Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
First Claim
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1. An FET switch for microwave signals, comprising:
- a first transmission path for receiving signals having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals of a higher power level than the received signals of said first transmission path having at least one FET with a negative threshold voltage serially connected in said path, said at least one serially connected FET of each path for switching signal transmission through the respective said first transmission path and said second transmission path, the negative threshold voltage of each of said at least one serially connected FET of said second transmission path having a greater negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path.
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Abstract
An FET switch used for switching between a first transmission path includes a plurality of FETs for the transmission of a low power signal received at an antenna and a second transmission path including a plurality of FETs for the transmission of a higher power signal to the antenna, wherein the first transmission path and the second transmission path have FET circuits of configurations different from each other and/or employ FETs of different characteristics.
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Citations
11 Claims
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1. An FET switch for microwave signals, comprising:
a first transmission path for receiving signals having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals of a higher power level than the received signals of said first transmission path having at least one FET with a negative threshold voltage serially connected in said path, said at least one serially connected FET of each path for switching signal transmission through the respective said first transmission path and said second transmission path, the negative threshold voltage of each of said at least one serially connected FET of said second transmission path having a greater negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An FET antenna switch for microwave signal, comprising:
a first transmission path for receiving signals received by the antenna having at least one FET with a negative threshold voltage serially connected in said path and a second transmission path for transmitting signals to the antenna of a higher power level than the received signals of said first transmission path and having at least one FET with a negative threshold value serially connected in said path, said at least one FET of each of said first and second transmission path for respectively switching signal transmission through said first transmission path for receiving and said second transmission path for transmitting, the negative threshold voltage of each said at least one serially connected FET of said second transmission path for transmitting being of a higher negative value than the negative threshold voltage of each said at least one serially connected FET of said first transmission path for receiving. - View Dependent Claims (8, 9, 10, 11)
Specification