Vertical microelectronic field emission devices

• US 5,475,280 A
• Filed: 08/30/1994
• Issued: 12/12/1995
• Est. Priority Date: 03/04/1992
• Status: Expired due to Fees

• Current Assignee: eMagin Corporation (Samsung Electronics Co. Ltd.)
• Original Assignee: MCNC, Inc.
• Inventors: Jones, Gary W., Sune, Ching-Tzong
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): Patel, Ashok
• Application Number:
  US08/298,065
• Time in Patent Office: 469 Days
• Field of Search: 313/309, 313/311, 313/312, 313/336, 313/351, 313/495, 313/497, 315/169.4, 345/37, 345/41, 345/47, 345/60
• US Class Current: 313/309
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 3/021 Electron guns using a field emission, photo emission, or secondary emission electron source
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitting electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.

Claims

1. A microelectronic field emitter comprising:

a substrate;

an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a resistive bottom portion adjacent said substrate and a conductive top portion opposite said substrate;

an electron emitting element on said conductive top portion;

an insulating layer on said substrate, extending adjacent said wall; and

at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.

2. The microelectronic field emitter of claim 1 wherein said resistive bottom portion comprises gold-doped amorphous silicon.

3. The microelectronic field emitter of claim 2 wherein said conductive top portion comprises titanium.

4. The microelectronic field emitter of claim 1 wherein said at least one electrode on said insulating layer further extends beyond said insulating layer, to overhang said insulating layer adjacent said electron emitting element.

5. The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.

6. The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a layer of low work function material on said conductive top portion.

7. The microelectronic field emitter of claim 1 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.

8. The microelectronic field emitter of claim 1 further comprising a coating layer on said wall.

9. The microelectronic field emitter of claim 1 further comprising an envelope over said electron emitting element, and spaced therefrom, for encapsulating said emitter.

10. The microelectronic field emitter of claim 9 wherein said envelope includes at least one electrical device comprising an active device, collector, interconnect or display grid.

11. The microelectronic field emitter of claim 9 wherein said envelope includes at least one electrical connection to said at least one electrode.

12. The microelectronic field emitter of claim 9 wherein said envelope includes at least one insulating layer and at least one conductive layer therein.

13. The microelectronic field emitter of claim 1 wherein said field emitter further comprises an address line at the base of said column, adjacent said bottom resistive portion.

14. The microelectronic field emitter of claim 1 wherein said at least one electrode comprises first and second conductive portions which are electrically insulated from one another.

15. A microelectronic field emitter array comprising:

a substrate;

an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a conductive top portion opposite said substrate and a resistive bottom portion adjacent said substrate;

an electron emitting element on said each top portion;

an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls;

an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and

an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.

16. The microelectronic field emitter of claim 15 wherein said resistive bottom portion comprises gold-doped amorphous silicon.

17. The microelectronic field emitter of claim 16 wherein said conductive top portion comprises titanium.

18. The microelectronic field emitter of claim 15 wherein said extraction electrode on said insulating layer further extends beyond said insulating layer to overhang said insulating layer, adjacent said electron emission surface.

19. The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.

20. The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a layer of low work function material on said conductive top portion.

21. The microelectronic field emitter of claim 15 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.

22. The microelectronic field emitter of claim 15 further comprising a coating layer on said walls, between said insulating layer and said walls.

23. The microelectronic field emitter of claim 15 further comprising an envelope over said field emitter array, and spaced therefrom, for encapsulating said field emitting array.

24. The microelectronic field emitter of claim 23 wherein said envelope includes at least one electrical device comprising an active device, collector, interconnect or display grid.

25. The microelectronic field emitter of claim 23 wherein said envelope further comprises a plurality of partitions therein, for forming a plurality of encapsulation chambers.

34. The microelectronic field emitter of claim 23 wherein said envelope includes at least one electrical connection to said at least one electrode.

26. A microelectronic field emitter comprising:

a substrate;

an elongated vertical pillar on said substrate, extending therefrom, said pillar having a wall, a top portion comprising an electron emitting element, a resistive bottom portion adjacent said substrate and a conductive intermediate portion between said resistive bottom portion and said top portion;

an insulating layer on said substrate, extending adjacent said wall; and

at least one electrode on said insulating layer, extending proximate to said electron emitting element, for extracting electrons therefrom.

27. The microelectronic field emitter of claim 26 wherein said resistive bottom portion comprises gold-doped amorphous silicon.

28. The microelectronic field emitter of claim 27 wherein said conductive intermediate portion comprises titanium.

29. The microelectronic field emitter of claim 26 wherein said at least one electrode on said insulating layer further extends beyond said insulating layer, to overhang said insulating layer adjacent said electron emitting element.

30. The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.

31. The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a layer of low work function material.

32. The microelectronic field emitter of claim 26 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.

33. The microelectronic field emitter of claim 26 further comprising an envelope over said electron emitting element, and spaced therefrom, for encapsulating said emitter.

35. The microelectronic field emitter of claim 33 wherein said envelope includes at least one insulating layer and at least one conductive layer therein.

36. The microelectronic field emitter of claim 26 wherein said field emitter further comprises an address line at the base of said column, adjacent said bottom resistive portion.

37. The microelectronic field emitter of claim 26 wherein said at least one electrode comprises first and second conductive portions which are electrically insulated from one another.

38. A microelectronic field emitter array comprising:

a substrate;

an array of elongated vertical pillars on said substrate, orthogonally extending therefrom, each pillar having a wall, a top portion comprising an electron emitting element, a conductive intermediate portion between said top portion and said substrate and a resistive bottom portion between said intermediate portion and said substrate;

an insulating layer on said substrate, between said vertical pillars, extending adjacent said walls;

an extraction electrode on said insulating layer, extending parallel to said substrate, and proximate to said electron emitting element; and

an emitter address line electrode adjacent said resistive bottom portion and electrically connected thereto, extending parallel to said substrate.

39. The microelectronic field emitter of claim 38 wherein said resistive bottom portion comprises gold-doped amorphous silicon.

40. The microelectronic field emitter of claim 39 wherein said conductive intermediate portion comprises titanium.

41. The microelectronic field emitter of claim 38 wherein said extraction electrode on said insulating layer further extends beyond said insulating layer to overhang said insulating layer, adjacent said electron emitting element.

42. The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a conical, pyramidal or linear pointed tip.

43. The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a layer of low work function material.

44. The microelectronic field emitter of claim 38 wherein said electron emitting element comprises a cap of low work function material, for emitting electrons from an edge thereof.

45. The microelectronic field emitter of claim 38 further comprising an envelope over said field emitter array, and spaced therefrom, for encapsulating said field emitting array.

46. The microelectronic field emitter of claim 45 wherein said cover further comprises a plurality of partitions therein, for forming a plurality of encapsulation chambers.