Method of making a rim-type phase-shift mask

• US 5,484,672 A
• Filed: 01/25/1995
• Issued: 01/16/1996
• Est. Priority Date: 11/13/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Bajuk, Stanislav P., Smith, Edward T., O'Grady, David S.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US08/378,767
• Time in Patent Office: 356 Days
• Field of Search: 430/5, 430/22, 430/269, 430/311, 430/312, 430/313, 430/321, 430/396
• US Class Current: 430/5
• CPC Class Codes: G03F 1/29 Rim PSM or outrigger PSM; Preparation thereof
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: H01L 21/0275 using lasers

Abstract

A method of forming rim type phase-shift lithography mask (140) involving backside overexposure of a positive resist layer (130) overlying a patterned light-blocking layer (120). By subjecting the resist layer to electromagnetic radiation (132) (e.g., broad band UV) transmitted via the backside (115) of the mask substrate (112), portions (134) of the resist layer extending from peripheral edges of the light blocking layer inwardly a selected distance are activated. After developing activated portions of the resist layer, the "pull back" of the resist layer is transferred to the underlying light blocking layer by anisotropically etching portions of the light blocking layer not covered by the resist layer, thereby forming the desired rim structure.

Claims

1. A method of forming a rim-type phase-shift mask designed for use in a phase-shift lithography process, the method comprising the steps of:

(a) providing a substrate having opposing first and second surfaces, said substrate being made from a material through which electromagnetic radiation of a predetermined frequency range may be transmitted, said first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of said predetermined frequency range;

(b) forming a plurality of openings extending through said first layer so as to expose underlying portions of said substrate;

(c) depositing a layer of resist on said first layer; and

(d) exposing said second surface of said substrate to electromagnetic radiation having a frequency range in said predetermined frequency range for a period of time sufficient to permit said electromagnetic radiation to propagate through said substrate and activate those portions of said layer of resist on said first layer extending from peripheral edges of said first layer inwardly a distance of at least about 0.05 micron, as measured along an axis extending parallel to said first surface of said substrate.

2. A method according to claim 1, further comprising the step, following said step (d), of:

(e) removing those portions of said layer of resist activated by said electromagnetic radiation.

3. A method according to claim 2, further comprising the step, following said step (e), of:

(f) removing those portions of said first layer not covered by said layer of resist remaining after said step (e) is completed.

4. A method according to claim 3, further comprising the step, after said step (e) and before said step (f), of forming recesses of selected configuration and depth in those portions of said substrate not covered by said first layer.

5. A method according to claim 4, wherein said forming step is performed so that sidewalls in said substrate defining said recesses extend substantially perpendicular to said first surface of said substrate.

6. A method according to claim 4, wherein said depth of said recesses is selected as a function of the refractive index of said substrate and the wavelength of electromagnetic radiation to be used in the phase-shift lithography process.

7. A method according to claim 1, further comprising the step, after said step (b) and before said step (c), of forming recesses of selected configuration and depth in those portions of said substrate not covered by said first layer.

8. A method according to claim 1, wherein said resist deposited in said step (c) is a positive resist.

9. A method of forming a rim-type phase-shift mask designed for use in a phase-shift lithography process, the method comprising the steps of:

(a) providing a substrate having opposing first and second surfaces, said substrate being made from a material through which electromagnetic radiation of a predetermined frequency range may be transmitted, said first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of said predetermined frequency range;

(b) forming a plurality of openings in said first layer so as to expose portions of said substrate;

(c) depositing a layer of resist on said first layer and on portions of said substrate exposed through said openings in said first layer;

(d) transmitting electromagnetic radiation having a frequency range in said predetermined frequency range through said substrate via its second surface for a selected period of time so as to cause said electromagnetic radiation to activate portions of said resist layer, wherein said selected period of time is longer than is required to activate those portions of said layer of resist not covering said first layer;

(e) developing said layer of resist for at least a period of time sufficient to remove portions of said layer of resist activated by said electromagnetic radiation; and

(f) removing those portions of said first layer not covered by said layer of resist remaining after said step (e) is completed using an anisotropic etching process.

10. A method according to claim 9, wherein said anisotropic etching process is a reactive ion etching process designed to remove said first layer primarily in a direction extending perpendicular to said first surface of said substrate.

11. A method according to claim 9, wherein said step (e) involves developing said layer of resist for more than the minimum period of time necessary to remove portions of said layer of resist activated by said electromagnetic radiation.

12. A method of forming a self-aligned rim structure on a substrate, the method comprising the steps of:

(a) providing a substrate having opposing first and second surfaces, said substrate being made from a material through which electromagnetic radiation of a predetermined frequency range may be transmitted, said first surface being at least partially covered with a first layer of material that substantially blocks the transmission therethrough of electromagnetic radiation of said predetermined frequency range;

(b) forming a plurality of openings extending through said first layer so as to expose underlying portions of said substrate;

(c) depositing a layer of resist on said first layer and on portions of said substrate exposed through said openings in said first layer; and

(d) removing those portions of said layer of resist (i) on said portions of said substrate exposed through said openings in said first layer and (ii) on said first layer extending from peripheral edges of said first layer inwardly a distance of at least about 0.05 micron, as measured along an axis extending parallel to said first surface of said substrate.

13. A method according to claim 12, further comprising, after said step (d), the step of:

(e) removing peripheral portions of said first layer not covered by remaining portions of said layer of resist.

14. A method according to claim 13, wherein said step (e) involves removing said peripheral portions using an anisotropic etching process.

15. A method according to claim 12, wherein said step (d) comprises the steps of:

(1) exposing said second surface of said substrate to electromagnetic radiation of said predetermined frequency range for a period of time sufficient to permit said electromagnetic radiation to propagate through said substrate and activate (a) portions of said resist layer covering said portions of said substrate exposed through said openings in said first layer and (b) portions of said resist layer extending from peripheral edges of said first layer inwardly a distance of at least about 0.05 micron, as measured along an axis extending parallel to said first surface of said substrate; and

(2) developing said activated portions of said resist layer for at least a period of time sufficient to remove said activated portions.

16. A method according to claim 12, further comprising, after said step (d), the steps of:

(e) forming a plurality of recesses in said substrate, each of which communicates with a respective one of said plurality of openings in said first layer; and

(f) removing peripheral portions of said first layer not covered by remaining portions of said layer of resist.