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Method and apparatus for reduced fatigue in ferroelectric memory elements

  • US 5,487,032 A
  • Filed: 11/10/1994
  • Issued: 01/23/1996
  • Est. Priority Date: 11/10/1994
  • Status: Expired due to Fees
First Claim
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1. In a non-volatile memory device having at least one ferroelectric memory element within at least one memory cell, wherein a polarization state of said ferroelectric memory element is associated with a stored logic "1" and another polarization state of said ferroelectric memory element is associated with a stored logic "0", a method for reducing polarizability fatigue of said ferroelectric memory element comprising the steps of:

  • receiving a request to coerce the state of polarization of said ferroelectric memory element to a desired state of polarization;

    generating, responsive to said request, a waveform electric field signal having a directional polarity and having a maximum amplitude sufficient to alter said state of polarization of said ferroelectric memory element, said signal having a predetermined rise time, during which the amplitude of said signal changes from a first level to said maximum amplitude, wherein said predetermined rise time is selected from the group comprising, about one half the plate rise time of said ferroelectric memory element, and about one half the sense delay time of said ferroelectric memory element; and

    applying, responsive to said request, said signal to said ferroelectric memory element such that the state of polarization of said ferroelectric memory element is coerced to said desired state of polarization.

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