Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor

• US 5,485,020 A
• Filed: 08/08/1994
• Issued: 01/16/1996
• Est. Priority Date: 03/15/1983
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Osada, Yoshiyuki, Hatanaka, Katsunori, Hirai, Yutaka, Nakagiri, Takashi
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US08/286,989
• Time in Patent Office: 526 Days
• Field of Search: 357/2, 357/4, 357/23.7, 357/59, 357/71, 354/142, 257/49, 257/347, 257/350, 257/351, 257/57, 257/61, 257/66-72, 257/74, 257/75, 257/59
• US Class Current: 257/59
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.

Claims

1. A semiconductor device comprising a thin film transistor and a plurality of wiring parts, said thin film transistor and said wiring parts each having a multilayer structure comprising a semiconductor layer and a contact layer formed on said semiconductor layer, said semiconductor layer and said contact layer of said wiring parts having the same multilayer structure as formed continuously with a source region or a drain region, and

the semiconductor layer of said wiring parts and the semiconductor layer of said thin film transistor being electrically isolated from each other at least in a region other than said wiring parts.

2. A semiconductor device according to claim 1, wherein the semiconductor layer comprises amorphous silicon.

3. A semiconductor device according to claim 1, wherein the contact layer comprises an n⁺ layer.

4. A semiconductor device according to claim 1, wherein at least a part of the semiconductor layer constituting the semiconductor device is crystalline.

5. A semiconductor device according to claim 1, wherein at least a part of the semiconductor layer constituting the semiconductor device is polycrystalline.

6. A semiconductor device according to claim 1, further comprising an insulating layer on said source and drain regions, and wherein, said contact layer is formed to have an edge set back from an end of said semiconductor layer by at least a thickness of said insulating layer.

7. A semiconductor device comprising a thin film transistor and a plurality of wiring parts, said thin film transistor and said wiring parts each comprising a semiconductor layer and a contact layer formed on said semiconductor layer, said semiconductor layer and said contact layer of said wiring parts being formed continuously with a source region or a drain region, and

there being no semiconductor layer extending from said wiring parts or said thin film transistor in a region other than said wiring parts and said thin film transistor,

wherein the contact layer comprises an n⁺ layer and a metallic layer.

17. A semiconductor device according to claim 7, wherein the semiconductor layer comprises amorphous silicon.

18. A semiconductor device according to claim 7, further comprising an insulating layer on said source and drain regions, and wherein, said contact layer is formed to have an edge set back from an end of said semiconductor layer by at least a thickness of said insulating layer.

10. A semiconductor device comprising a thin film transistor and a plurality of wiring parts, said thin film transistor and said wiring parts each having a multilayer structure comprising a semiconductor layer and a contact layer formed on said semiconductor layer so as to have an edge set back from the end of said semiconductor, said semiconductor layer and said contact layer of said wiring parts having the same multilayer structure as formed continuously with a source region or a drain region, and

different portions of said wiring parts being electrically isolated from each other.

11. A semiconductor device according to claim 10, wherein the semiconductor layer comprises amorphous silicon.

12. A semiconductor device according to claim 10, wherein the contact layer comprises an n⁺ layer.

13. A semiconductor device according to claim 10, wherein at least a part of the semiconductor layer constituting the semiconductor device is crystalline.

14. A semiconductor device according to claim 10, wherein at least a part of the semiconductor layer constituting the semiconductor device is polycrystalline.

15. A semiconductor device according to claim 10, further comprising an insulating layer on the source and drain regions and wherein, the set back of the edge is at least a thickness of the insulating layer.

16. A semiconductor device comprising a thin film transistor and a plurality of wiring parts, said thin film transistor and said wiring parts each comprising a semiconductor layer and a contact layer formed on said semiconductor layer so as to have an edge set back from the end of said semiconductor, said semiconductor layer and said contact layer of said wiring parts being formed continuously with a source region or a drain region and extending to other elements of the semiconductor device, and

different portions of said wiring parts being electrically isolated from each other,

wherein the contact layer comprises an n⁺ layer and a metallic layer.

