said substrate proximal to said target but not adjacent to said surface for absorbing at least a significant portion of light transmission therethrough to form a substantially opaque image pattern on said target;

wherein having said absorber pattern buried below said surface of said substrate, but not adjacent to said surface, allows for light scattered from surface areas of said absorber pattern to be reflected back into said substrate at a surface interface of said substrate, in order to improve image feature definition at said target; and

wherein having said absorber pattern buried below said surface at said set distance d is of sufficient depth in order to provide for a maximum depth of focus of an exposure system being utilized to reside within said substrate, such that surface defects and contaminants at said surface interface are not imaged onto said target.

2. The mask of claim 1 wherein said surface of said substrate has a substantially planar surface.

3. The mask of claim 2 wherein said light absorbing material is comprised of a metallic film.

4. The mask of claim 3 wherein a thickness t of said absorber pattern is determined by a relationship I=(Io) (e.sup.α

t), where Io is an incident intensity of light of said exposure system being utilized, I is a desired fraction of said incident intensity to be transmitted through said absorber pattern and a is an absorption coefficient for said light absorbing material.

5. The mask of claim 5 wherein said set distance d for said absorber pattern is determined by a relationship d=w/(2 tan ν

c), where θ

c is a critical angle for total internal reflection for said mask substrate and w is a width of a feature of said absorber pattern.

6. The mask of claim 6 wherein said mask substrate is made from quartz.

7. A method of fabricating a binary optical photolithography mask for use in projecting an image onto a target, comprising the steps of:

forming a photoresistive layer over a mask substrate;

patterning said photoresistive layer to expose portions of said substrate underlying said photoresistive layer;

etching said exposed portions of said substrate to a predefined depth to form trenches in said substrate;

removing remaining portions of said photoresistive layer;

depositing a layer of light absorbing material over said substrate and filling said trenches;

selectively etching back said layer of light absorbing material until only said trenches are filled with said light absorbing material;

forming a dielectric layer of a predefined thickness over said substrate and said trenches to form an upper boundary region of said mask in order to bury said light absorbing material below a surface of said mask now formed by exposed surface of said dielectric layer;

wherein said absorbing material forms an absorber pattern below said surface of said substrate but not adjacent to said surface, such that light scattered from surface areas of said absorber pattern are reflected back into said substrate at a surface interface of said substrate, in order to improve image feature definition at said target; and

wherein having said absorber pattern buried below said surface at a depth d, determined by said predefined thickness of said dielectric layer, is of sufficient depth in order to provide for a maximum depth of focus of an exposure system being utilized to reside within said substrate, such that surface defects and contaminants at said surface interface are not imaged.

8. The method of claim 7 wherein said step of forming said dielectric layer over said substrate and said trenches forms a substantially planar surface at said exposed surface of said dielectric layer.

9. The method of claim 8 wherein said step of selectively etching back said layer of light absorbing material is performed by a chemical-mechanical polishing process.

10. The method of claim 9 wherein a thickness t of said absorber pattern is determined by a relationship I=(Io)(e^-α

t), wherein Io is an incident intensity of light of said exposure system being utilized, I is a desired fraction of said incident intensity to be transmitted through said absorber pattern and α

is an absorption coefficient for said light absorbing material.

11. The method of claim 10 wherein said depth of said absorber pattern below said surface of said dielectric layer is determined by a relationship d=w/ (2 tan θ

c), where θ

c is a critical angle for total internal reflection for said mask substrate and w is a width of a feature said absorber pattern.

12. The method of claim 11 wherein said step of forming said dielectric layer is comprised of depositing an oxide layer of said predefined thickness.

13. The method of claim 12 wherein said mask substrate is made from quartz.

14. The method of claim 11 wherein said mask substrate is made from quartz and said step of forming said dielectric layer is comprised of bonding a quartz layer, having a thickness greater than said predefined thickness, onto said quartz substrate and etching back said quartz layer to said predefined thickness.

15. A method of fabricating a binary optical photolithography mask for use in projecting an image onto a target, comprising the steps of:

forming an oxide layer over a mask substrate;

forming a photoresistive layer over said oxide layer;

patterning said photoresistive layer to expose portions of said oxide layer underlying said photoresistive layer;

etching said exposed portions of said oxide layer to expose portions of said underlying substrate;

removing remaining portions of said photoresistive layer, but leaving patterned portions of said oxide layer;

implanting doped ions into exposed portions of said substrate to a set depth d below exposed surface of said substrate to form patterned light absorbing regions in said substrate but not adjacent to said surface;

removing remaining portion of said oxide layer such that said substrate has a substantially planar surface with buried light absorbing regions below surface of said substrate;

wherein said buried absorbing regions allow for light scattered from surface areas of said absorbing regions to be reflected back into said substrate at a surface interface of said substrate, in order to improve image feature definition at said target; and

wherein having said patterned absorbing regions buried below said surface at said depth d is of sufficient depth in order to provide for a maximum depth of focus of an exposure system being utilized to reside within said substrate, such that surface defects and contaminants at said surface interface are not imaged.

16. The method of claim 15 wherein thickness of said light absorbing regions in said step of implanting doped ions is determined by dosage of said doped ions implanted into said substrate.

17. The method of claim 16 wherein said set depth d of implanting doped ions is determined by an amount of implanting energy imparted on said ions during said step of implanting them.

18. The method of claim 17 wherein said dosage for implantation is in an approximate range of 3×

10¹⁷ /cm² -2×

10¹⁸ /cm².

19. The method of claim 18 wherein said implanting energy is in an approximate range of 1-5 million electron volts.

20. The method of claim 19 wherein said mask substrate is made from quartz.