Optical device with substrate and waveguide structure having thermal matching interfaces

• US 5,483,613 A
• Filed: 08/16/1994
• Issued: 01/09/1996
• Est. Priority Date: 08/16/1994
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: AT&T Corporation (AT&T, Inc.)
• Inventors: Bruce, Allan J., Presby, Herman M.
• Primary Examiner(s): Ullah, Akm E.
• Application Number:
  US08/291,387
• Time in Patent Office: 511 Days
• Field of Search: 385/130, 385/129, 385/131, 385/132
• US Class Current: 385/129
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 6/105 having optical polarisation effects
• CPC Class Codes: G02B 6/126 using polarisation effects G02B6/1226 takes precedence

Abstract

The present invention provides polarization-independent optical devices by reducing or eliminating strain-induced birefrigence associated with prior device structures. In a first embodiment, an optical device is produced comprising a doped silica substrate having a coefficient of thermal expansion between 8×10^-7 ° C.^-1 and 15×10^-7 °C.^-1. On the doped silica substrate is formed a doped silica waveguiding structure having a coefficient of thermal expansion between 8×10^-7 ° C.^-1 and 15×10^-7 ° C.^-1. Alternatively, the coefficient of thermal expansion of the doped silica substrate is selected to be approximately 90% to 110% of the coefficient of thermal expansion of the doped silica waveguiding structure. In another aspect, the present invention provides an optical device comprising a doped silica substrate having a doping gradient from a lower surface to an upper surface. The doping level at the upper surface has a coefficient of thermal expansion approximating the coefficient of thermal expansion of a doped silica waveguiding structure formed thereon.

Claims

1. An optical device comprising:

a doped silica substrate, the doped silica substrate having a coefficient of thermal expansion between 8×

10^-7 °

C.^-1 and 15×

10^-7 °

C.^-1 ;

a doped silica waveguiding structure formed on the doped silica substrate, the doped silica waveguiding structure having a coefficient of thermal expansion between 8 ×

10^-7 °

C.^-1 and 15×

10^-7 °

C.^-1 ; and

a cladding layer formed on the doped silica waveguiding structure.

2. An optical device according to claim 1 wherein the doped silica includes a dopant selected from fluorine, phosphorus, titanium, and mixtures thereof.

3. An optical device according to claim 1 wherein the optical device is selected from optical filters, multiplexers, demultiplexers, beam splitters, and optical taps.

4. An optical device according to claim 1 wherein the refractive index of the doped silica substrate is selected such that the doped silica substrate is a lower cladding layer for the waveguiding structure.

5. An optical device according to claim 1 wherein the doped silica substrate has a thickness of approximately 0.5-1.0 mm.

6. An optical device comprising:

a doped silica substrate having a first coefficient of thermal expansion;

a doped silica waveguiding structure formed on the doped silica substrate, the doped silica waveguiding structure having a second coefficient of thermal expansion, the first coefficient of thermal expansion being approximately 90% to 110% of the second coefficient of thermal expansion; and

a cladding layer formed on the doped silica waveguiding structure.

7. An optical device according to claim 6 wherein the doped silica includes a dopant selected from fluorine, phosphorus, titanium, and mixtures thereof.

8. An optical device according to claim 6 wherein the optical device is selected from optical filters, multiplexers, demultiplexers, beam splitters, and optical taps.

9. An optical device according to claim 6 wherein the refractive index of the doped silica substrate is selected such that the doped silica substrate is a lower cladding layer for the waveguiding structure.

10. An optical device according to claim 6 wherein the doped silica substrate has a thickness of approximately 0.5-1.0 mm.

11. An optical device comprising:

a doped silica substrate, the doped silica substrate having a doping gradient from a lower surface to an upper surface, the doping level at the upper surface having associated therewith a first coefficient of thermal expansion;

a doped silica waveguiding structure formed on the upper surface of the doped silica substrate, the doped silica waveguiding structure having a second coefficient of thermal expansion, the first coefficient of thermal expansion being approximately 90% to 110% of the second coefficient of thermal expansion; and

a cladding layer formed on the doped silica waveguiding structure.

12. An optical device according to claim 11 wherein the doped silica includes a dopant selected from fluorine, phosphorus, titanium, and mixtures thereof.

13. An optical device according to claim 11 wherein the optical device is selected from optical filters, multiplexers, demultiplexers, beam splitters, and optical taps.

14. An optical device according to claim 11 wherein the refractive index of the upper surface of the doped silica substrate is selected such that the upper surface of the doped silica substrate is a lower cladding layer for the waveguiding structure.

15. An optical device according to claim 11 wherein the doped silica substrate has a thickness of approximately 0.5-1.0 mm.