Cathode

• US 5,475,281 A
• Filed: 03/30/1995
• Issued: 12/12/1995
• Est. Priority Date: 02/25/1991
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Heijboer, Willem L. C. M.
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): Patel, Ashok
• Application Number:
  US08/415,025
• Time in Patent Office: 257 Days
• Field of Search: 313/411, 313/441, 313/446, 313/458, 313/309, 313/310, 313/337, 313/346 R, 313/346 DC, 313/351, 313/270, 313/409, 313/271, 313/292, 250/427
• US Class Current: 313/337
• CPC Class Codes: H01J 1/20 Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
• CPC Class Codes: H01J 2201/2878 Thin film or film-like
• CPC Class Codes: H01J 29/04 Cathodes
• CPC Class Codes: Y10S 148/135 Removal of substrate

Abstract

A low-power cathode can be obtained by arranging it on a substrate (1), preferably of silicon, which is entirely or partly removed at the location of the emissive structure (11) by means of, for example, anisotropic etching. Because of its low power, the cathode is particularly suitable for multi-beam applications.

Claims

1. An electron source comprising a substrate having an upper surface and a lower surface, a heating element and an electron emissive material, said substrate having a recess extending from said lower surface towards said upper surface of said substrate and said heating element and said electron emissive material situated above said upper surface situated above said recess.

2. The electron source of claim 1 wherein a comparatively thin barrier layer is provided between said upper surface situated above said recess and said heating element, said barrier layer supporting said heating element and said electron emissive material.

3. The electron source of claim 2 wherein said substrate comprises a semiconductor material and said barrier layer comprises a comparatively thin surface layer adjoining said substrate and having a doping level different than that of the adjoining part of said substrate.

4. The electron source of claim 2 wherein said barrier layer is provided on the upper surface of said substrate and comprises a material relative to which the substrate is selectively etchable.

5. The electron source of claim 4 wherein said barrier layer is a layer of silicon nitride.

6. A cathode ray tube provided with an electron source of of claim 5.

7. An electron source as claimed in claim 5, characterized in that the electron-emissive material comprises at least two members selected from the group consisting of barium carbonate, calcium carbonate, and strontium carbonate.

8. The electron source of claim 1 wherein the electron emissive material is provided as an emission layer on said heating element.

9. A cathode ray tube provided with an electron source of claim 8.

10. The electron source of claim 8 wherein a metal cathode support layer is provided between said emission layer and said heating element and a protective layer of silicon nitride is provided between said metal cathode support layer and said heating element.

11. The electron source of claim 10 wherein a grid electrode is provided on said protective layer.

12. A cathode ray tube provided with an electron source of claim 11.

13. An electron source as claimed in claim 10, characterized in that the electron-emissive material comprises at least two members selected from the group consisting of barium carbonate, calcium carbonate, and strontium carbonate.