Electrically programmable memory device with improved dual floating gates

• US 5,483,487 A
• Filed: 04/24/1995
• Issued: 01/09/1996
• Est. Priority Date: 07/05/1994
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Sung-Mu, Hsu
• Primary Examiner(s): NGUYEN, TAN
• Application Number:
  US08/428,765
• Time in Patent Office: 260 Days
• Field of Search: 365/185, 365/900, 257/315, 257/314, 257/316, 257/317, 257/321, 257/390, 257/397
• US Class Current: 365/185.33
• CPC Class Codes: H01L 29/4232 with insulated gate
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

An improved method and structure for producing electrically programmable read only memory devices (EPROM'"'"'s) and flash EPROM'"'"'s having dual sidewall floating gates is provided. A conformal polysilicon layer is formed over a masking line with vertical sidewalls. The conformal layer is anisotrophically etched to form dual floating gates on the sidewalls of the masking line. The masking lines is removed. Source and drain regions are formed in-between and on either side of the dual gates. An insulating layer is formed over the dual gates and substrate surface. A control gate is formed over the dual gates. Word lines and other electrical contracts are formed to complete the EPROM or flash EPROM device.

Claims

1. An improved erasable programmable read only memory device, having dual sidewall floating gates comprising:

a tunnel oxide layer on the surface of a monocrystalline silicon semiconductor substrate having a background impurity of a first conductivity type;

spaced field oxide regions on the substrate surface;

spaced apart dual floating gates on the substrate surface between the field oxide regions;

a first drain region, second drain region and central source regions spaced apart of a second conductivity type at the substrate surface, said first drain region and second drain region spaced apart by the dual floating gates structure and the central source region, the central source region located between the dual floating gates;

an insulating layer on the substrate surface, on the tunnel oxide layer over the source region and drain region, and on the dual floating gates;

a conductive layer on the second insulating layer thereby acting as the control gate;

and electrical contacts and metallurgy lines with appropriate passivation, and connecting the source and drain regions and gate elements to form an erasable programmable memory device.

2. The method of claim 1 wherein the first doped regions for threshold voltage adjustment have a dopant concentration in the range of 1E16 to 1E18 atoms/cm³.

3. The device of claim 1 which further includes second doped regions provided in the substrate that only partially underlie said floating gates adjacent the drain regions, said second doped regions having impurities of first conductivity type.

4. The method of claim 1 wherein the floating gates have a width in the range of 0.15 to 0.5 microns.

5. The method of claim 1 wherein the source and drain regions have a concentration in the range of 1E19 to 1E21 atoms/cm³.

6. The method of claim 1 wherein the second insulating layer is composite layer with a sandwich structure of silicon oxide, silicon nitride and silicon oxide.