Multi-function differential pressure sensor with thin stationary base
First Claim
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1. A differential pressure sensor comprising:
- a semiconductor chip formed of a single chip and having opposite first and second surfaces, said semiconductor chip including a thin wall portion and a thick wall portion formed about said thin wall portion, said thin wall portion being responsive to a difference between first and second pressures respectively applied to said first and second surfaces of said semiconductor chip;
differential pressure detection means provided on at least one surface of said semiconductor chip for detecting the difference between the first and second pressures; and
a stationary base having a joining surface, another surface opposite to said joining surface and a passage, said stationary base being joined at said joining surface to said thick wall portion of said semiconductor chip to fixedly secure said semiconductor chip, said stationary base, in an area of said joining surface, being smaller in thickness in a same direction than said thick wall portion of said semiconductor chip, said passage being formed in said opposite surface of said stationary base to introduce thereto said first pressure being applied to said first surface of said semiconductor chip.
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Abstract
A multi-function differential pressure sensor includes a semiconductor chip, a stationary base having a joining portion joined to a thick wall portion of the semiconductor chip, and a housing joined to the stationary base. The semiconductor chip is provided with a differential pressure detection unit, a static pressure detection unit, and a temperature detection unit. The joining portion of the stationary base is not thicker than the semiconductor chip. The stationary base has one or more thin wall portions located, in a plan view, within a circular pressure sensitive diaphragm of the semiconductor chip.
20 Citations
4 Claims
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1. A differential pressure sensor comprising:
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a semiconductor chip formed of a single chip and having opposite first and second surfaces, said semiconductor chip including a thin wall portion and a thick wall portion formed about said thin wall portion, said thin wall portion being responsive to a difference between first and second pressures respectively applied to said first and second surfaces of said semiconductor chip; differential pressure detection means provided on at least one surface of said semiconductor chip for detecting the difference between the first and second pressures; and a stationary base having a joining surface, another surface opposite to said joining surface and a passage, said stationary base being joined at said joining surface to said thick wall portion of said semiconductor chip to fixedly secure said semiconductor chip, said stationary base, in an area of said joining surface, being smaller in thickness in a same direction than said thick wall portion of said semiconductor chip, said passage being formed in said opposite surface of said stationary base to introduce thereto said first pressure being applied to said first surface of said semiconductor chip. - View Dependent Claims (2, 3)
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4. A differential pressure sensor comprising:
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a semiconductor chip formed of a single chip and having opposite first and second surfaces, said semiconductor chip including a thin wall portion and a thick wall portion formed about said thin wall portion, said thin wall portion being responsive to a difference between first and second pressures respectively applied to said first and second surfaces of said semiconductor chip; differential pressure detection means provided on at least one surface of said semiconductor chip for detecting the difference between the first and second pressures; and a stationary base having a joining surface, another surface opposite to said joining surface and a passage, said stationary base being joined at said joining surface to said thick wall portion of said semiconductor chip to fixedly secure said semiconductor chip, said stationary base, in an area of said joining surface, being smaller in thickness than said thick wall portion of said semiconductor chip, said passage being formed in said opposite surface of said stationary base to introduce thereto said first pressure being applied to said first surface of said semiconductor chip, wherein said stationary base includes a hollow portion and an outer peripheral portion surrounding said hollow portion, said joining surface of said stationary base for said semiconductor, chip is formed on said outer peripheral portions, and said hollow portion is formed through said stationary base to introduce said second pressure to be applied to said semiconductor chip, wherein said stationary base further includes a thin wall portion in said outer peripheral portion, and said thin wall portion of said stationary base is smaller in outer diametrical size than said thin wall portion of said semiconductor chip and is situated such that, as viewed from above said semiconductor chip, said thin wall portion of said stationary base is within said thin wall portion of said semiconductor chip.
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Specification
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Current AssigneeHitachi, Ltd.
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Original AssigneeHitachi, Ltd.
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InventorsNagasu, Akira, Yamamoto, Yoshimi, Tobita, Tomoyuki, Aoki, Ken'ichi
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Primary Examiner(s)Chilcot, Richard
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Assistant Examiner(s)FELBER, JOSEPH LEON
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Application NumberUS07/870,328Time in Patent Office1,348 DaysField of Search73/721, 73/720, 73/726, 73/727, 73/756, 73/DIG. 4, 338/4US Class Current73/716CPC Class CodesG01L 19/0084 to the outside of the housi...G01L 19/0092 Pressure sensor associated ...G01L 19/02 Arrangements for preventing...G01L 19/04 Means for compensating for ...G01L 19/146 using flexible element betw...G01L 19/147 Details about the mounting ...
