Contactless electrical thin oxide measurements

• US 5,485,091 A
• Filed: 05/12/1995
• Issued: 01/16/1996
• Est. Priority Date: 05/12/1995
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Verkuil, Roger L.
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): DO, DIEP N
• Application Number:
  US08/440,418
• Time in Patent Office: 249 Days
• Field of Search: 324/751, 324/765, 324/452, 324/455, 324/457, 324/716, 324/71.1, 324/72, 324/158.1, 324/501, 324/536
• US Class Current: 324/455
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for measuring the thickness of very thin oxide layers on a silicon substrate. A corona discharge source repetitively deposits a calibrated fixed charge density on the surface of the oxide. The resultant change in oxide surface potential for each charge deposition is measured. By choosing a starting value for an assumed oxide thickness, the approximate change in silicon bandbending per corona discharge step is determined. The cumulative changes in bandbending versus oxide surface potential yields an experimental bandbending versus bias characteristic. A theoretical bandbending versus bias characteristic is established. The experimental and theoretical characteristics are matched at predetermined points thereof and then the assumed oxide thickness is iterated until both characteristics superimpose in the silicon accumulation region. The iterated oxide thickness that allows both characteristics to superimpose is the oxide thickness value being sought. The finally evolved experimental characteristic also is used to determine the interface states density of the oxide. Specially designed corona discharge guns are described for use with the oxide thickness and interface states density measurement techniques.

Claims

1. In a method for measuring the thickness of an insulating layer on a semiconductor substrate, the steps comprising:

repetitively depositing a fixed charge density on the surface of said layer,

measuring the resultant changes in the surface potential of said layer relative to the bulk of said substrate,

establishing a theoretical bandbending versus bias characteristic for said layer and substrate, undergoing said repetitive deposition of charge density, for an assumed value of said thickness,

determining an experimental bandbending versus bias characteristic using said measured change in the insulating layer surface potential for each said deposited charge, and said assumed value of thickness,

comparing said theoretical and said experimental characteristics to ascertain any difference in the accumulation region of said characteristics, and

iteratively incrementing said assumed value while using said measured changes in said surface potential to determine corresponding experimental bandbending versus bias characteristics and

comparing each said corresponding characteristic with said theoretical characteristic until one of said corresponding characteristics matches said theoretical characteristic in the substrate accumulation region of said characteristics.

2. The method defined in claim 1 wherein each said experimental characteristic is indexed relative to said theoretical characteristic prior to comparing the same.

3. The method defined in claim 2 wherein each said experimental characteristic is indexed relative to said theoretical characteristic at the respective flatband voltage points.

4. The method defined in claim 1 and further using the incremented value of said assumed insulating layer thickness which produced said match between said one of said corresponding characteristics and said theoretical characteristic as the value of said measured thickness.

5. The method defined in claim 1 wherein said insulating layer is silicon oxide.

6. The method defined in claim 1 and further including determining the slope of said one of said experimental bandbending versus bias characteristics at the flatband voltage point thereof,

determining the slope of said theoretical bandbending versus bias characteristic at the flatband voltage point thereof, and

comparing said slopes as a measure of interface states density.

7. The method defined in claim 6 and further including

making photovoltage measurements along with each measurement of said resultant change in the surface potential of said layer.

8. The method defined in claim 1 wherein each said repetitive fixed charge density is deposited using a corona discharge gun.

9. The method defined in claim 1 wherein said resultant changes in the surface potential of said layer are measured using a vibrating Kelvin probe.