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Pad condition and polishing rate monitor using fluorescence

  • US 5,483,568 A
  • Filed: 11/03/1994
  • Issued: 01/09/1996
  • Est. Priority Date: 11/03/1994
  • Status: Expired due to Term
First Claim
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1. A method for determining the polishing rate during abrasive polishing of the surface of a semi-conductor wafer in which a slurry including a liquid having a suspension of abrasive particles is sprayed upon a surface of a rotating polishing pad and a rotating semi-conductor wafer is brought into contact with the surface of the polishing pad, a portion of the surface of the pad exposed during contact, the method comprising:

  • directing electromagnetic radiation onto the exposed surface of the pad;

    detecting the intensity of the electromagnetic radiation produced due to the electromagnetic radiation being directed upon the pad; and

    converting the detected intensity into a polishing rate of removal of the surface of the wafer by utilizing a predetermined functional relationship between the intensity and the polishing rate.

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