8. A semiconductor device according to claim 16, wherein the semiconductor layer comprises amorphous silicon.

9. A semiconductor device according to claim 16, further comprising an insulating layer on the source and drain regions and wherein, the set back of the edge is at least a thickness of the insulating layer.

19. A semiconductor device which comprises:

a thin film transistor having a semiconductor layer and multilayered source and drain regions provided in contact with said semiconductor layer; and

internal wiring provided as electrically connected to a selected one of said source and drain regions of said thin film transistor and to other elements of the semiconductor device, said internal wiring having a portion adapted to receive external wiring,

at least part of said internal wiring having the same multilayered structure as the selected one of said source and drain regions in contact with said semiconductor layer and being integral with the selected one of said source and drain regions,

said source and drain regions and said part of said internal wiring being formed in such a manner that an edge thereof is set back from an edge of said semiconductor layer.

20. A semiconductor device according to claim 19, wherein at least a part of the semiconductor layer constituting the semiconductor device is crystalline.

21. A semiconductor device according to claim 19, wherein at least a part of the semiconductor layer constituting the semiconductor device is polycrystalline.

22. A semiconductor device according to claim 19, wherein at least a part of the semiconductor layer constituting the semiconductor device is amorphous.

23. A semiconductor device according to claim 19, wherein at least a part of the semiconductor layer constituting the semiconductor device is comprised of silicon.

24. A semiconductor device according to claim 19, wherein said device has an insulating layer provided over said thin film transistor and said internal wiring, and the length of set back is at least the thickness of said insulating layer.

25. A semiconductor device which comprises:

a thin film transistor having a semiconductor layer, multilayered source and drain regions provided on said semiconductor layer, and a gate electrode provided on said source and drain regions with an insulating layer interposed therebetween; and

a wiring formed continued from a selected one of said source and drain regions of said thin film transistor to at least other elements of the semiconductor device,

at least part of said wiring having the same multilayered structure as the selected one of said source and drain regions in contact with said semiconductor layer, and

said source and drain regions and said part of said wiring being formed in such a manner that an edge thereof is set back from an edge of said semiconductor layer.

26. A semiconductor device according to claim 25, wherein at least a part of the semiconductor layer constituting the semiconductor device is crystalline.

27. A semiconductor device according to claim 25, wherein at least a part of the semiconductor layer constituting the semiconductor device is polycrystalline.

28. A semiconductor device according to claim 25, wherein at least a part of the semiconductor layer constituting the semiconductor device is amorphous.

29. A semiconductor device according to claim 25, wherein at least a part of the semiconductor layer constituting the semiconductor device is comprised of silicon.

30. A semiconductor device according to claim 25, wherein the length of set back is at least the thickness of said insulating layer.

31. A semiconductor device according to claim 25 wherein said same multilayered structure is constituted of said semiconductor layer, an n⁺ -layer provided on said semiconductor layer and an electroconductive layer provided on the n⁺ -layer.

32. A semiconductor device according to claim 31, wherein the length of set back is at least the thickness of said insulating layer.

33. A semiconductor device according to claim 31, wherein the edges of said n⁺ -layer and said electroconductive layer are substantially even.

34. A semiconductor device which comprises:

a substrate;

a thin film transistor formed on said substrate, said transistor having a semiconductor layer provided on said substrate, a source region provided on said semiconductor layer having an n+ layer and a conductive layer, a drain region provided on said semiconductor layer having an n+ layer and a conductive layer, an insulating layer provided on said source and drain regions, and a gate electrode provided on said insulating layer at least between said source and drain regions; and

internal wiring formed continued from at least one of said source and drain regions to at least other elements of the semiconductor device and having a semiconductor layer, an n+ layer provided on said semiconductor layer and a conductive layer provided on said n+ layer, said internal wiring having a portion adapted to receive external wiring,

said n+ layer of the internal wiring and said conductive layer of the internal wiring being formed in such a manner that an edge thereof is set back from an edge of said semiconductor layer.

35. A semiconductor device according to claim 34, wherein said device has an insulating layer provided over said thin film transistor and said internal wiring, and the set back is at least a thickness of said insulating layer.