Method of manufacturing a bonded semiconductor substrate and a dielectric isolated bipolar transistor

• US 5,476,813 A
• Filed: 11/14/1994
• Issued: 12/19/1995
• Est. Priority Date: 11/15/1993
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Naruse, Hiroshi
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Pham, Long
• Application Number:
  US08/340,361
• Time in Patent Office: 400 Days
• Field of Search: 148/DIG. 12, 148/DIG. 51, 148/DIG. 58, 148/DIG. 150, 437/62, 437/947, 437/132, 437/247, 437/228, 437/31, 156/630, 156/662, 257/586
• US Class Current: 438/311
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 148/051 Etching
• CPC Class Codes: Y10S 148/058 Ge germanium
• CPC Class Codes: Y10S 148/15 Silicon on sapphire SOS
• CPC Class Codes: Y10S 438/97 Specified etch stop material
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

In a method of manufacturing a bonded semiconductor substrate, a SiGe mixed crystal layer, a silicon layer containing N-type impurities, a SiGe mixed crystal layer containing N-type impurities of high concentration, and a silicon layer containing N-type impurities of high concentration are formed in this order on a top surface of a silicon substrate by an epitaxial growth process to form a first semiconductor substrate. A silicon oxide film is formed on a surface of a silicon substrate to form a second semiconductor substrate. The first and second semiconductor substrates are bonded to each other by heat treatment, with their top surfaces contacting each other. The first semiconductor substrate is etched from the back surface thereof until the SiGe mixed crystal layer is exposed, and the SiGe mixed crystal layer is etched until the silicon layer containing N-type impurities is exposed. This method prevents the thickness of the element forming layer from varying.

Claims

1. A method of manufacturing a bonded semiconductor substrate, comprising the steps of:

providing a first semiconductor substrate of silicon, having a top surface and a back surface, said top surface having thereon a SiGe mixed crystal layer, a silicon layer containing N-type impurities, a SiGe mixed crystal layer containing N-type impurities which are formed in order by epitaxial growth process;

providing a second semiconductor substrate of a silicon substrate, having a top surface;

providing a silicon oxide film on at least one of said top surface of said first semiconductor substrate and said top surface of said second semiconductor substrate;

contacting said top surfaces of said first and second semiconductor substrates, at least one of which being provided with said silicon oxide film, and bonding said first and second semiconductor substrates to each other by heat treatment;

etching said first semiconductor substrate from said back surface until said SiGe mixed crystal layer is exposed; and

etching said SiGe mixed crystal layer until said silicon layer containing N-type impurities is exposed.

3. A manufacturing method according to claim 1, in which said step of forming a silicon oxide film comprises a step of forming the silicon oxide film on said top surface of said first semiconductor substrate.

4. A manufacturing method according to claim 1, in which said step of forming a silicon oxide film comprises a step of forming the silicon oxide film on said top surface of said second semiconductor substrate.

5. A manufacturing method according to claim 1, in which said step of forming a silicon oxide film comprises a step of forming the silicon oxide film on said top surface of said first semiconductor substrate and the silicon oxide film on said top surface of said second semiconductor substrate.

6. A manufacturing method according to claim 1, in which said step of forming a silicon oxide film comprises a step of forming the silicon oxide film by thermal oxidation.

7. A manufacturing method according to claim 1, in which said step of forming a silicon oxide film comprises a step of forming the silicon oxide film by chemical vapor deposition.

8. A manufacturing method according to claim 1, in which said step of etching said first semiconductor substrate from said back surface comprises a first step of etching the first semiconductor substrate from the back surface by polishing to an extent that said SiGe mixed crystal layer is not exposed and a second step of etching the first semiconductor substrate by etching to expose said SiGe layer.

9. A manufacturing method according to claim 8, in which said SiGe mixed crystal layer is used as a stopper in said step of etching said first semiconductor substrate.

10. A manufacturing method according to claim 8, in which said second step of etching said first semiconductor substrate comprises wet etching.

11. A manufacturing method according to claim 8, in which said second step of etching said first semiconductor substrate comprises dry etching.

12. A manufacturing method according to claim 10, in which said wet etching in said second step of etching said first semiconductor substrate is carried out by using a composite solution of KOH, K₂ Cr₂ O₇ and Propanol.

13. A manufacturing method according to claim 8, in which said SiGe mixed crystal layer containing N type impurities is used as a stopper in said step of etching said SiGe mixed crystal layer.

14. A manufacturing method according to claim 8, in which said step of etching the SiGe mixed crystal layer is carried out by wet etching.

15. A manufacturing method according to claim 8, in which said step of etching the SiGe mixed crystal layer is carried out by dry etching.

16. A manufacturing method according to claim 10, in which said wet etching of the SiGe mixed crystal layer is carried out by using a composite solution of HF, H₂ O₂ and COOH.

2. A method of manufacturing a dielectric isolated bipolar transistor, comprising the steps of:

providing a first semiconductor substrate of silicon;

having a top surface and a back surface, said top surface having thereon a first SiGe mixed crystal layer containing N-type impurities, a first silicon layer containing N-type impurities, a second SiGe mixed crystal layer containing N-type impurities, and a second silicon layer containing N-type impurities, which are formed in order by epitaxial growth;

providing a second semiconductor substrate of silicon, having a top surface;

providing a silicon oxide film on at least one of said top surface of said first semiconductor substrate and said top surface of said second semiconductor substrate;

contacting said top surfaces of said first and second semiconductor substrates, at least one of which being provided with said silicon oxide film, and bonding said first and second semiconductor substrates to each other by high-temperature heat treatment;

etching said first semiconductor substrate from said back surface until said first SiGe mixed crystal layer is exposed;

etching said first SiGe mixed crystal layer until said first silicon layer containing N-type impurities is exposed;

providing first insulation films on portions of said first silicon layer containing N-type impurities, said portions serving as a base/emitter and a collector;

etching said first silicon layer containing N-type impurities, using said first insulation films as masks and using said second SiGe mixed crystal layer containing N-type impurities of high concentration as an etching stopper;

providing a second insulation film on a region other than an element isolation region;

etching said second SiGe mixed crystal layer containing N-type impurities and said second silicon layer containing N-type impurities, using said second insulation film as a mask; and

removing said first and second insulation films, providing a third insulation film over said first semiconductor substrate, and etching said third insulation film until said portions serving as the base/emitter and the collector are exposed.

17. A manufacturing method according to claim 2, in which said first insulation film comprises an SiO₂ film.

18. A manufacturing method according to claim 2, in which said first insulation film comprises an SiN film.

19. A manufacturing method according to claim 17, in which said SiO₂ film is formed by chemical vapor deposition.

20. A manufacturing method according to claim 18, in which said SiN film is formed by chemical vapor deposition.

21. A manufacturing method according to claim 2, in which said step of forming said first and second Si layer containing N type impurities is carried out by reactive ion implantation.

22. A manufacturing method according to claim 2, in which said step of forming said first and second SiGe mixed crystal layers containing N type impurities and said first and second Si layer containing N type impurities is carried out by reactive ion implantation.

23. A manufacturing method according to claim 2, in which said step of etching said third insulation film is carried out by etching back.

24. A manufacturing method according to claim 2, in which said step of etching said third insulation film is carried out by polishing.