Double rim phase shifter mask

• US 5,478,678 A
• Filed: 10/05/1994
• Issued: 12/26/1995
• Est. Priority Date: 10/05/1994
• Status: Expired due to Term

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Yang, Ming-Tzong, Pan, Hong-Tsz
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US08/318,426
• Time in Patent Office: 447 Days
• Field of Search: 430/5, 430/322, 430/324, 430/394
• US Class Current: 430/5
• CPC Class Codes: G03F 1/29 Rim PSM or outrigger PSM; Preparation thereof

Abstract

This invention describes the fabrication and use of a double rim phase shifter mask comprised of patterned layers of phase shifting material, partially transmitting material, and opaque material formed on a transparent substrate. Since the partially transmitting material is used as a rim at the pattern edge the light intensity transmitted to the wafer is not limited by the transmitting percentage of the partially transmitting material. The mask is self aligned and is readily manufacturable. Image resolution and depth of focus is improved over other photomasks.

Claims

1. A double rim phase shifter mask, comprising:

a transparent substrate;

a patterned layer of partially transmitting material having pattern edges formed on said transparent substrate;

a patterned layer of phase shifting material having pattern edges formed on said patterned layer of partially transmitting material wherein said pattern edges of said patterned layer of phase shifting material extend beyond said patterned edges of said patterned layer of partially transmitting material; and

a patterned layer of opaque material having pattern edges formed on said patterned layer of phase shifting material wherein said pattern edges of said patterned layer of phase shifting material extend beyond said pattern edges of said patterned layer of opaque material and said pattern edges of said patterned layer of partially transmitting material extend beyond said pattern edges of said patterned layer of opaque material.

2. The double rim phase shifter mask of claim 1 wherein said transparent substrate is quartz with a thickness of between about 1 and 6 millimeters.

3. The double rim phase shifter mask of claim 1 wherein said phase shifter material is spin-on-glass.

4. The double rim phase shifter mask of claim 3 wherein said spin-on-glass has a thickness of between about 3800 and 4200 Angstroms.

5. The double rim phase shifter mask of claim 1 wherein said opaque material is chromium with a thickness of between about 1000 and 3000 Angstroms.

6. The double rim phase shifter mask of claim 1 wherein said partially transmitting material is thin chromium with a thickness of between about 100 and 500 Angstroms.

7. The double rim phase shifter mask of claim 1 wherein said pattern edges of said patterned layer of phase shifting material extend beyond said pattern edges of said patterned layer of partially transmitting material by between about 0.25 and 0.5 microns.

8. The double rim phase shifter mask of claim 1 wherein said pattern edges of said patterned layer of phase shifting material extend beyond said pattern edges of said patterned layer of opaque material by between about 0.5 and 1.0 microns.

9. The double rim phase shifter mask of claim 1 wherein said patterned layer of partially transmitting material, said patterned layer of phase shifting material, and said patterned layer of opaque material are formed using a pattern formed in a single photoresist mask, whereby said patterned layer of partially transmitting material, said patterned layer of phase shifting material, and said patterned layer of opaque material are all aligned to said pattern formed in said single photoresist mask.

10. A method of forming a double rim phase shifter mask, comprising the steps of:

providing a transparent substrate;

forming a layer of partially transmitting material on said transparent substrate;

forming a layer of phase shifting material on said layer of partially transmitting material;

forming a layer of opaque material on said layer of phase shifting material;

forming a layer of photoresist on said layer of opaque material;

forming a photoresist mask by exposing and developing a first pattern having pattern edges in said layer of photoresist;

forming a second pattern having pattern edges in said layer of opaque material by means of isotropically etching said layer of opaque material through said photoresist mask so that said pattern edges of said first pattern in said layer of photoresist extend beyond said pattern edges in said second pattern in said layer of opaque material;

forming a third pattern having pattern edges in said layer of phase shifting material by means of vertically anisotropically etching said layer of phase shifting material through said photoresist mask so that said pattern edges of said first pattern in said layer of photoresist are directly above said pattern edges of said third pattern in said layer of phase shifting material;

forming a fourth pattern having pattern edges by means of isotropically etching said layer of partially transmitting material through said photoresist mask so that said pattern edges of said first pattern in said layer of photoresist extend beyond said pattern edges of said fourth pattern in said layer of partially transmitting material; and

stripping said layer of photoresist.

11. The method of claim 10 wherein said transparent substrate is quartz with thickness between about 1 and 6 millimeters.

12. The method of claim 10 wherein said phase shifter material is spin-on-glass.

13. The method of claim 12 wherein said spin-on-glass has a thickness between about 3800 and 4200 Angstroms.

14. The method of claim 12 wherein said spin-on-glass is vertically anisotropically etched using reactive ion etching.

15. The method of claim 10 wherein said opaque material is chromium with thickness between about 1000 and 3000 Angstroms.

16. The method of claim 15 wherein said chromium is isotropically etched using a ceric ammonium and perchloric acid solution.

17. The method of claim 10 wherein said partially transmitting material is thin chromium with a thickness of between about 100 and 500 Angstroms.

18. The method of claim 17 wherein said thin chromium is isotropically etched using a ceric ammonium and perchloric acid solution.

19. The method of claim 10 wherein said pattern edges of said third pattern in said layer of phase shifting material extend beyond said pattern edges of said fourth pattern in said layer of partially transmitting material by between about 0.25 and 0.5 microns.

20. The method of claim 10 wherein said pattern edges of said third pattern in said layer of phase shifting material extend beyond said pattern edges of said second pattern in said layer of opaque material by between about 0.5 and 1.0 microns.

21. The method of claim 10 wherein said second pattern, said third pattern, and said fourth pattern are all aligned to said first pattern in said photoresist mask.